半绝缘碳化硅单晶衬底的研究进展

摘要/Abstract

摘要： 碳化硅(SiC)被认为是最重要的宽禁带半导体材料之一,具有禁带宽度大、击穿电场高、热导率高、电子饱和速率高、抗辐射能力强等优越性质。基于SiC材料制备的半导体器件不仅能在更高的温度下稳定运行,而且在高电压、高频率状态下也具有更高的可靠性。近20年来,随着材料生长技术、制造工艺与器件物理的迅速发展, SiC材料及器件在雷达、5G通信、电动汽车等领域获得了广泛应用,对国防工业发展、国家信息安全、国民经济建设均产生了极其重要的影响。在以SiC为基础的大功率半导体器件产业链中,高质量的SiC单晶制备及其产业化是最为重要的一环。本文针对半绝缘SiC单晶衬底材料国内外发展进行了分析归纳,重点介绍了山东大学半绝缘SiC的研究历程、现状,并对研究和产业发展、存在的挑战做了论述。

关键词: SiC单晶衬底, 微管密度, 6英寸, 半绝缘

Abstract: Silicon carbide (SiC) is considered as one of the most important wide band gap materials. It has many advantages, such as wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation velocity and strong radiation resistance. The semiconductor devices based on SiC materials can not only operate at higher temperature, but also have higher reliability at high voltage and high frequency. In the past 20 years, with the development of material growth technology, manufacturing process and device physics, SiC materials and devices have been widely used in radar, 5G telecom technology, electric vehicles and other fields, which has an extremely important impact on the development of national defense industry, information security and economy. In the SiC based high-power semiconductor device industrial chain, high-quality SiC single crystal preparation and industrialization is the most important part. In this paper, the development of semi-insulating SiC single crystal substrate materials at home and abroad is summarized. The research history and current progresses of semi-insulating SiC in Shandong University are mainly introduced. The research and industrialization and existing challenges are discussed.

Key words: SiC single crystal substrate, micropipe density, 6 inch, semi-insulating

中图分类号:

TQ163⁺.4

彭燕, 陈秀芳, 谢雪健, 徐现刚, 胡小波, 杨祥龙, 于国建, 王垚浩. 半绝缘碳化硅单晶衬底的研究进展[J]. 人工晶体学报, 2021, 50(4): 619-628.

PENG Yan, CHEN Xiufang, XIE Xuejian, XU Xiangang, HU Xiaobo, YANG Xianglong, YU Guojian, WANG Yaohao. Research Progress of Semi-Insulating Silicon Carbide Single Crystal Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(4): 619-628.

参考文献

[1] 马保慧.基于Si和SiC器件的逆变器系统性能对比研究[J].电气传动,2017,47(8):3-6+48.
MA B H. Comparsion analysis for inverter system based on Si and SiC power devices[J]. Electric Drive, 2017, 47(8): 3-6+48(in Chinese).
[2] ZHU W Z, YAN M. Effect of gas flow rate on ultrafine SiC powders synthesized through chemical vapor deposition in the SiH₄-C₂H₄-H₂ system[J]. Scripta Materialia, 1998, 39(12): 1675-1680.
[3] LELY J A. Darstellung von einkristallen von silicium carbid und beherrschung von art und menge der eingebautem verunreingungen[EB/OL]. 1955.
[4] TAIROV Y M, TSVETKOV V F. Investigation of growth processes of ingots of silicon carbide single crystals[J]. Journal of Crystal Growth, 1978, 43(2): 209-212.
[5] RENGARAJAN V, BROUHARD B K, NOLAN M C, et al. Axial gradient transport (AGT) growth process and apparatus:PA, US, 14/967926[P]. 2015-12-14.
[6] ZWIEBACK I, ANDERSON T E, SOUZIS A E, et al. Large diameter, high quality SiC single crystals, method and apparatus: WO, US8741413 B2[P]. 2014-06-03.
[7] HOBGOOD H M, GLASS R C, AUGUSTINE G, et al. Semi-insulating 6H-SiC grown by physical vapor transport[J]. Applied Physics Letters, 1995, 66(11): 1364-1366.
[8] LI Q, POLYAKOV A Y, SKOWRONSKI M, et al. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers[J]. Journal of Applied Physics, 2005, 97(11): 113705.
[9] BERKMAN E, LEONARD R T, PAISLEY M J, et al. Defect status in SiC manufacturing[J]. Materials Science Forum, 2009, 615/616/617: 3-6.
[10] POWELL A R, SUMAKERIS J J, KHLEBNIKOV Y, et al. Bulk growth of large area SiC crystals[J]. Materials Science Forum, 2016, 858: 5-10.
[11] LIN H. Power SiC 2016: materials, devices, and applications[R]. 2016.
[12] 彭燕,宁丽娜,高玉强,等.4H-SiC晶体表面形貌和多型结构变化研究[J].人工晶体学报,2010,39(3):559-563.
PENG Y, NING L N, GAO Y Q, et al. Study on surface morphology and polytype transition of 4H-SiC single crystals[J]. Journal of Synthetic Crystals, 2010, 39(3): 559-563(in Chinese).
[13] LIU J L, GAO J Q, CHENG J K, et al. Methods for the reduction of the micropipe density in SiC single crystals[J]. Journal of Materials Science, 2007, 42(15): 6148-6152.
[14] KUHR T A, SANCHEZ E K, SKOWRONSKI M, et al. Hexagonal voids and the formation of micropipes during SiC sublimation growth[J]. Journal of Applied Physics, 2001, 89(8): 4625-4630.
[15] YANG X L, YANG K, CHEN X F, et al. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces[J]. Materials Science Forum, 2015, 821/822/823: 68-72.
[16] TSUGE H, USHIO S, SATO S, et al. Growth of low basal plane dislocation density 4H-SiC crystals in controlled temperature distribution inside the crucible[J]. Materials Science Forum, 2013, 740/741/742: 7-10.
[17] MA X Y. Superscrew dislocations in silicon carbide: dissociation, aggregation, and formation[J]. Journal of Applied Physics, 2006, 99(6): 063513.
[18] KOHN V G, ARGUNOVA T S, JE J H. Study of micropipe structure in SiC by X-ray phase contrast imaging[J]. Applied Physics Letters, 2007, 91(17): 171901.
[19] HEINDL J, DORSCH W, STRUNK H P, et al. Dislocation content of micropipes in SiC[J]. Physical Review Letters, 1998, 80(4): 740.
[20] MANNING I, MATSUDA Y, CHUNG G, et al. Progress in bulk 4H SiC crystal growth for 150 mm wafer production[J]. Materials Science Forum, 2020, 1004: 37-43.
[21] LEONARD R T, KHLEBNIKOV Y, POWELL A R, et al. 100 mm 4HN-SiC wafers with zero micropipe density[J]. Materials Science Forum, 2008, 600/601/602/603: 7-10.
[22] QUAST J, HANSEN D, LOBODA M, et al. High quality 150 mm 4H SiC wafers for power device production[J]. Materials Science Forum, 2015, 821/822/823: 56-59.
[23] MANNING I, ZHANG J, THOMAS B, et al. Large area 4H SiC products for power electronic devices[J]. Materials Science Forum, 2016, 858: 11-14.
[24] LENDENMANN H, DAHLQUIST F, JOHANSSON N, et al. Long termoperation of 4.5 kV PiN and 2.5 kV JBS Diodes[J]. Materials Science Forum, 2001,353-356: 727-730.
[25] CHEN Y, DUDLEY M. Direct determination of dislocation sense of closed-core threading screw dislocations using synchrotron white beam X-ray topography in 4H silicon carbide[J]. Applied Physics Letters, 2007, 91(14): 141918.
[26] HUANG X R, DUDLEY M, VETTER W M, et al. Direct evidence of micropipe-related pure superscrew dislocations in SiC[J]. Applied Physics Letters, 1999, 74(3): 353-355.
[27] SCHMITT E, STRAUBINGER T, RASP M, et al. Defect reduction in sublimation grown SiC bulk crystals[J]. Superlattices and Microstructures, 2006, 40(4/5/6): 320-327.
[28] SAKWE S A, MüLLER R, WELLMANN P J. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC[J]. Journal of Crystal Growth, 2006, 289(2): 520-526.
[29] HIGASHI E, TAJIMA M, HOSHINO N, et al. Defect observation in SiC wafers by room-temperature photoluminescence mapping[J]. Materials Science in Semiconductor Processing, 2006, 9(1/2/3): 53-57.
[30] PENG Y, XU X G, HU X B, et al. A comparative study of the morphologies of etch pits in semi-insulating silicon carbide single crystals[J]. Materials Science Forum, 2011, 679/680: 145-152.
[31] XU H Y, GAO Y Q, PENG Y, et al. The stress birefringence images of low angle grain boundaries in 6H-SiC single crystals[J]. Crystal Research and Technology, 2012, 47(6): 603-609.
[32] CHEN X F, ZHANG F S, YANG X L, et al. Reduction of dislocation density of SiC crystals grown on seeds after H₂ etching[J]. 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2016: 1.
[33] YANG X L, CHEN X F, PENG Y, et al. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth[J]. CrystEngComm, 2018, 20(12): 1705-1710.
[34] PENG Y, XU X G, HU X B, et al. Raman spectroscopic study of the electrical properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport method[J]. Journal of Applied Physics, 2010, 107(9): 093519.
[35] HU X B, PENG Y, WEI R S, et al. Characterization of electrical properties of n-type 4H-SiC single crystals by Raman spectroscopy[J]. ECS Journal of Solid State Science and Technology, 2013, 2(8): N3022-N3024.
[36] FANTON M A, LI Q, POLYAKOV A Y, et al. Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method[J]. Journal of Crystal Growth, 2007, 300(2): 314-318.
[37] JENNY J R, MüLLER S G, POWELL A, et al. High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method[J]. Journal of Electronic Materials, 2002, 31(5): 366-369.
[38] BICKERMANN M, WEINGARTNER R, WINNACKER A. On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield[J]. Journal of Crystal Growth, 2003, 254(3/4): 390-399.
[39] SON N T, CARLSSON P, UL HASSAN J, et al. Defects and carrier compensation in semi-insulating 4H-SiC substrates[J]. Physical Review B, 2007, 75(15): 155204.
[40] NING L, HU X, CHEN X, et al. Growth of vanadium doped semi-insulating 6H-SiC[J]. Chinese Journal of Semiconductors, 2007, 28: 221-224.
[41] 彭燕,陈秀芳,彭娟,等.高质量半绝缘φ150 mm 4H-SiC单晶生长研究[J].人工晶体学报,2016,45(5):1145-1152.
PENG Y, CHEN X F, PENG J, et al. Study on the growth of high quality semi-insulating φ150 mm 4H-SiC single crystal[J]. Journal of Synthetic Crystals, 2016, 45(5): 1145-1152(in Chinese).
[42] 宁丽娜,胡小波,王英民,等.硅粉形貌对人工合成高纯碳化硅粉料的影响[J].功能材料,2008,39(12):1989-1991.
NING L N, HU X B, WANG Y M, et al. Research on silicon powder and synthesis condition in synthesis of high purity SiC powder[J]. Journal of Functional Materials, 2008, 39(12): 1989-1991(in Chinese).
[43] 杨昆,陈秀芳,杨祥龙,等.高纯半绝缘4H-SiC单晶的生长[J].人工晶体学报,2014,43(11):3055-3057.
YANG K, CHEN X F, YANG X L, et al. Growth of high purity semi-insulting 4H-Si C single crystals[J]. Journal of Synthetic Crystals, 2014, 43(11): 3055-3057(in Chinese).
[44] XIE X J, HU X B, CHEN X F, et al. Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction[J]. CrystEngComm, 2017, 19(43): 6527-6532.
[45] SUNG W, WANG J, HUANG A Q, et al. Design and investigation of frequency capability of 15 kV 4H-SiC IGBT[J]. 2009 21 st International Symposium on Power Semiconductor Devices & IC’S, 2009: 271-274.
[46] LARKIN D J. SiC dopant incorporation control using site-competition CVD[J]. Physica Status Solidi (b), 1997, 202(1): 305-320.
[47] VODAKOV Y A, LOMAKINA G A, MOKHOV E N, et al. Silicon carbide doped with gallium[J]. Physica Status Solidi (a), 1976, 35(1): 37-42.
[48] SUI Y, WALDEN G G, WANG X K, et al. Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices[J]. Materials Science Forum, 2006, 527/528/529: 1449-1452.
[49] MÜLLER R, KÜNECKE U, WEINGÄRTNER R, et al. High Al-doping of SiC using a modified PVT (M-PVT) growth set-up[J]. Materials Science Forum, 2005, 483/484/485: 31-34.
[50] TOKUDA Y, KOJIMA J, HARA K, et al. 4H-SiC bulk growth using high-temperature gas source method [J]. Materials Science Forum, 2014, 778-780: 51-54.
[51] TOKUDA Y, HOSHINO N, KUNO H, et al. Fast 4H-SiC bulk growth by high-temperature gas source method [J]. Materials Science Forum, 2020, 1004: 5-13.
[52] OKAMOTO T, KANDA T, TOKUDA Y, et al. Development of 150-mm 4H-SiC substrates using a high-temperature chemical vapor deposition method[J]. Materials Science Forum, 2020, 1004: 14-19.
[53] HARADA S, YAMAMOTOB Y J, XIAO S, et al. Surface morphology and threading dislocation conversion behavior during solution growth of 4H-SiC using Si-Al solvent [J]. Materials Science Forum, 2014, 778-780: 67-70.
[54] KADO M, DAIKOKU H, SAKAMOTO H, et al. High-speed growth of 4H-SiC single crystal using Si-Cr based melt[J]. Materials Science Forum, 2013, 740/741/742: 73-76.
[55] YOSHIKAWA T, KAWANISHI S, MORITA K, et al. Investigation of solution growth of SiC by temperature difference method using Fe-Si solvent[J]. Materials Science Forum, 2013, 740/741/742: 31-34.
[56] KAWANISHI S, YOSHIKAWA T, MORITA K. Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC[J]. Materials Science Forum, 2013, 740/741/742: 35-38.
[57] ALEXANDER, SEKI K, KOZAWA S, et al. Polytype stability of 4H-SiC seed crystal on solution growth[J]. Materials Science Forum, 2011, 679/680: 24-27.
[58] KOMATSU N, MITANI T, TAKAHASHI T, et al. Growth rate and surface morphology of 4H-SiC single crystal grown under various supersaturations using Si-C solution[J]. Materials Science Forum, 2013, 740/741/742: 23-26.
[59] DANNO K, YAMAGUCHI S, KIMOTO H, et al. Trials of solution growth of dislocation-free 4H-SiC bulk crystals[J]. Materials Science Forum, 2016, 858: 19-22.
[60] KUSUNOKI K, YASHIRO N, OKADA N, et al. Growth of large diameter 4H-SiC by TSSG technique[J]. Materials Science Forum, 2013, 740/741/742: 65-68.
[61] KUSUNOKI K, KISHIDA Y, SEKI K. Solution growth of 4-inch diameter SiC single crystal using Si-Cr based solvent[J]. Materials Science Forum, 2019, 963: 85-88.