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人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 798-804.

• 光电子薄膜 • 上一篇    下一篇

反应磁控溅射制备h-BN薄膜及其日盲紫外探测器

武成1,2, 朱昭捷1, 李坚富1, 涂朝阳1, 吕佩文1, 王燕1   

  1. 1.中国科学院福建物质结构研究所,福州 350002;
    2.中国科学院大学,北京 100039
  • 收稿日期:2023-03-28 出版日期:2023-05-15 发布日期:2023-06-05
  • 通信作者: 王 燕,博士,研究员。E-mail:wy@fjirsm.ac.cn
  • 作者简介:武 成(1998—),男,山东省人,硕士研究生。E-mail:wucheng@fjirsm.ac.cn
  • 基金资助:
    国家自然科学基金(51832007,51872286,U21A20508);科技部国家重点研发计划(2022YFB3605704);福建省科技计划引导性项目(2022H0043,2020H0036)

Fabrication of h-BN Films by Reactive Sputtering Method for Solar-Blind Ultraviolet Detectors

WU Cheng1,2, ZHU Zhaojie1, LI Jianfu1, TU Chaoyang1, LYU Peiwen1, WANG Yan1   

  1. 1. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;
    2. University of Chinese Academy of Sciences, Beijing 100039, China
  • Received:2023-03-28 Online:2023-05-15 Published:2023-06-05

摘要: 随着电子信息技术的飞速发展,具有更高抗干扰能力以及更高灵敏度的日盲紫外探测器引起了广泛关注。六方相氮化硼(h-BN)凭借其超宽带隙、高光吸收系数、高热导率及高击穿场强等优势成为日盲紫外探测器研究的热点材料。此外,h-BN良好的机械强度和光学透明性使其兼具柔性探测器的潜力。然而室温条件下制备的h-BN薄膜常具有较多缺陷,极大程度上限制了其柔性探测器的发展。本文在室温条件下采用反应磁控溅射,以B为生长源,在蓝宝石和Si衬底上实现了较高质量h-BN薄膜的制备,并在此薄膜的基础上制备了高性能日盲紫外探测器。3 V电压下,其探测器拥有极低的暗电流(0.07 pA)、较高的响应度(1.37 μA/W)和探测率(2.73×1010 Jones)。本文的研究结果证实了室温制备h-BN薄膜及其日盲紫外探测器的可行性,为实现可在室温下工作的h-BN探测器的应用提供了参考。

关键词: h-BN薄膜, 反应溅射法, 室温, 日盲紫外探测器, 光电性能, 响应度

Abstract: Nowadays, with the rapid development of electronic information technology, solar-blind ultraviolet (UV) detectors having large anti-interference ability and higher sensitivity are attracting much attention. Possessing ultra-wide band gap, high optical absorption coefficient, good thermal conductivity, and high breakdown field strength, hexagonal boron nitride (h-BN) has become a promising material for solar-blind UV detectors. Additionally, high mechanical strength and optical transparency of h-BN make it a potential candidate for flexible detector. However, the h-BN films prepared at low temperatures often contain many defects, which greatly limit their performance as a detector. In this work, high-quality h-BN films were prepared on sapphire and Si substrates using B as growth source at room temperature by reactive magnetron sputtering method, and then a high-performance solar-blind UV detector was fabricated based on h-BN films. The prepared h-BN solar-blind UV detector has extremely low dark current (0.07 pA), high responsivity (1.37 μA/W) and detectivity (2.73×1010 Jones) at 3 V. These results indicate that preparation of high-quality h-BN film and its solar-blind UV detector at room temperature are feasible. The study also provides a reference for the application of h-BN detector working at room temperature.

Key words: h-BN film, reactive sputtering method, room temperature, solar-blind ultraviolet detector, photoelectric property, responsivity

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