双向低触发电压横向晶闸管放电管研究

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (2): 353-360.

双向低触发电压横向晶闸管放电管研究

蒋刚¹, 邓旭聪¹, 赵明²

1.国网广安供电公司,广安 638000;
2.四川大学电子信息学院,成都 610065

收稿日期:2020-11-17 发布日期:2021-03-24
作者简介:蒋刚(1970—),男,四川省人,高级工程师。E-mail:gangjiang_scgw@163.com
基金资助:
国网广安供电公司资助项目(521916160001)

Research on Transverse Silicon Controlled Rectifier Discharge Transistor with Bidirectional Low Trigger Voltage

JIANG Gang¹, DENG Xucong¹, ZHAO Ming²

1.State Grid Guangan Power Supply Company, Guang’an 638000, China;
2.School of Electronic Information, Sichuan University, Chengdu 610065, China

Received:2020-11-17 Published:2021-03-24

摘要/Abstract

摘要： 依据触发电压V_S、触发电流I_S、维持电流I_H及触发电压、维持电流高低温变化率指标要求,利用Silvaco-TCAD半导体器件仿真软件完成了双向低触发电压横向晶闸管(SCR)放电管的设计。详细分析了对触发特性产生显著影响的结构参数(N^-衬底区、寄生PNP晶体管P^-集电区、寄生NPN晶体管P^-基区、N⁺阴极区、N⁺触发区、寄生PNP晶体管P^-集电区与寄生NPN晶体管P^-基区间距、寄生NPN晶体管表面基区宽度)对器件输出I-V特性及抗瞬态电流烧毁能力的影响。根据设计得到的器件结构参数,绘制版图、制定双向低触发电压横向SCR放电管工艺方案并进行试制。通过实际流片,对关键的设计及工艺进行攻关,研制出样片触发电压V_S、触发电流I_S、维持电流I_H及触发电压、维持电流高低温变化率完全满足电参数指标要求。

关键词: 双向, 低触发电压, 横向晶闸管, 放电管, 触发特性, 电参数

Abstract: According to the requirements of the electrical parameters of trigger voltage V_S, switching current I_S, hold current I_H and V_S, I_H high and low temperature rate of change, the Silvaco-TCAD semiconductor device simulation software was used to complete the design of the transverse silicon controlled rectifier (SCR) discharge transistor with bidirectional low trigger voltage. The N^- substrate, parasitic PNP transistor P^- collector region, parasitic NPN transistor P^- base region, N⁺ cathode region, N⁺ trigger region, parasitic PNP transistor P^- collector region and parasitic NPN transistor P^- base region spacing, parasitic NPN transistor base surface width are important structural parameters of the transverse SCR discharge transistor with bidirectional low trigger voltage, which have a significant impact on the triggering characteristics of the device. The effects of the above structural parameters on the output I-V characteristics and the resistance to transient current burn down of the device were analyzed in detail.According to the structure parameters of the device, the layout is drawn, and the process scheme of transverse SCR discharge transistor with bidirectional low trigger voltage was developed and trial-produced.Through the actual flow sheet, the key technology was solved, the V_S, I_S, I_H, and V_S, I_H high and low temperature change rate of the developed sample sheet can fully meet the requirements of the electrical parameters.

Key words: bidirectional, low trigger voltage, transverse SCR, discharge transistor, triggering characteristic, electrical parameter

中图分类号:

TN32

蒋刚, 邓旭聪, 赵明. 双向低触发电压横向晶闸管放电管研究[J]. 人工晶体学报, 2021, 50(2): 353-360.

JIANG Gang, DENG Xucong, ZHAO Ming. Research on Transverse Silicon Controlled Rectifier Discharge Transistor with Bidirectional Low Trigger Voltage[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(2): 353-360.

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