热屏结构对直径400 mm直拉单晶硅生长的影响

doi:10.16553/j.cnki.issn1000-985x.2025.0133

摘要/Abstract

摘要： 单晶硅是制备半导体的关键材料之一，在降低成本的驱使下，大直径化和快速拉晶技术是直拉法制备单晶硅的发展趋势之一。本文提出了一种双热屏结构，分析了双热屏结构对单晶硅生长过程中的温度场和气体流场、固液界面、单晶硅生长速度、热应力的影响。结果表明，双热屏结构可以对固液界面附近氩气进行导流，消除热屏外侧的氩气涡流，增加晶体的散热，从而提高晶体的生长速率，最大生长速率提高了19.2%；同时，双热屏结构还可以改善固液界面波动，相较于单热屏结构，最大热应力降低了4.266 MPa。因此，双热屏结构具有较好的应用前景。

关键词: 直拉单晶硅; 热屏结构; 生长速度; 固液界面; 热应力; 点缺陷

Abstract: Monocrystalline silicon is one of the key materials for the preparation of semiconductors. Driven by the need to reduce costs， large diameter and fast crystal pulling technology is one of the development trends in the preparation of monocrystalline silicon by Czochralski method. In this paper， a double thermal shield structure was proposed， and the effects of the double thermal shield structure on the temperature and gas flow fields， the melt-crystal interface， the growth rate of monocrystalline silicon， thermal stresses， and point defects during the growth of monocrystalline silicon were analyzed. The results demonstrate that the double thermal shield structure can guide the flow of argon gas near the solid-liquid interface， suppress vortex formation on the outer side of the thermal shield， enhance heat dissipation from the crystal， and consequently increase its growth rate， with a maximum improvement of 19.2%. At the same time， the double thermal shield structure also improves the melt-crystal interface fluctuation， and the maximum thermal stress is reduced by 4.266 MPa compared with the single thermal shield structure. Therefore， the double thermal shield structure has a better application prospect.

Key words: Czochralski monocrystalline silicon; thermal shield structure; growth rate; melt-crystal interface; thermal stress; point defect

中图分类号:

O782

艾进才, 杨平平, 赵紫薇, 高忙忙. 热屏结构对直径400 mm直拉单晶硅生长的影响[J]. 人工晶体学报, 2026, 55(1): 68-76.

AI Jincai, YANG Pingping, ZHAO Ziwei, GAO Mangmang. Effect of Thermal Shield Structure on the Growth of 400 mm Diameter Czochralski Monocrystalline Silicon[J]. Journal of Synthetic Crystals, 2026, 55(1): 68-76.

图/表 13

图1 直拉炉热屏结构示意图

Fig.1 Schematic diagram of Czochralski furnace structure

图2 网格划分图

Fig.2 Grid division diagram

表1 材料物性参数

Table 1 Physical parameters of materials

Material	Emissivity	λ_eff/（W·m^-1·K^-1）	Density/（kg·m^-3）	C_p /（J·kg^-1·K^-1）	Elastic modulus/Pa
Si crystal	0.9-0.000 26T	98.9-0.09T+2.86×10^-5T²	2 330	1 000	1.653×10¹¹
Si melt	0.3	66.5	2 332+0.48T-1.98×10^-4T²	915	—
Graphite	0.8	146.9-0.177T+1.27×10^-4T²-4.69×10^-8T³	1 750	2 100	—
Felt	0.9	0.086-7.55×10^-5T+1.3×10^-7T²	—	—	—
Quartz	0.85	4	—	—	—
Steel	0.45	15	—	—	—
Argon	—	0.01+2.5×10^-5T	—	527	—

图3 氩气气体流场分布

Fig.3 Distribution of argon gas field

图4 Cz炉内热场分布

Fig.4 Thermal field distribution inside Cz furnace

图5 熔体内温度分布

Fig.5 Temperature distribution in melt

图6 加热器与坩埚壁温度分布

Fig.6 Temperature distribution of heater and crucible wall

图7 热流密度

Fig.7 Heat flux

图8 加热器功率

Fig.8 Heater power

图9 熔体-晶体界面附近轴向温度分布

Fig.9 Axial temperature distribution near the melt-crystal interface

图10 不同热屏结构所对应的固液界面形状

Fig.10 Melt-crystal interface shapes corresponding to different thermal shield structures

图11 晶体内温度分布

Fig.11 Temperature distribution inside crystal

图12 不同热屏结构下热应力分布

Fig.12 Von Mises stress distribution under different thermal shield structures

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