柔性无机铁电薄膜的制备及其在存储器领域应用研究进展

摘要/Abstract

摘要： 与传统硅基电子相比,柔性电子因其独特的便携性、折叠卷曲性和生物相容性被广泛研究。柔性存储器作为柔性电子重要分支,在可穿戴设备、智慧医疗、电子皮肤等领域展现出良好的应用前景。同时随着5G、人工智能、物联网等新一代信息技术深入应用,市场对高密度、非易失、超低功耗柔性存储器的需求持续释放,催生了柔性铁电存储器件的研究热潮。本文综述了近年来柔性无机铁电薄膜的制备及其在存储器领域应用进展。首先介绍了柔性铁电薄膜制造技术的发展情况,包括柔性基板上的范德瓦耳斯异质外延、刚性基板上的化学蚀刻分层、新型二维(2D)铁电材料生长等,然后介绍了基于无机铁电薄膜的柔性存储器的研究进展,最后对柔性铁电存储器的未来发展进行了展望。

关键词: 柔性, 无机材料, 铁电薄膜, 范德瓦耳斯异质外延, 化学蚀刻, 二维铁电材料, 存储器

Abstract: Compared to conventional silicon-based electronics, flexible electronic devices have been extensively studied for their unique advantages of distinguished portability, conformal contact characteristics, and human-friendly interfaces. As an important branch of flexible electronics, flexible memory has shown good application prospects in wearable devices, smart medical care, electronic skin and other fields. At the same time, with the in-depth application of 5G, artificial intelligence, the internet of things and other new generation of information technologies, the market demand for high density, non volatile, ultra-low power consumption of flexible memory continues to release, giving birth to the research boom of flexible ferroelectric memory devices. Herein, the preparation of flexible ferroelectric films and the progress of their application in memory field are reviewed. Prevailing methods for preparing flexible ferroelectric films including the van der Waals heteroepitaxy on flexible substrate, delamination of the ferroelectric films on rigid substrate by chemical etching techniques, and growth of novel 2D ferroelectric materials are summarized. The research progress of flexible ferroelectric devices applied to memories are also be discussed. Finally, the challenges and prospects of flexible ferroelectric devices in the future are briefly proposed.

Key words: flexible, inorganic material, ferroelectric thin film, van der Waals heteroepitaxy, chemical etching, 2D ferroelectric material, memory

中图分类号:

O484

戚佳斌, 谢欣瑜, 李忠贤. 柔性无机铁电薄膜的制备及其在存储器领域应用研究进展[J]. 人工晶体学报, 2023, 52(3): 380-393.

QI Jiabin, XIE Xinyu, LEE ChoongHyun. Research Progress on Preparation of Flexible Inorganic Ferroelectric Thin Film and Its Application in Memory Field[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(3): 380-393.

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