植物补光用In3+掺杂Zn3Ga2Ge2O10∶Cr3+远红光发光材料的性能研究

摘要/Abstract

摘要： 采用高温固相法制备了Cr³⁺掺杂的远红光荧光粉,并通过引入In³⁺对Zn₃Ga₂Ge₂O₁₀∶Cr³⁺发光特性进行了调控。通过XRD对Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺(摩尔分数)的晶体结构进行了分析。利用室温荧光光谱和热释光光谱分析了Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺的发光特性,其发射光谱由⁴T₂(⁴F)→⁴A₂和²E→⁴A₂跃迁的705、721 nm两发光峰叠加而成。随着Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺中In³⁺掺杂浓度增加,材料发射光谱呈现展宽的现象,这是Cr³⁺所处晶体场环境的改变导致了晶体场劈裂程度的变化。光谱展宽后荧光材料的发光特性与植物中光敏色素吸收谱更加匹配,因此其有望应用于植物照明领域。此外,随着In³⁺掺杂浓度增加,荧光材料表现出红色长余辉现象,并且余辉时间与In³⁺掺杂浓度有关。

关键词: 荧光粉, Zn₃Ga₂Ge₂O₁₀∶Cr³⁺, In³⁺掺杂, 远红光, 阳离子替代, 植物补光

Abstract: Cr³⁺ doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ far-red phosphor was synthesized by the high temperature solid state method, and the luminescent properties of Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ was tuned by introducing In³⁺. The crystal structure of Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ was determined by X-ray diffraction(XRD), and the luminescent properties were analysed using room-temperature photoluminescence spectra and thermoluminescence spectra. Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ exhibits a broad emission band, which is composed of two luminescent peaks at 705 and 721 nm from the transitions of ⁴T₂(⁴F)→⁴A₂ and ²E→⁴A₂ respectively. As the In³⁺ doping concentration increases, the emission spectrum of Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ broadens. This broadening is attributed to the changes in the crystal field environment around the Cr³⁺, which leads to an increase in the full width at half maximum (FWHM) of the material's emission spectrum as the crystal field splitting becomes more pronounced. Therefore, Zn₃(Ga_1-xIn_x)₂Ge₂O₁₀∶2%Cr³⁺ phosphors are expected to be applied in the field of plant lighting for their luminescence characteristics matching with the absorption spectrum of phytochrome in plants. Additionally, as the In³⁺ doping concentration increases, the phosphor material exhibits a red long afterlow phenomenon, and its afterglow duration is related to the In³⁺ doping concentration.

Key words: phosphor, Zn₃Ga₂Ge₂O₁₀∶Cr³⁺, In³⁺ doping, far-red light, cation substitution, plant light supplement

中图分类号:

白琼宇, 王春浩. 植物补光用In³⁺掺杂Zn₃Ga₂Ge₂O₁₀∶Cr³⁺远红光发光材料的性能研究[J]. 人工晶体学报, 2024, 53(9): 1568-1575.

BAI Qiongyu, WANG Chunhao. Performance of In³⁺ Doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ Far-Red Light Emitting Materials for Plant Light Supplement[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1568-1575.

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植物补光用In³⁺掺杂Zn₃Ga₂Ge₂O₁₀∶Cr³⁺远红光发光材料的性能研究

Performance of In³⁺ Doped Zn₃Ga₂Ge₂O₁₀∶Cr³⁺ Far-Red Light Emitting Materials for Plant Light Supplement

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