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人工晶体学报 ›› 2020, Vol. 49 ›› Issue (12): 2287-2291.

• 研究论文 • 上一篇    下一篇

单层n型MoS2/p型c-Si异质结太阳电池数值模拟

陈云, 蔡厚道   

  1. 江西科技学院智能工程学院,南昌 330098
  • 出版日期:2020-12-15 发布日期:2021-01-25
  • 作者简介:陈 云(1975—),女,江西省人,高级工程师。E-mail:cyjxut1975@163.com
  • 基金资助:
    江西省教育厅科学技术研究项目(GJJ180974)

Numerical Simulation of Monolayer n-Type MoS2/p-Type c-Si Heterojunction Solar Cells

CHEN Yun, CAI Houdao   

  1. School of Intelligent Engineering, Jiangxi University of Technology, Nanchang 330098, China
  • Online:2020-12-15 Published:2021-01-25

摘要: 单层二硫化钼(MoS2)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS2/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS2的电子亲和能为3.75 eV、掺杂浓度为1018 cm-3,p型c-Si的掺杂浓度为1017 cm-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS2/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过1011 cm-2·eV-1时会严重影响太阳电池的光伏性能。

关键词: 二硫化钼, c-Si, 异质结太阳电池, 转换效率, 二维材料, 数值模拟

Abstract: Monolayer MoS2 is a promising semiconductor material for solar energy conversion application because of its excellent optoelectronic properties. In this study, monolayer n-type MoS2/p-type c-Si heterojunction solar cell was proposed and simulated using AMPS software. The different factors influenced the photovoltaic performance of the solar cell were studied. The simulation results show that the solar cell can achieve the highest conversion efficiency of 22.1% with the electron affinity of n-type MoS2 is 3.75 eV, the doping concentration of n-type MoS2 is 1018 cm-3, and the doping concentration of p-type c-Si is 1017 cm-3. Finally, the influence of interface states at the n-type MoS2/p-type c-Si heterointerface on the overall performance of solar cell is simulated. It is found that the interface state density over 1011 cm-2·eV-1 will seriously affect the photovoltaic performance of solar cell.

Key words: MoS2, c-Si, heterojunction solar cell, conversion efficiency, two-dimensional material, numerical simulation

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