MBE同质外延生长Sn掺杂β-Ga2O3(010)薄膜的电子输运性质研究

doi:10.16553/j.cnki.issn1000-985x.2024.0279

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 244-254.DOI: 10.16553/j.cnki.issn1000-985x.2024.0279

MBE同质外延生长Sn掺杂β-Ga₂O₃(010)薄膜的电子输运性质研究

张子琦¹, 杨珍妮^1,2, 况思良^1,2, 魏盛龙¹, 徐文静^1,2, 陈端阳³, 齐红基^2,3, 张洪良¹

1.厦门大学化学化工学院,固体表面物理化学国家重点实验室,厦门 361005;
2.杭州光学精密机械研究所,杭州 311421;
3.中国科学院上海光学精密机械研究所强激光材料重点实验室,上海 201800

收稿日期:2024-11-07 发布日期:2025-03-04
通信作者: 陈端阳,博士,高级工程师。E-mail:chenduanyang@siom.ac.cn；齐红基,博士,研究员。E-mail:qhj@siom.ac.cn；齐红基,中国科学院创新促进会优秀会员,上海光学精密机械研究所二级研究员、博士生导师,国家科技部重点研发计划项目负责人,杭州光学精密机械研究所所长,《人工晶体学报》编委。主要从事激光晶体、闪烁晶体及新型半导体氧化镓晶体研究。主持国家及省部级项目20余项,在国际期刊发表论文150余篇。曾获得军队科技进步二等奖、上海市技术发明一等奖等奖项。张洪良,博士,教授。E-mail:kelvinzhang@xmu.edu.cn；张洪良,厦门大学化学化工学院教授,国家高层次“青年”人才。研究方向有:宽禁带氧化物半导体薄膜外延、能带调控及光电探测器件;过渡金属氧化物薄膜电子结构与光、电、磁、催化性能构效关系研究。在国际期刊发表论文150余篇,申请专利11项。主持国家及省部级项目8项。曾获剑桥大学Herchel Smith Research Fellowship、TSMC最佳国际研究生科研奖。
作者简介:张子琦(1999—),男,河北省人,硕士研究生。E-mail:zhzq9912@163.com
基金资助:
国家重点研发计划(2022YFB3605501);国家自然科学基金(22275154)

Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth

ZHANG Ziqi¹, YANG Zhenni^{1, 2}, KUANG Siliang^{1, 2}, WEI Shenglong¹, XU Wenjing^{1, 2}, CHEN Duanyang³, QI Hongji^{2, 3}, ZHANG Hongliang¹

1. State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China;
2. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China;
3. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Received:2024-11-07 Published:2025-03-04

摘要/Abstract

摘要： 本文研究了利用分子束外延技术生长的非故意掺杂(UID)和锡掺杂的β-Ga₂O₃同质外延薄膜的电子输运性质。薄膜载流子浓度范围为3.2×10¹⁶至2.9×10¹⁹ cm^-3,载流子浓度为3.2×10¹⁶ cm^-3的非故意掺杂薄膜显示出优异的室温迁移率,为125 cm²·V^-1·s^-1,在80 K时的峰值迁移率为875 cm²·V^-1·s^-1,达到了当前MBE生长的Ga₂O₃薄膜的先进水平。利用温度相关霍尔测试表征同质外延薄膜的电子输运性质,计算得到锡掺杂剂的激活能为76.2 meV。通过散射模型的拟合计算,分析了这一系列同质外延薄膜的电子散射性质,在低温到高温过程中,来自本征缺陷的电离杂质散射及晶体中阴阳离子库仑力的极性光学声子(POP)散射限制了迁移率的增长。

关键词: β-Ga₂O₃, 外延薄膜, 掺杂, 激活能, 迁移率, 输运性质

Abstract: In this work, the electronic transport properties of unintentionally doped (UID) and tin-doped β-Ga₂O₃ homoepitaxial thin films grown by molecular beam epitaxy (MBE) are reported, with electron densities ranging from 3.2×10¹⁶ to 2.9×10¹⁹ cm^-3. The UID thin film with an electron density of 3.2×10¹⁶ cm^-3 exhibits an excellent room-temperature mobility of 125 cm²·V^-1·s^-1 and a peak mobility of 875 cm²·V^-1·s^-1 at 80 K, reaching the advanced standard of MBE-grown Ga₂O₃ thin films. Temperature-dependent Hall measurements were utilized to characterize the electronic transport properties of the homoepitaxial thin films, yielding a tin dopant activation energy of 76.2 meV. By fitting the scattering model, the electronic scattering properties of this series of homoepitaxial thin films were analyzed, revealing that ionized impurity (II) scattering from intrinsic defects and polar optical phonon (POP) scattering from Coulombic forces between cations and anions in the crystal limit the mobility growth at low and high temperatures, respectively.

Key words: β-Ga₂O₃, epitaxial thin film, doping, activation energy, mobility, transport property

中图分类号:

O738

张子琦, 杨珍妮, 况思良, 魏盛龙, 徐文静, 陈端阳, 齐红基, 张洪良. MBE同质外延生长Sn掺杂β-Ga₂O₃(010)薄膜的电子输运性质研究[J]. 人工晶体学报, 2025, 54(2): 244-254.

ZHANG Ziqi, YANG Zhenni, KUANG Siliang, WEI Shenglong, XU Wenjing, CHEN Duanyang, QI Hongji, ZHANG Hongliang. Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth[J]. Journal of Synthetic Crystals, 2025, 54(2): 244-254.

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MBE同质外延生长Sn掺杂β-Ga₂O₃(010)薄膜的电子输运性质研究

Electronic Transport Properties of Sn-Doped β-Ga₂O₃ (010) Thin Films Grown by MBE Homoepitaxial Growth

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