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人工晶体学报 ›› 2024, Vol. 53 ›› Issue (8): 1394-1408.

• 研究论文 • 上一篇    下一篇

以Spiro-OMeTAD作为空穴传输层的ZnS/SnS太阳能电池模拟研究

唐华著, 肖清泉, 付莎莎, 谢泉   

  1. 贵州大学大数据与信息工程学院,新型光电子材料与技术研究所,贵阳 550025
  • 收稿日期:2024-03-12 出版日期:2024-08-15 发布日期:2024-08-14
  • 通信作者: 肖清泉,博士,教授。E-mail:qqxiao@gzu.edu.cn
  • 作者简介:唐华著(1997—),男,贵州省人,硕士研究生。E-mail:thzaikn@qq.com
  • 基金资助:
    贵州大学智能制造产教融合创新平台及研究生联合培养基地(2020-520000-83-01-324061);贵州省智慧化服务工程研究中心(2203-520102-04-04-298868);贵阳市科技平台建设项目(筑科合同〔2023〕7-3)

Simulation on ZnS/SnS Solar Cells with Spiro-OMeTAD as Hole Transport Layer

TANG Huazhu, XIAO Qingquan, FU Shasha, XIE Quan   

  1. Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
  • Received:2024-03-12 Online:2024-08-15 Published:2024-08-14

摘要: 硫化亚锡(SnS)因其合适的电学和光学特性而被作为太阳能电池的吸收层进行研究。Spiro-OMeTAD常用作空穴传输层以提高太阳能电池性能。本文采用wxAMPS软件对SnS基太阳能电池ZnS/SnS/Spiro-OMeTAD进行模拟研究。主要研究分析Spiro-OMeTAD空穴传输层对太阳能电池性能的影响,其中包括:开路电压、短路电流密度、填充因子、光电转换效率及量子效率。研究结果表明:在加入Spiro-OMeTAD空穴传输层后,ZnS/SnS/Spiro-OMeTAD太阳能电池的开路电压(VOC)增加至0.958 V,短路电流(JSC)增加到32.96 mA/cm2,填充因子(FF)和光电转换效率(PCE)分别达到了79.26%和25.07%,电池性能取决于电池各层厚度、掺杂浓度、缺陷态密度及工作温度。通过研究表明Spiro-OMeTAD作为空穴传输层,有利于提高太阳能电池的各性能,并且ZnS/SnS/Spiro-OMeTAD是一种十分具有发展潜力的光伏器件结构。

关键词: 硫化亚锡, 硫化锌, Spiro-OMeTAD, 空穴传输层, 异质结太阳能电池, wxAMPS, 缺陷

Abstract: Stannous sulfide (SnS) was investigated as an absorbing layer for solar cells due to its suitable electrical and optical properties. Spiro-OMeTAD is commonly employed as a hole transport layer to enhance the performance of solar cells. The ZnS/SnS/Spiro-OMeTAD solar cell was designed and simulated by the wxAMPS software. The effects of the Spiro-OMeTAD hole transport layer on the properties of solar cells were mainly studied, namely the effects on open-circuit voltage, short-circuit current density, filling factor, photoelectric conversion efficiency and quantum efficiency. The results show that the open-circuit voltage of the ZnS/SnS/Spiro-OMeTAD solar cells increase to 0.958 V and short-circuit current increase to 32.96 mA/cm2 when the Spiro-OMeTAD HTL is added. The fill factor and photoelectric conversion efficiency are 79.26% and 25.07%, respectively. The performance of the solar cells depends on the thickness of each layer, doping concentration, Gaussian defect state density, and temperature. The results demonstrate that the Spiro-OMeTAD, as a hole transport layer, is beneficial for enhancing various performance aspects of solar cells. Moreover, the ZnS/SnS/Spiro-OMeTAD exhibits a great potential as a photovoltaic device structure.

Key words: stannous sulfide, zinc sulphur, Spiro-OMeTAD, hole transport layer, heterojunction solar cell, wxAMPS, defect

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