大尺寸GaN微波材料范德瓦耳斯外延机理及应力调控研究

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (2): 252-257.

大尺寸GaN微波材料范德瓦耳斯外延机理及应力调控研究

李传皓^1,2, 李忠辉^1,2, 彭大青^1,2, 张东国^1,2, 杨乾坤^1,2, 罗伟科^1,2

1.南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京 210016;
2.中国电科碳基电子重点实验室,南京 210016

收稿日期:2023-06-13 出版日期:2024-02-15 发布日期:2024-02-04
作者简介:李传皓(1986—),男,山东省人,高级工程师。E-mail:15951950135@126.com

Study on vdW Epitaxy Mechanism and Stress Modulation of Large-Size GaN Microwave Material

LI Chuanhao^1,2, LI Zhonghui^1,2, PENG Daqing^1,2, ZHANG Dongguo^1,2, YANG Qiankun^1,2, LUO Weike^1,2

1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;
2. CETC Key Laboratory of Carbon-based Electronics, Nanjing 210016, China

Received:2023-06-13 Online:2024-02-15 Published:2024-02-04

摘要/Abstract

摘要： 本文基于金属有机化学气相沉积(MOCVD)技术,以少层氮化硼(BN)作为插入层在4英寸蓝宝石衬底上开展范德瓦耳斯异质外延GaN微波材料的生长机理及应力调控方面的研究,探讨了AlN成核工艺对GaN缓冲层生长机制的影响,以及与材料晶体质量、应力及电学性能等之间的关联。提出了一种基于AlN/AlGaN复合成核技术的应力调控方案,首次实现了大尺寸范德瓦耳斯(vdW)异质外延材料应力的有效管控,研制的GaN微波材料的弯曲度(Bow)为+20.4 μm,(002)/(102)面半峰全宽为471.6/933.5 arcsec,表面均方根粗糙度为0.52 nm,电子迁移率达到2 000 cm²/(V·s)。最后,基于机械剥离实现了大尺寸晶圆级GaN微波材料与蓝宝石衬底的分离,为高导热衬底转移提供便利,为大功率射频器件的制作创造条件。

关键词: 范德瓦耳斯异质外延, 金属有机化学气相沉积, GaN微波材料, 少层BN, 应力调控

Abstract: Based on metal organic chemical vapor deposition (MOCVD), growth mechanism and stress modulation of van der Waals (vdW) heteroepitaxial GaN microwave material were studied with few-layer BN as an interlayer on 4-inch sapphire substrates. The influence of AlN nucleate process on growth mechanism of GaN buffer layer and its correlation with crystalline quality, stress, and electrical properties were discussed. A stress modulation scheme based on AlN/AlGaN composite nucleation process is proposed, achieving stress well in control for large-size vdW heteroepitaxy firstly. The as-grown GaN microwave material possesses a wafer bow of +20.4 μm, fullwidth at half maximum of GaN (002)/(102) peaks of 471.6/933.5 arcsec, root-mean-square roughness of 0.52 nm and electron mobility of 2 000 cm²/(V·s). Finally, large-size wafe-scale GaN microwave material was successfully separated from sapphire substrate by a mechanical lift-off process, providing convenience for transfering to high thermal conductivity substrates and creating conditions for fabricating high-power RF devices.

Key words: vdW heteroepitaxy, MOCVD, GaN microwave material, few-layer BN, stress modulation

中图分类号:

TN304.2

李传皓, 李忠辉, 彭大青, 张东国, 杨乾坤, 罗伟科. 大尺寸GaN微波材料范德瓦耳斯外延机理及应力调控研究[J]. 人工晶体学报, 2024, 53(2): 252-257.

LI Chuanhao, LI Zhonghui, PENG Daqing, ZHANG Dongguo, YANG Qiankun, LUO Weike. Study on vdW Epitaxy Mechanism and Stress Modulation of Large-Size GaN Microwave Material[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 252-257.

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