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人工晶体学报 ›› 2024, Vol. 53 ›› Issue (9): 1494-1503.

• 综合评述 • 上一篇    下一篇

分子束外延设备国内外进展及展望

陈峰武, 吕文利, 龚欣, 薛勇, 巩小亮   

  1. 中国电子科技集团公司第四十八研究所,长沙 410111
  • 收稿日期:2024-03-19 出版日期:2024-09-15 发布日期:2024-09-19
  • 作者简介:陈峰武(1984—),男,湖南省人,博士,高级工程师。E-mail:chenfw@cs48.com
  • 基金资助:
    国家重点研发计划(2022YFB3404400)

Progress and Prospect of Molecular Beam Epitaxy Equipment at Home and Abroad

CHEN Fengwu, LYU Wenli, GONG Xin, XUE Yong, GONG Xiaoliang   

  1. The 48th Reseach Institute of China Electronics Technology Group Corporation, Changsha 410111, China
  • Received:2024-03-19 Online:2024-09-15 Published:2024-09-19

摘要: 分子束外延(MBE)设备具有超高真空、超高精度、超高均匀性薄膜沉积等特点,是化合物半导体材料、器件制造的核心工艺装备,被广泛用于固态微波射频器件、半导体激光器、探测器等外延薄膜制备。本文在简要介绍MBE设备及技术特点的基础上,首先详细阐述了Riber、Veeco、DCA等国际知名厂商的MBE设备发展历程及产品现状;接着对中国电科48所(CETC48)、沈阳科仪(SKY)、费勉仪器(FERMI)等国内代表性厂商的MBE设备国产化进展情况进行介绍;最后对MBE技术的未来发展趋势进行了展望,并指出当前MBE设备国产替代恰逢其时,需要抓住机遇,克服挑战,快速推进我国MBE设备的技术迭代和产业化应用,为我国科技自立自强提供重要支撑。

关键词: 分子束外延设备, 化合物半导体, 国产化, 超高真空

Abstract: Molecular beam epitaxy (MBE) is an ultra-high vacuum, ultra-high precision and uniformity thin film deposition process by which to fabricate epitaxial films of solid-state microwave RF devices, semiconductor lasers and detectors, etc, and plays a fundamental role in developing compound semiconductor materials for electronics and optics. The article briefly introduces technical characteristics of the MBE equipment. Then historical development and current status of world-renowned MBE manufacturers such as Riber, Veeco, and DCA, and localization progress of MBE equipment from domestic manufacturers such as CETC48, SKY and FERMI are elaborated. Finally, future trends of MBE are expected, pointing out that it is certainly timely for substitution. To seize the opportunities and overcome the challenges, we need to promote technological innovation and industrial application of MBE equipment quickly and to provide important supports for China's scientific and technological self-reliance and self-improvement.

Key words: molecular beam epitaxy equipment, compound semiconductor, localization, ultra-high vacuum

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