欢迎访问《人工晶体学报》官方网站,今天是 2025年8月13日 星期三 分享到:

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (6): 949-959.DOI: 10.16553/j.cnki.issn1000-985x.2024.0320

• 研究论文 • 上一篇    下一篇

热屏影响下直拉法单晶硅生长能耗及传热路径研究

祁超(), 李登辇, 李早阳(), 杨垚, 钟泽琪, 刘立军()   

  1. 西安交通大学能源与动力工程学院,西安 710049
  • 收稿日期:2024-12-20 出版日期:2025-06-20 发布日期:2025-06-23
  • 通信作者: 李早阳,博士,副教授。E-mail:lizaoyang@mail.xjtu.edu.cn; 刘立军,博士,教授。E-mail:ljliu@mail.xjtu.edu.cn
  • 作者简介:祁超(1993—),男,甘肃省人,博士研究生。E-mail:chao.qi@stu.xjtu.edu.cn
  • 基金资助:
    国家重点研发计划课题(2023YFB4204601);内蒙古自治区科技创新重大示范工程“揭榜挂帅”项目(2023JBGS0017);内蒙古自治区科技创新重大示范工程“揭榜挂帅”项目(2024JBGS0004);宜宾市“揭榜挂帅”科技项目(2023JB005)

Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth under the Influence of Heat Shield

QI Chao(), LI Dengnian, LI Zaoyang(), YANG Yao, ZHONG Zeqi, LIU Lijun()   

  1. School of Energy and Power Engineering,Xi’an Jiaotong University,Xi’an 710049,China
  • Received:2024-12-20 Online:2025-06-20 Published:2025-06-23

摘要: 单晶硅是太阳能电池的主要原材料,其生长成本直接影响电池的制造成本。因此,降低单晶硅生长能耗对光伏产业的降本增效至关重要。本文建立了直拉单晶硅生长的全局3D数值模型,考虑了单晶炉中加热器、电极等非旋转对称结构,能够更精确地模拟单晶炉内的流动和传热过程。基于所建立的数值模型,研究了热屏冷、热侧发射率对单晶炉内能耗分配及辐射、对流和导热传热路径的影响规律。结果表明,冷、热侧发射率的降低均可取得明显的降耗效果,且降低冷侧发射率能够更加显著地降低能耗。在辐射传热方面,随着热屏冷、热侧发射率的降低,石墨坩埚和热屏热侧的吸热,以及硅熔体和热屏冷侧的放热均不断减小;随着热侧发射率的降低,顶保温的吸热出现了一定的增加。在对流传热方面,随着热屏冷侧发射率的降低,水冷屏吸热及热屏冷侧放热均不断增大,与冷侧相比,热侧发射率对对流传热的影响则相对较小。在导热传热方面,随着热屏冷热侧发射率的降低,热屏热侧到冷侧、石墨坩埚到石英坩埚,以及石英坩埚到硅熔体的导热均不断减小。本文研究结果可以为工业直拉单晶炉的精细化、深度化降耗提供重要的参考。

关键词: 热屏; 能耗; 传热路径; 直拉单晶硅; 数值模拟

Abstract: Silicon crystal, as the primary raw material for solar cells, plays a critical role in determining solar cells manufacturing costs. Consequently, reducing power consumption during monocrystalline silicon growth is pivotal for cost reduction and efficiency improvement in the photovoltaic industry. This study develops a global three-dimensional (3D) numerical model for the Czochralski (CZ) silicon growth, considering non-axisymmetric components such as heaters and electrodes in the CZ furnace. This modeling approach allows for more precise simulations of fluid flow and heat transfer in the CZ furnace. Based on the numerical model, the influence law of the emissivity of cold and hot side in heat shield on power consumption distribution and heat transfer paths of radiation, convection, and conduction in the CZ furnace was analyzed. The results indicate that reducing the emissivity on both cold and hot side significantly decreases power consumption, with a more pronounced effect observed on the cold side. In terms of radiative heat transfer, reducing the heat shield emissivity decreases the heat absorbed by the graphite crucible and the hot side of heat shield, as well as the heat releasing from the silicon melt and the cold side of heat shield. Furthermore, a slight increase in heat absorption by the top insulation is observed when the emissivity of the hot side is reduced. In terms of convective heat transfer, the reduction in cold side emissivity increases the heat absorbed by the water-cooling jacket, and the heat releasing from the cold side of heat shield. In contrast, the impact of hot side emissivity on convective heat transfer is comparatively minor. In terms of conductive heat transfer, lowering the emissivity on both sides of heat shield decreases heat conduction from the hot to cold side of heat shield, as well as from the graphite crucible to the quartz crucible, and from the quartz crucible to the silicon melt. These results provide critical theoretical insights for the precise and deep optimization of energy-saving strategies in industrial CZ furnaces.

Key words: heat shield; power consumption; heat transfer path; Czochralski silicon crystal; numerical simulation

中图分类号: