用于单片集成的硅基外延Ⅲ-Ⅴ族量子阱和量子点激光器研究

摘要/Abstract

摘要： 硅基光电子技术以光电子与微电子的深度融合为特征,是后摩尔时代的核心技术。硅基光电子芯片可以利用成熟的微电子平台实现量产,具有功耗低、集成密度大、传输速率快、可靠性高等优点,广泛应用于数据中心、通信系统等领域。除硅基激光器外,硅基光探测器、硅基光调制器等硅基光电子器件技术已经基本成熟,但作为最有希望实现低成本、大尺寸单片集成的硅基外延激光器仍然面临着诸多挑战。在此背景下,本文从直接外延无偏角III-V/Si(001)衬底、无偏角硅基激光器材料、外延技术,以及单片集成等方面探讨了近些年国内外硅基光源的研究进展,重点介绍了本研究组在硅基外延III-V族量子阱和量子点激光器方面的研究进展,包括无反相畴GaAs/Si(001)衬底的制备、硅基InGaAs/AlGaAs量子阱激光器材料外延、硅基InAs/GaAs量子点激光器材料外延和新型并联方式共面电极硅基激光器芯片制作等。

关键词: 硅基光电子, 硅基外延激光器, 无偏角Si (001)衬底, 量子阱激光器, 量子点激光器, 对称负极芯片结构

Abstract: Silicon photonics is the core technology in the post-Moore’s era, characterized by the deep integration of optoelectronics and microelectronics. Silicon photonics can leverage the existing complementary metal-oxide-semiconductor (CMOS) infrastructure to fabricate low power consumption, high integration density, fast transmission speed, and high-reliability silicon photonic chips which are widely employed in data centers and communication systems. At present, most optoelectronic devices like Si-based photodetectors and Si-based optical modulators have realized on-chip integration except for the Si-based lasers as essential light sources. The directly epitaxial III-V materials on silicon substrates is recognized as one of the most promising solutions to achieve low-cost and large-size monolithic integration of Si-based lasers, still facing many significant challenges. In this paper, the research progress of Si-based light sources is presented from the aspects of directly epitaxial on-axis III-V/Si (001) substrates, on-axis Si-based laser materials, epitaxy technology and monolithic integration at first. Then the achievements in Si-based directly epitaxial quantum well lasers and quantum dot lasers in our group are reported in detail, including the growth of antiphase domains-free GaAs/Si (001) substrates, epitaxial materials of InGaAs/AlGaAs quantum well lasers and InAs/GaAs quantum dot lasers, and fabrication of novel coplanar electrode structures of silicon photonic chips in parallel mode.

Key words: silicon photonic, epitaxial lasers on silicon, on-axis silicon (001) substrate, quantum well laser, quantum dot laser, symmetrical negative chip structure

中图分类号:

TN365

王俊, 葛庆, 刘帅呈, 马博杰, 刘倬良, 翟浩, 林枫, 江晨, 刘昊, 刘凯, 杨一粟, 王琦, 黄永清, 任晓敏. 用于单片集成的硅基外延Ⅲ-Ⅴ族量子阱和量子点激光器研究[J]. 人工晶体学报, 2023, 52(5): 766-782.

WANG Jun, GE Qing, LIU Shuaicheng, MA Bojie, LIU Zhuoliang, ZHAI Hao, LIN Feng, JIANG Chen, LIU Hao, LIU Kai, YANG Yisu, WANG Qi, HUANG Yongqing, REN Xiaomin. Investigation of Epitaxial III-V Quantum Well and Quantum Dot Lasers on Silicon for Monolithic Integration[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 766-782.

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