基于mist CVD的高纯相α-Ga2O3生长与光电响应特性研究

doi:10.16553/j.cnki.issn1000-985x.2024.0260

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 233-243.DOI: 10.16553/j.cnki.issn1000-985x.2024.0260

基于mist CVD的高纯相α-Ga₂O₃生长与光电响应特性研究

姚苏昊¹, 张茂林^1,2, 季学强^1,2, 杨莉莉^1,2, 李山^1,2, 郭宇锋², 唐为华^1,2

1.南京邮电大学,集成电路科学与工程学院氧化镓半导体创新中心,南京 210023;
2.南京邮电大学,射频集成与微组装技术国家地方联合工程实验室,南京 210023

收稿日期:2024-10-28 发布日期:2025-03-04
通信作者: 唐为华,博士,教授。E-mail:whtang@njupt.edu.cn；唐为华,南京邮电大学教授、博导,中国晶体学会理事会成员,中国物理学会X射线衍射专业委员会委员,中国物理学会固体缺陷专业委员会委员。先后入选国家“新世纪百千万人才工程”、中国科学院“百人计划”、江苏省“双创团队”领军人才,享受国务院政府特殊津贴。近十年以来专注氧化镓材料、物性及器件研究,已在Nat Com、ACS Nano、Appl Phys Lett、J Alloys Compd等SCI期刊上发表相关成果200余篇,是国内开展氧化镓科学研究与产业化实践的先行者。
作者简介:姚苏昊(2000—),男,江苏省人,博士研究生。E-mail:20232211112@njupt.edu.cn
基金资助:
国家重点研发计划(2022YFB3605404);国家自然科学基金联合项目(U23A20349);江苏省双创人才团队项目(JSSCTD202351)

Mist CVD Grown High-Phase-Purity α-Ga₂O₃ and Its Photoresponse Performance

YAO Suhao¹, ZHANG Maolin^{1, 2}, JI Xueqiang^{1, 2}, YANG Lili^{1, 2}, LI Shan^{1, 2}, GUO Yufeng², TANG Weihua^{1, 2}

1. Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2. National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Received:2024-10-28 Published:2025-03-04

摘要/Abstract

摘要： 超宽禁带半导体氧化镓(Ga₂O₃)在功率电子和信息传感方面有重要应用,其高效、经济的制备方法是实现产业推广的重要环节。本文报道了一种Sn辅助雾相化学气相沉积(mist CVD)技术,基于这种非真空、低成本方法在c面蓝宝石衬底上成功外延生长了高质量纯相α-Ga₂O₃薄膜。实验通过mist CVD生长温度的调控探索,获得了纯相α-Ga₂O₃薄膜外延生长的温度区间为500~600 ℃。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见吸收光谱、X射线光电子能谱(XPS)等方法对纯相α-Ga₂O₃薄膜进行了物相、形貌、光学特征、元素含量和价态表征,结果表明600 ℃生长的α-Ga₂O₃薄膜具有更高的结晶度,更致密和平整的表面形貌。进一步地,通过构建金属-半导体-金属(MSM)结构的光电探测器,研究了α-Ga₂O₃薄膜的深紫外(DUV)光电响应性能。500和600 ℃制备α-Ga₂O₃薄膜,其光暗电流比(PDCR)分别为5.85×10⁵和7.48×10³,外量子效率(EQE)分别为21.8%和520%,响应度分别为0.044和1.09 A/W。在6 V偏压和254 nm光照下,500 ℃生长的α-Ga₂O₃薄膜的响应时间为0.97/0.36 s,600 ℃的样品响应时间却增大为2.89/4.92 s,这主要是Sn辅助生长在α-Ga₂O₃薄膜内形成了施主杂质,影响了载流子的输运效率。

关键词: α-Ga₂O₃, 雾相化学气相沉积, Sn辅助生长, 光电响应, 沉积温度, 掺杂激活

Abstract: Ultra-wide bandgap semiconductor gallium oxide (Ga₂O₃) has important applications in power electronics and information sensing, its efficient and economical preparation is important to realize its industrial promotion. In this paper, a Sn-assisted mist chemical vapor deposition (mist CVD) technique is reported, based on which high-quality pure-phase α-Ga₂O₃ thin films were successfully epitaxially grown on c-plane sapphire substrates by this non-vacuum, low-cost method. The mist CVD growth temperature regulation experiment shows that the temperature for epitaxial growth of pure-phase α-Ga₂O₃ thin films is between 500 and 600 ℃. The physical phase, morphology, optical features, elemental content and valence of the pure-phase α-Ga₂O₃ thin films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectrophotometer, and X-ray photoelectron spectrometer (XPS) techniques. The results indicate that the α-Ga₂O₃ thin films grown at the temperature of 600 ℃ possess a higher degree of crystallinity, a denser and flatter surface morphology. Further, the deep-UV (DUV) photoresponse properties of α-Ga₂O₃ thin films were investigated by constructing photodetectors with metal-semiconductor-metal (MSM) structures. For α-Ga₂O₃ thin films prepared at 500 and 600 ℃, the photodetectors show photo-to-dark current ratios (PDCR) of 5.85×10⁵ and 7.48×10³, external quantum efficiencies (EQE) of 21.8% and 520%, and responsivities of 0.044 and 1.09 A/W, respectively. Under 6 V bias voltage and 254 nm illumination, the response time is 0.97/0.36 s for α-Ga₂O₃ thin film grown at 500 ℃, while it increases to 2.89/4.92 s for the sample grown at 600 ℃, which may be ascribed to the formation of donor impurities within the α-Ga₂O₃ thin films by Sn-assisted growth, and affecting the carrier transport efficiency.

Key words: α-Ga₂O₃, mist chemical vapor deposition, Sn-assisted growth, photoresponse, deposition temperature, doping activation

中图分类号:

姚苏昊, 张茂林, 季学强, 杨莉莉, 李山, 郭宇锋, 唐为华. 基于mist CVD的高纯相α-Ga₂O₃生长与光电响应特性研究[J]. 人工晶体学报, 2025, 54(2): 233-243.

YAO Suhao, ZHANG Maolin, JI Xueqiang, YANG Lili, LI Shan, GUO Yufeng, TANG Weihua. Mist CVD Grown High-Phase-Purity α-Ga₂O₃ and Its Photoresponse Performance[J]. Journal of Synthetic Crystals, 2025, 54(2): 233-243.

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基于mist CVD的高纯相α-Ga₂O₃生长与光电响应特性研究

Mist CVD Grown High-Phase-Purity α-Ga₂O₃ and Its Photoresponse Performance

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