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人工晶体学报 ›› 2023, Vol. 52 ›› Issue (3): 476-484.

• 研究论文 • 上一篇    下一篇

退火时间及后退火对Cu2(CdxZn1-x)SnS4/CdS薄膜太阳电池性能影响的研究

王佳文1, 黄勇2, 郑超凡3, 王语灏1, 王威1, 毛梦洁1   

  1. 1.金陵科技学院材料工程学院,南京 211169;
    2.金陵科技学院理学院,南京 211169;
    3.中国电子科技集团公司第二十八研究所,南京 210007
  • 收稿日期:2022-11-09 出版日期:2023-03-15 发布日期:2023-04-06
  • 通信作者: 黄 勇,博士,副教授。E-mail:yongh@jit.edu.cn
    王 威,博士,副教授。E-mail:wangwei@jit.edu.cn
  • 作者简介:王佳文(2002—),男,江苏省人。E-mail:1398030344@qq.com
  • 基金资助:
    国家自然科学基金(61804069);中国博士后科学基金(2021M702416)

Effect of Annealing Time and Post-Annealing on Performance of Cu2(CdxZn1-x)SnS4/CdS Thin Film Solar Cells

WANG Jiawen1, HUANG Yong2, ZHENG Chaofan3, WANG Yuhao1, WANG Wei1, MAO Mengjie1   

  1. 1. School of Materials Engineering, Jinling Institute of Technology, Nanjing 211169, China;
    2. School of Science, Jinling Institute of Technology, Nanjing 211169, China;
    3. The 28th Research Institute of China Electronics Technology Group Corporation, Nanjing 210007, China
  • Received:2022-11-09 Online:2023-03-15 Published:2023-04-06

摘要: Cu2ZnSnS4薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu2(CdxZn1-x)SnS4(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影响。研究结果表明,所制备的薄膜为CCZTS相,无其他杂相,薄膜表面平整且致密,结晶性较好。随着退火时间增加,薄膜的晶粒尺寸有所增大,薄膜太阳电池的pn结质量得到提升,其性能也随之提高。通过对薄膜太阳电池进行后退火处理,分析了吸收层的元素扩散对电池性能的影响,在Cd元素形成梯度分布时,电池性能有所提高。随着后退火温度的增加,其电池性能和pn结质量呈现先提高后下降的趋势。经后退火300 ℃处理后,电池转换效率最佳,为3.13%。

关键词: Cu2(CdxZn1-x)SnS4薄膜, CCZTS/CdS太阳电池, 退火时间, 后退火, 纳米墨水法, 化学浴沉积

Abstract: Cu2ZnSnS4 thin films have attracted much attention due to their abundant elemental crust content, non-toxic and excellent photoelectric properties. In this paper, Cu2(CdxZn1-x)SnS4 (CCZTS) thin films were prepared by partially replacing Zn with Cd based on nano-ink method. The effects of annealing time and post-annealing temperature on the properties of the thin films and solar cells were studied. The results show that the prepared thin films are CCZTS phase without other heterogeneous phases, and the surface of thin films is flat and dense with good crystallinity. With the increase of annealing time, the grain size of thin film increases, the quality of pn junction of the thin film solar cells is improved, and performance of the solar cells is also improved. The effect of elemental diffusion in the absorber layer on the performance of solar cells after post-annealing was analyzed, and the performance of solar cell was improved when Cd elements formed a gradient distribution. With the increase of post-annealing temperature, both of the solar cell performance and pn junction quality first increase and then decrease. The solar cell conversion efficiency is optimal (3.13%) after 300 ℃ post-annealing treatment.

Key words: Cu2(CdxZn1-x)SnS4 thin film, CCZTS/CdS solar cell, annealing time, post-annealing, nano-ink method, chemical bath deposition

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