基于碳化硅衬底的宽禁带半导体外延

摘要/Abstract

摘要： 宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。

关键词: SiC衬底, 宽禁带半导体, 异质外延, 同质外延, 晶格失配, GaN, Ga₂O₃, 缺陷调控

Abstract: Wide bandgap semiconductors are ideal materials for the application of high power density, high frequency and low-loss power electronic devices, owning to the advantages of wide bandgap, high electron saturation velocity, and high breakdown field. Attributed to the high thermal conductivity, high chemical stability and high heat resistance of silicon carbide (SiC), epitaxy of wide bandgap semiconductors on SiC is promising to exploit the advantages of wide bandgap semiconductors and improve the performance of wide bandgap semiconductor devices. Benefiting from the continuous quality-improvement and cost-reduction of SiC substrates, wide bandgap semiconductors grown on SiC substrates are ushering in an explosive growth. Epitaxy of high quality wide bandgap semiconductors on SiC substrates is critical to the performance and reliability of wide bandgap semiconductor devices. This paper summarizes the recent progress obtained on epitaxial growth of SiC, gallium nitride (GaN) and gallium oxide (Ga₂O₃) on SiC substrates. In addition, the prospective of wide bandgap semiconductors grown on SiC substrates for high-performance electronics are prospected.

Key words: SiC substrate, wide bandgap semiconductor, heteroepitaxy, homoepitaxy, lattice mismatch, GaN, Ga₂O₃, defect control

中图分类号:

TN304

开翠红, 王蓉, 杨德仁, 皮孝东. 基于碳化硅衬底的宽禁带半导体外延[J]. 人工晶体学报, 2021, 50(9): 1780-1795.

KAI Cuihong, WANG Rong, YANG Deren, PI Xiaodong. Epitaxy of Wide Bandgap Semiconductors on Silicon Carbide Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(9): 1780-1795.

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