直拉法单晶炉随动式加热器设计

摘要/Abstract

摘要： 单晶炉是一种在以高纯氩气为主的惰性气体环境中,用石墨热场加热,将多晶硅材料加以熔化,用直拉法生长单晶硅的设备,在太阳能单晶硅拉制的过程中,如何提高拉晶的速度和质量以及降低设备的能耗一直是单晶硅厂家永恒的追求。本文从机械结构的角度分析了坩埚上升在单晶炉拉晶过程中所造成的拉晶速度下降和额外能耗问题,在此问题的基础上提出了一种加热器随坩埚在拉晶过程中上升的单晶炉结构优化方法,并通过有限元仿真对单晶炉优化前后晶体和熔体的热场以及拉晶过程中加热器功率进行分析。结果表明,改进后的单晶炉不仅可以提高拉晶过程的稳定性和拉晶速度,从而进一步提高单晶炉的拉晶质量和产量,而且还能有效降低单晶炉拉晶的能耗。

关键词: 单晶炉, 加热器优化, 高效热场, 单晶硅生长, 热场模拟

Abstract: Single crystal furnace is a kind of equipment which uses graphite thermal field to melt polysilicon materials in the inert gas environment dominated by high-purity argon, and grows single crystal silicon by Czochralski method. In the process of solar single crystal silicon drawing, how to improve the speed and quality of drawing crystals and reduce the energy consumption of equipment has always been the eternal pursuit of single crystal silicon manufacturers. From the perspective of mechanical structure, this paper analyzes the decrease of crystal drawing speed and extra energy consumption caused by rising crucible in single crystal furnace. On the basis of this problem, a method for optimizing the structure of single crystal furnace with crucible rising in the process of crystal drawing was proposed, and through the finite element simulation, the thermal field of the crystal and the melt before and after the optimization of the single crystal furnace and the heater power during the crystal drawing process were analyzed. The simulation analysis shows that the optimizing single crystal furnace can not only improve the stability and speed of crystal drawing process, so as to further improve the quality and output of single crystal furnace, but can also effectively reduce the energy consumption of single crystal furnace.

Key words: single crystal furnace, heater optimization, high-efficiency thermal field, single crystal silicon growth, thermal field simulation

中图分类号:

张西亚, 高德东, 王珊, 郭冰, 宋生宏. 直拉法单晶炉随动式加热器设计[J]. 人工晶体学报, 2021, 50(2): 361-367.

ZHANG Xiya, GAO Dedong, WANG Shan, GUO Bing, SONG Shenghong. Design of Follow-Up Heater for Czochralski Single Crystal Furnace[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(2): 361-367.

参考文献

[1] 刘丁.直拉硅单晶生长过程建模与控制[M].北京:科学出版社,2015.
LIU D. Modeling and control of Czochralski silicon growth process. Beijing: Science Press, 2015(in Chinese).
[2] 刘丁,赵小国,赵跃.直拉硅单晶生长过程建模与控制研究综述[J].控制理论与应用,2017,34(1):1-12.
LIU D, ZHAO X G, ZHAO Y. A review of growth process modeling and control of Czochralski silicon single crystal[J]. Control Theory & Applications, 2017, 34(1): 1-12(in Chinese).
[3] 段伟锋.硅单晶等径阶段直径模型辨识与控制研究[D].西安:西安理工大学,2017.
DUAN W F. Model identification and control of silicon single crystal diameter for constant-diameter growth stage[D]. Xi′an: Xi′an University of Technology, 2017(in Chinese).
[4] ZHANG X, GONG L F, WU B, et al. Characteristics and value enhancement of cast silicon ingots[J]. Solar Energy Materials and Solar Cells, 2015, 139: 27-33.
[5] 吕菲,耿博耘.异型加热器在直拉硅单晶炉中的应用[J].中国电子科学研究院学报,2015,10(6):646-651.
LV F, GENG B Y. Application of irregular heater in Cz silicon crystal furnace[J]. Journal of China Academy of Electronics and Information Technology, 2015, 10(6): 646-651(in Chinese).
[6] 高农农,葛林.加热器直径对200 mm太阳能级单晶硅加热效率、能耗和氧含量的影响[J].硅酸盐通报,2015,34(12):3658-3662.
GAO N N, GE L. Influence of heater diameter on heating efficiency, power consumption and oxygen concentration in the solar-grade single silicon[J]. Bulletin of the Chinese Ceramic Society, 2015, 34(12): 3658-3662(in Chinese).
[7] 于宁.硅单晶炉用反射和吸收红外辐射涂料的研究[D].沈阳:沈阳理工大学,2011.
YU N. The study on reflection and absorption of infrared radiation coating using in silicon single crystal furnace[D]. Shenyang: Shenyang Ligong University, 2011(in Chinese).
[8] 李巨晓,孙新利,王飞尧,等.直拉法硅单晶生长时晃动的分析及控制[J].半导体技术,2010,35(11):1083-1086.
LI J X, SUN X L, WANG F Y, et al. Analysis and control of oscillation phenomenon during the czochralski silicon growth[J]. Semiconductor Technology, 2010, 35(11): 1083-1086(in Chinese).
[9] 耿博耘,刘锋,韩焕鹏.单晶炉保温与热屏优化的数值模拟与改造[J].电子工业专用设备,2014,43(8):20-24.
GENG B Y, LIU F, HAN H P. Numerical simulation optimization and equipment transformation of thermal insulation and guide shell in crystal furnace[J]. Equipment for Electronic Products Manufacturing, 2014, 43(8): 20-24(in Chinese).
[10] 关小军,张向宇,潘忠奔,等.热屏位置影响直拉单晶硅熔体和固液界面的模拟[J].人工晶体学报,2015,44(2):329-336.
GUAN X J, ZHANG X Y, PAN Z B, et al. Simulation on effect of heat shield position on the melt and solid liquid interface Cz silicon[J]. Journal of Synthetic Crystals, 2015, 44(2): 329-336(in Chinese).
[11] HUANG L Y, LEE P C, HSIEH C K, et al. On the hot-zone design of Czochralski silicon growth for photovoltaic applications[J]. Journal of Crystal Growth, 2004, 261(4): 433-443.
[12] CAO J W, GAO Y, CHEN Y, et al. Simulation aided hot zone design for faster growth of Cz silicon mono crystals[J]. Rare Metals, 2011, 30(2): 155-159.
[13] SMIRNOVA O V, DURNEV N V, SHANDRAKOVA K E, et al. Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulation[J]. Journal of Crystal Growth, 2008, 310(7/8/9): 2185-2191.
[14] ZHAI J P, JIANG J W, LIU K G, et al. Study on the performance of alumina, zirconia and molybdenum composite insulation system for sapphire single crystal furnace[J]. IOP Conference Series: Materials Science and Engineering, 2018, 397: 012057.
[15] 杨轶涵,李进,王长春,等.热屏间距对泡生法蓝宝石单晶生长影响研究[J].人工晶体学报,2017,46(8):1430-1435.
YANG Y H, LI J, WANG C C, et al. Effect of the heat-shield spacing on the crystal growth of Kyropoulos sapphire[J]. Journal of Synthetic Crystals, 2017, 46(8): 1430-1435(in Chinese).
[16] 杨轶涵,李进,王长春,等.热屏结构对泡生法蓝宝石单晶炉功率影响研究[J].人工晶体学报,2017,46(4):589-593.
YANG Y H, LI J, WANG C C, et al. Effect of heat shield structure on the power of kyropoulos sapphire single crystal furnace[J]. Journal of Synthetic Crystals, 2017, 46(4): 589-593(in Chinese).
[17] 耿博耘,韩焕鹏.直拉单晶炉减薄型加热器的数值模拟与实验分析[J].电子工业专用设备,2015,44(3):26-31.
GENG B Y, HAN H P. Numerical simulation and experiment analysis of thinned heater in czochralski crystal furnace[J]. Equipment for Electronic Products Manufacturing, 2015, 44(3): 26-31(in Chinese).
[18] 韩焕鹏, 刘锋, 周传月, 等. 太阳能级单晶炉热场的适应性改造研究[J].电子工业专用设备,2014,43(9):17-21.
HAN H P, LIU F, ZHOU C Y, et al. Research of the solar furnace hotzone modification[J]. Equipment for Electronic Products Manufacturing, 2014, 43(9): 17-21(in Chinese).
[19] 谢俊启,韩焕鹏.单晶炉密闭式热场改造研究[J].电子工业专用设备,2012,41(8):7-10.
XIE J Q, HAN H P. Research on improved of closed heat zone of the CZ single crystal crower[J]. Equipment for Electronic Products Manufacturing, 2012, 41(8): 7-10(in Chinese).
[20] 苏文佳, 左然, Vladimir Kalaev. 单晶炉导流筒、热屏及炭毡对单晶硅生长影响的优化模拟[J].人工晶体学报,2010,39(2):524-528+544.
SU W J, ZUO R, VLADIMIR K. Optimization of crystal growth by changes of flow guide, radiation shield and insulation in Cz Si furnace[J]. Journal of Synthetic Crystals, 2010, 39(2): 524-528+544(in Chinese).