锡溶液中半导体单晶CuSi2P3的生长与结构分析

人工晶体学报 ›› 1998, Vol. 27 ›› Issue (2): 191-.

• • 上一篇

锡溶液中半导体单晶CuSi2P3的生长与结构分析

Department of Physics,College of Science, University of Salahaddin,ABBLL,IRAQ

出版日期:1998-02-15 发布日期:2021-01-20
基金资助:
College of Electronic Ergineering

Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor

M.S.OMAR

Online:1998-02-15 Published:2021-01-20

摘要/Abstract

Abstract: Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.

Key words: Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.

中图分类号:

. 锡溶液中半导体单晶CuSi2P3的生长与结构分析[J]. 人工晶体学报, 1998, 27(2): 191-.

M.S.OMAR. Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor[J]. JOURNAL OF SYNTHETIC CRYSTALS, 1998, 27(2): 191-.

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锡溶液中半导体单晶CuSi2P3的生长与结构分析

Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor

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