Application Status and Prospects of MPCVD Diamond

doi:10.16553/j.cnki.issn1000-985x.2025.0263

Abstract

Abstract: Diamond possesses a multitude of excellent properties， with the highest hardness and thermal conductivity among natural materials， wide light transmission range and excellent electrical properties， making it significantly applicable in precision machining， electronic information， defense industry and aerospace. In recent years， the continuous advancement of microwave plasma chemical vapor deposition （MPCVD） technology has greatly expanded the application scenarios for diamond materials. Its end-use applications have gradually extended from the initial abrasive tools to high-end fields. Notable examples include the high-quality synthesis of diamond in the jewelry industry， efficient thermal management solutions for high-power electronic devices， superior infrared transmission and laser damage resistance in optical components， and emerging potential in semiconductor and quantum technologies. This paper systematically elaborates on the core principles and growth control methods of MPCVD diamond preparation technology. Following the logical mainline of technical principles， performance optimization， industrial applications and bottleneck breakthroughs， the study offers an in-depth analysis of the current status， key technical challenges and research advances across four major application domains： lab-grown diamond， thermal management， optics and semiconductors. Furthermore， combined with technological development trends and market demand， the future prospects in cutting-edge fields such as next-generation power electronics and aerospace are discussed in this paper， with the aim of providing theoretical insights and strategic directions for the technological advancement and industrial implementation of MPCVD diamond materials.

Key words: MPCVD; diamond; lab-grown diamond; thermal management; optics; application market

CLC Number:

O799

ZHANG Hong, XIA Jiaqi, JU Yifang, ZHANG Shulong, HANG Yin. Application Status and Prospects of MPCVD Diamond[J]. Journal of Synthetic Crystals, 2026, 55(5): 653-670.

Figures/Tables 15

Fig.1 Equipment and principle for MPCVD diamond growth［19］. （a） Schematic diagram of the MPCVD equipment；（b） active species growth model of diamond

Fig.2 A 4.65 ct single-crystal diamond with the thickness of 10 mm grown by 24 times repetition of high rate growth with the growth rate of 68 μm/h［29］

Fig.3 A mosaic wafer 40 mm×60 mm in area and 1.8 mm thick consisting of 24 single crystal diamond plates［31］

Fig.4 A detailed description of the IBI-BLG mechanism （a）~（e） and the freestanding unpolished diamond single crystal （f） synthesized by heteroepitaxy on Ir/YSZ/ Si（001）［36］

Fig.5 Diamond-on-GaN bonded based on SAB technology［54］. （a） Schematic diagram of GaN/diamond bonded sample；（b） low magnification cross-sectional TEM image of the sample；（c） optical microscope image of the bonded GaN/diamond sample；（d） optical microscope image of the GaN/diamond sample after annealing at 700 ℃

Fig.6 Schematic diagram of the bonding process based on the Si bonding layer［55］

Fig.7 GaN-on-diamond prepared with an Si3N4 transition layer and its interface thermal resistance［58］. （a） STEM images with different scales showing the thickness of the nucleation layer and the remaining thickness of the Si3N4 layer；（b） diamond/Si3N4/GaN TBR with two different Si3N4 thicknesses

Fig.8 GaN-on-diamond process illustration by dual-sided diamond film deposition［64］

Fig.9 Cu-B/diamond composites reinforced with various diamond particle sizes for measured thermal conductivity and predicted thermal conductivity， along with the corresponding interfacial thermal conductance （a） and comparison of thermal conductivity （b）［76］

Table 1 Representative research progress of MPCVD diamond in the field of thermal management in recent years

应用领域	研究团队	材料/结构设计	关键技术/方法	主要成果与性能指标	参考文献
SiC散热	山东大学	4H-SiC基底上直接生长多晶金刚石	SiC减薄、金刚石沉积	GaN器件表面温度降低52.5 ℃，热阻降低约41%	［52］
Ga₂O₃散热	复旦大学	界面引入AlN中间层	脉冲激光沉积	热导率提升至6.0 W/（m·K），界面热导提升至60.9 MW/（m²·K）	［53］
GaN HEMT散热	大阪市立大学	GaN与单晶金刚石直接键合	表面活化键合（SAB）、退火优化	键合界面稳定，可承受700 ℃高温工艺，机械强度高	［54］
GaN HEMT散热	日本产业技术综合研究所	金刚石表面沉积~1 nm Si粘合层	SAB低温键合	界面非晶层<2 nm，剪切强度4.4 MPa，界面热阻<10 m²·K·GW^-1	［55］
GaN HEMT散热	斯坦福大学	Si₃N₄保护层，聚合物辅助植晶	高密度植晶、薄形核层控制	植晶密度>10^-2 cm^-2，界面热阻低至3.1 m²·K·GW^-1	［58］
GaN HEMT散热	西安交通大学	双侧金刚石生长（牺牲层+散热层）	低温沉积牺牲层、应力调控	GaN衬底残余应力降至0.5 GPa，界面结合强度高	［64］
封装散热	北京科技大学	Cu-B/金刚石复合材料，调控金刚石粒径	基体合金化（B）、界面碳化物控制	金刚石粒径701 μm时热导率达904 W/（m·K）	［76］
封装散热	北京科技大学	双峰金刚石颗粒、原位碳化物夹层	协同界面设计、高密度烧结	热导率达1 050 W/（m·K），创同类材料新高	［77］

Fig.10 Output characteristics of diamond laser［85］. （a） The powers of the Stokes output and residual pump as a function of pump power；（b） long-term power stability of pump and Stokes output for 1 h；（c） linewidth of pump in the free-running V-shaped diamond Raman laser （DRL） is 60 kHz；（d） linewidth of Stokes output is 105 kHz

Fig.11 Schematic representation of the subsequent growth of diamond after Ni assisted etching［96］

Fig.12 UV-Visible absorption spectra and transmittance spectra of diamonds before and after annealing treatment［98］. （a）~（c） Absorption spectra at different annealing temperatures and time；（d） transmission spectra of diamond samples

Fig.13 New strategy of “heterogeneous integrated electrostatic doping”［105］. （a） Heterogenous integration of boron-doped p-diamond with monolayer n-MoS2；（b） room temperature rectification

Fig.14 Schottky barrier height and work function between the five metals （Au， Ag， Pt， W， and Pd） deposited on an oxygen-terminated diamond and the diamond （a）， and Schottky junction band diagram （b）［113］

References 114

[1]	ARNAULT J C， SAADA S， RALCHENKO V. Chemical vapor deposition single-crystal diamond： a review［J］. Physica Status Solidi （RRL）-Rapid Research Letters， 2022， 16（1）： 2100354.
[2]	ZHENG Y T， LI C M， LIU J L， et al. Chemical vapor deposited diamond with versatile grades： from gemstone to quantum electronics［J］. Frontiers of Materials Science， 2022， 16（1）： 220590.
[3]	HERSHEY J W. The book of diamonds： their curious lore， properties， tests and synthetic manufacture［M］. New York： Hearthside Press， 1940.
[4]	LI Y， HAO X L， AN Y， et al. Hundred-watt level high-order mode all-fiberized random distributed feedback Raman fiber laser with high mode purity［J］. Chinese Optics Letters， 2023， 21（2）： 021406.
[5]	GRAEBNER J E， JIN S， KAMMLOTT G W， et al. Unusually high thermal conductivity in diamond films［J］. Applied Physics Letters， 1992， 60（13）： 1576-1578.
[6]	BUNDY F P， HALL H T， STRONG H M， et al. Man-made diamonds［J］. Nature， 1955， 176（4471）： 51-55.
[7]	MATSUMOTO S. Development of diamond synthesis techniques at low pressures［J］. Thin Solid Films， 2000， 368（2）： 231-236.
[8]	姜志刚. 直流热阴级PCVD法制备金刚石膜的研究［J］. 人工晶体学报， 1997， 26（3）： 328.
	JIANG Z G. Study on diamond films prepared by DC hot cathode PCVD method［J］. Journal of Synthetic Crystals， 1997， 26（3）： 328 （in Chinese）.
[9]	KURIHARA K， SASAKI K， KAWARADA M. Diamond synthesis by DC plasma jet CVD［J］. Materials and Manufacturing Processes， 1991， 6（2）： 241-256.
[10]	MITSUDA Y， KOJIMA Y， YOSHIDA T， et al. The growth of diamond in microwave plasma under low pressure［J］. Journal of Materials Science， 1987， 22（5）： 1557-1562.
[11]	陈光华，张阳. 金刚石薄膜的制备与应用［M］. 北京：化学工业出版社，2004.
	CHEN G H， ZHANG Y. The development and application of diamond film［M］. Beijing： Chemical Industry Press， 2004 （in Chinese）.
[12]	SPITSYN B. Handbook of crystal growth［J］. Elsevier， 1994， 3： 403-456.
[13]	DEVRIES R. Synthesis of diamond under metastable conditions［J］. Annual Review of Materials Research， 1987， 17： 161-187.
[14]	SOMMER M， MUI K， SMITH F W. Thermodynamic analysis of the chemical vapor deposition of diamond films［J］. Solid State Communications， 1989， 69（7）： 775-778.
[15]	YARBROUGH W A， MESSIER R. Current issues and problems in the chemical vapor deposition of diamond［J］. Science， 1990， 247（4943）： 688-696.
[16]	BAR-YAM Y， MOUSTAKAS T D. Defect-induced stabilization of diamond films［J］. Nature， 1989， 342（6251）： 786-787.
[17]	WANG J T， CARLSSON J O. A thermochemical model for diamond growth from the vapour phase［J］. Surface and Coatings Technology， 1990， 43： 1-9.
[18]	FRENKLACH M， SPEAR K E. Growth mechanism of vapor-deposited diamond［J］. Journal of Materials Research， 1988， 3（1）： 133-140.
[19]	张书隆. MPCVD法生长金刚石及其性能研究［D］. 北京：中国科学院大学， 2022.
	ZHANG S L. Study on the growth and properties of MPCVD diamond［D］. Beijing： University of Chinese Academy of Sciences， 2022 （in Chinese）.
[20]	FRIEL I， CLEWES S L， DHILLON H K， et al. Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition［J］. Diamond and Related Materials， 2009， 18（5/6/7/8）： 808-815.
[21]	NAD S， GU Y J， ASMUSSEN J. Growth strategies for large and high quality single crystal diamond substrates［J］. Diamond and Related Materials， 2015， 60： 26-34.
[22]	HORINO Y， CHAYAHARA A， MOKUNO Y， et al. High-rate growth of large diamonds by microwave plasma chemical vapor deposition with newly designed substrate holders［J］. New Diamond and Frontier Carbon Technology， 2006， 16（2）： 63-69.
[23]	REN Y， LI X G， LV W， et al. Recent progress in homoepitaxial single-crystal diamond growth via MPCVD［J］. Journal of Materials Science： Materials in Electronics， 2024， 35（7）： 525.
[24]	DERKAOUI N， ROND C， HASSOUNI K， et al. Spectroscopic analysis of H₂/CH₄ microwave plasma and fast growth rate of diamond single crystal［J］. Journal of Applied Physics， 2014， 115（23）： 233301.
[25]	LIANG Q， CHIN C Y， LAI J， et al. Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures［J］. Applied Physics Letters， 2009， 94（2）： 024103.
[26]	ACHARD J， TALLAIRE A， SUSSMANN R， et al. The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD［J］. Journal of Crystal Growth， 2005， 284（3/4）： 396-405.
[27]	TANG C J， NEVES A J， FERNANDES A J S. Study the effect of O₂ addition on hydrogen incorporation in CVD diamond［J］. Diamond and Related Materials， 2004， 13（1）： 203-208.
[28]	ZHAO W K， TENG Y， TANG K， et al. An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality， high-speed， and high-efficiency diamond growth［J］. Journal of Physics D： Applied Physics， 2023， 56（37）： 375104.
[29]	MOKUNO Y， CHAYAHARA A， SODA Y， et al. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD［J］. Diamond and Related Materials， 2005， 14（11/12）： 1743-1746.
[30]	MOKUNO Y， CHAYAHARA A， YAMADA H， et al. Improving purity and size of single-crystal diamond plates produced by high-rate CVD growth and lift-off process using ion implantation［J］. Diamond and Related Materials， 2009， 18（10）： 1258-1261.
[31]	YAMADA H， CHAYAHARA A， MOKUNO Y， et al. A 2-in. mosaic wafer made of a single-crystal diamond［J］. Applied Physics Letters， 2014， 104（10）： 102110.
[32]	CHEN L H， CHEN C Y， LEE Y L. Nucleation and growth of clusters in the process of vapor deposition［J］. Surface Science， 1999， 429（1/2/3）： 150-160.
[33]	MANDAL S. Nucleation of diamond films on heterogeneous substrates： a review［J］. RSC Advances， 2021， 11（17）： 10159-10182.
[34]	王伟华. 金刚石异质外延形核生长关键技术与机理研究［D］. 哈尔滨：哈尔滨工业大学， 2023.
	WANG W H. Key technology and mechanism of heteroepitaxial diamond nucleation and growth［D］. Harbin： Harbin Institute of Technology， 2023 （in Chinese）.
[35]	YUGO S， NAKAMURA N， KIMURA T. Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition［J］. Diamond and Related Materials， 1998， 7（7）： 1017-1020.
[36]	SCHRECK M， GSELL S， BRESCIA R， et al. Ion bombardment induced buried lateral growth： the key mechanism for the synthesis of single crystal diamond wafers［J］. Scientific Reports， 2017， 7： 44462.
[37]	KIM S W， KAWAMATA Y， TAKAYA R， et al. Growth of high-quality one-inch free-standing heteroepitaxial （001） diamond on （1120） sapphire substrate［J］. Applied Physics Letters， 2020， 117（20）： 202102.
[38]	KIM S W， TAKAYA R， HIRANO S， et al. Two-inch high-quality （001） diamond heteroepitaxial growth on sapphire （1120） misoriented substrate by step-flow mode［J］. Applied Physics Express， 2021， 14（11）： 115501.
[39]	FEI W X， WEI K T， MORISHITA A， et al. Local initial heteroepitaxial growth of diamond （111） on Ru （0001）/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition［J］. Applied Physics Letters， 2020， 117（11）： 112102.
[40]	QU P F， JIN P， ZHOU G D， et al. Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si （001） substrates via laser-patterned templates［J］. Journal of Semiconductors， 2024， 45（9）： 090501.
[41]	WANG Y， WANG W H， SHU G Y， et al. Virtues of Ir（100） substrate on diamond epitaxial growth： first-principle calculation and XPS study［J］. Journal of Crystal Growth， 2021， 560： 126047.
[42]	WANG W H， YANG S L， LIU B J， et al. Bias process for heteroepitaxial diamond nucleation on Ir substrates［J］. Carbon Letters， 2023， 33（2）： 517-530.
[43]	赵黎昀. 培育钻石市场急速降温价格跌至天然钻石的1/20［N/OL］. 证券时报， 2024-09-06（A06）.
	ZHAO L Y. The rapid cooling of the diamond cultivation market has caused prices to drop to 1/20 of natural diamonds［N/OL］. Securities Times， 2024-09-06（A06）（in Chinese）.
[44]	方啸虎，陈孝洲. 培育大单晶金刚石的现状与未来［J］. 超硬材料工程， 2024， 36（2）： 45-51.
	FANG X H， CHEN X Z. The current situation and future of lab-grown large single crystal diamond［J］. Superhard Material Engineering， 2024， 36（2）： 45-51 （in Chinese）.
[45]	谢楚楚. 天然钻重挫［N/OL］. 经济观察报， 2024-02-05（020）.
	XIE C C. Natural diamonds have suffered heavy setbacks［N/OL］. The Economic Observer， 2024-02-05（020）（in Chinese）.
[46]	中国机床工具工业协会超硬材料分会、河南省超硬材料协会. 培育钻石产业发展白皮书（2024年）［R］. 郑州： 2024.
	Superhard Material （Industrial Diamond） Association of China， Henan Superhard Material （Industrial Diamond） Association. White Paper on Cultivating the Development of Diamond Industry （2024）［R］. Zhengzhou： 2024 （in Chinese）.
[47]	中国金刚石钻行业市场前景预测及投资价值评估分析报告［EB/OL］. （2025-02-07） .
	Market outlook forecast and investment value evaluation analysis report on China's diamond diamond industry［EB/OL］. （2025-02-07）（in Chinese）.
[48]	上海钻石交易所. 中国钻石2024年鉴［R］. 2024： 14-17.
	Shanghai Diamond Exchange. China diamond year book［R］. 2024： 14-17 （in Chinese）.
[49]	王萧. 中国黄金：2023年净利润同比增长27.2%［N/OL］. 中国黄金报， 2024-05-07（007）.
	WANG X. China Gold： net profit in 2023 increased by 27.2% year-on-year［N/OL］. China Gold News， 2024-05-07（007）（in Chinese）.
[50]	兰飞飞，刘莎莎，房诗舒，等. 金刚石基GaN界面热阻控制研究进展［J］. 人工晶体学报， 2024， 53（6）： 913-921.
	LAN F F， LIU S S， FANG S S， et al. Research progress on controlling the thermal boundary resistance of GaN on diamond［J］. Journal of Synthetic Crystals， 2024， 53（6）： 913-921 （in Chinese）.
[51]	KHAN M A， BHATTARAI A， KUZNIA J N， et al. High electron mobility transistor based on a GaN-Al_xGa_1-_xN heterojunction［J］. Applied Physics Letters， 1993， 63（9）： 1214-1215.
[52]	HU X F， GE L， LIU Z H， et al. Diamond-SiC composite substrates： a novel strategy as efficient heat sinks for GaN-based devices［J］. Carbon， 2024， 218： 118755.
[53]	GU L， LI Y， SHEN Y， et al. A strategy for enhancing interfacial thermal transport in Ga₂O₃-diamond composite structure by introducing an AlN interlayer［J］. Nano Energy， 2024， 132： 110389.
[54]	LIANG J B， KOBAYASHI A， SHIMIZU Y， et al. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design［J］. Advanced Materials， 2021， 33（43）： e2104564.
[55]	MATSUMAE T， KURASHIMA Y， TAKAGI H， et al. Room temperature bonding of GaN and diamond substrates via atomic layer［J］. Scripta Materialia， 2022， 215： 114725.
[56]	SANG L W. Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices［J］. Functional Diamond， 2021， 1（1）： 174-188.
[57]	MU F W， HE R， SUGA T. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices［J］. Scripta Materialia， 2018， 150： 148-151.
[58]	MALAKOUTIAN M， FIELD D E， HINES N J， et al. Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling［J］. ACS Applied Materials & Interfaces， 2021， 13（50）： 60553-60560.
[59]	VIA G D， FELBINGER J G， BLEVINS J， et al. Wafer-scale GaN HEMT performance enhancement by diamond substrate integration［J］. Physica Status Solidi C， 2014， 11（3/4）： 871-874.
[60]	EJECKAM F， FRANCIS D， FAILI F， et al. S2-T1： GaN-on-diamond： a brief history［C］//2014 Lester Eastman Conference on High Performance Devices （LEC）. August 5-7， 2014， Ithaca， NY， USA. IEEE， 2014： 1-5.
[61]	SMITH E J W， PIRACHA A H， FIELD D， et al. Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN［J］. Carbon， 2020， 167： 620-626.
[62]	GOVINDARAJU N， SINGH R N. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics［J］. Materials Science and Engineering： B， 2011， 176（14）： 1058-1072.
[63]	YATES L， ANDERSON J， GU X， et al. Low thermal boundary resistance interfaces for GaN-on-diamond devices［J］. ACS Applied Materials & Interfaces， 2018， 10（28）： 24302-24309.
[64]	JIA X， WEI J J， HUANG Y B， et al. Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition［J］. Journal of Materials Science， 2021， 56（11）： 6903-6911.
[65]	WANG Y N， HU X F， GE L， et al. Research progress in capping diamond growth on GaN HEMT： a review［J］. Crystals， 2023， 13（3）： 500.
[66]	JIA X， WEI J J， KONG Y C， et al. The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate［J］. Surface and Interface Analysis， 2019， 51（7）： 783-790.
[67]	MILLAR P， KEMP A J， BURNS D. Power scaling of Nd∶YVO₄ and Nd∶GdVO₄ disk lasers using synthetic diamond as a heat spreader［J］. Optics Letters， 2009， 34（6）： 782-784.
[68]	ICHIKAWA H， YAMAGUCHI K， KATSUMATA T， et al. High-power and highly efficient composite laser with an anti-reflection coated layer between a laser crystal and a diamond heat spreader fabricated by room-temperature bonding［J］. Optics Express， 2017， 25（19）： 22797-22804.
[69]	ZHANG S L， ZHAO C C， ZHU Y， et al. Heteroepitaxial growth of diamond films on Y₃Al₅O₁₂ single crystals［J］. Materials Chemistry and Physics， 2021， 273： 125152.
[70]	ZHANG H D， ZHANG J J， LIU Y， et al. Unveiling the interfacial configuration in diamond/Cu composites by using statistical analysis of metallized diamond surface［J］. Scripta Materialia， 2018， 152： 84-88.
[71]	XUE Y H， LI R， DENG Y R， et al. Research progress in interface optimization and preparation technology of high thermal conductivity diamond/copper composite materials［J］. Frontiers in Materials， 2025， 12： 1582990.
[72]	BAI H， MA N G， LANG J， et al. Effect of a new pretreatment on the microstructure and thermal conductivity of Cu/diamond composites［J］. Journal of Alloys and Compounds， 2013， 580： 382-385.
[73]	PAN Y P， HE X B， REN S B， et al. Optimized thermal conductivity of diamond/Cu composite prepared with tungsten-copper-coated diamond particles by vacuum sintering technique［J］. Vacuum， 2018， 153： 74-81.
[74]	WEBER L， TAVANGAR R. On the influence of active element content on the thermal conductivity and thermal expansion of Cu-X （X=Cr， B） diamond composites［J］. Scripta Materialia， 2007， 57（11）： 988-991.
[75]	BAI G Z， WANG L H， ZHANG Y J， et al. Tailoring interface structure and enhancing thermal conductivity of Cu/diamond composites by alloying boron to the Cu matrix［J］. Materials Characterization， 2019， 152： 265-275.
[76]	ZHANG Y J， BAI G Z， LIU X Y， et al. Reinforcement size effect on thermal conductivity in Cu-B/diamond composite［J］. Journal of Materials Science & Technology， 2021， 91： 1-4.
[77]	HAO J P， ZHANG Y J， LI N， et al. Synergetic effect enabling high thermal conductivity in Cu/diamond composite［J］. Diamond and Related Materials， 2023， 138： 110213.
[78]	BREEZE J D， SALVADORI E， SATHIAN J， et al. Continuous-wave room-temperature diamond maser［J］. Nature， 2018， 555（7697）： 493-496.
[79]	姜　杰. 高性能的类金刚石红外光学薄膜［J］. 红外技术， 1996， 18（4）： 15-20.
	JIANG J. High quality IR material-diamond-like carbon film［J］. Infrared Technology， 1996， 18（4）： 15-20 （in Chinese）.
[80]	ZAITSEV A M. Optical properties of diamond： a data handbook［J］. Springer Science & Business Media， 2013.
[81]	ZHU T， ZHANG W L， ZHU Y， et al. Fabrication， microstructure and optical properties of a 30 × 30 × 1 mm³-sized mosaic single crystal diamond for IR window［J］. Diamond and Related Materials， 2025， 160： 113067.
[82]	SOLIN S A， RAMDAS A K. Raman spectrum of diamond［J］. Physical Review B， 1970， 1（4）： 1687-1698.
[83]	GRIMSDITCH M H， RAMDAS A K. Brillouin scattering in diamond［J］. Physical Review B， 1975， 11（8）： 3139-3148.
[84]	YAN Y P， YANG X Z， LI M Y， et al. Experimental investigation on the effect of crystal birefringence on the performance of nanosecond-pulsed diamond Raman laser［J］. Functional Diamond， 2025， 5（1）： 2446198.
[85]	LIU Y X， ZHU C J， SUN Y X， et al. High-power free-running single-longitudinal-mode diamond Raman laser enabled by suppressing parasitic stimulated Brillouin scattering［J］. High Power Laser Science and Engineering， 2023， 11： e72.
[86]	CHEN H， CUI Y F， LI X W， et al. High-power dual-wavelength intracavity diamond Raman laser［J］. Functional Diamond， 2023， 3（1）： 2282527.
[87]	JIN D， BAI Z X， ZHAO Z A， et al. Linewidth narrowing in free-space running diamond Brillouin lasers［J］. High Power Laser Science and Engineering， 2023： 1-16.
[88]	YANG X Z， BAI Z X， CHEN D J， et al. Widely-tunable single-frequency diamond Raman laser［J］. Optics Express， 2021， 29（18）： 29449-29457.
[89]	MI X B， MA H J， HE J R， et al. Q-switched sub-nanosecond high-peak-power eye-safe intracavity cascaded diamond Raman laser［J］. Optics & Laser Technology， 2025， 187： 112843.
[90]	TURNER S， IDRISSI H， SARTORI A F， et al. Direct imaging of boron segregation at dislocations in B： diamond heteroepitaxial films［J］. Nanoscale， 2016， 8（4）： 2212-2218.
[91]	ICHIKAWA K， SHIMAOKA T， KATO Y， et al. Dislocations in chemical vapor deposition diamond layer detected by confocal Raman imaging［J］. Journal of Applied Physics， 2020， 128（15）： 155302.
[92]	GONZÁLEZ-MAÑAS M， VALLEJO B. Misfit dislocations between boron-doped homoepitaxial films and diamond substrates studied by X-ray diffraction topography［J］. Journal of Applied Crystallography， 2018， 51（6）： 1684-1690.
[93]	李成明，周　闯，刘　鹏，等. CVD金刚石膜应力的产生、抑制、应用及测量［J］. 无机材料学报， 2025， 40（11）： 1188-1200.
	LI C M， ZHOU C， LIU P， et al. Stress in CVD diamond films： generation， suppression， application， and measurement［J］. Journal of Inorganic Materials， 2025， 40（11）： 1188-1200 （in Chinese）.
[94]	XIA J Q， ZHANG S L， ZHU Y， et al. Impact of tungsten doping on the physicochemical properties of boron-doped diamond electrodes［J］. Surfaces and Interfaces， 2025， 73： 107485.
[95]	TALLAIRE A， ACHARD J， SILVA F， et al. Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition［J］. Physica Status Solidi （a）， 2004， 201（11）： 2419-2424.
[96]	LI D S， WANG Q L， LV X Y， et al. Reduction of dislocation density in single crystal diamond by Ni-assisted selective etching and CVD regrowth［J］. Journal of Alloys and Compounds， 2023， 960： 170890.
[97]	MENG Y F， YAN C S， LAI J， et al. Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing［J］. Proceedings of the National Academy of Sciences of the United States of America， 2008， 105（46）： 17620-17625.
[98]	ZHANG S L， YE Z H， ZHU Y， et al. Enhanced optical properties of CVD diamond through HPHT annealing［J］. Crystal Growth & Design， 2024， 24（16）： 6701-6709.
[99]	EINAGA Y. Boron-doped diamond electrodes： fundamentals for electrochemical applications［J］. Accounts of Chemical Research， 2022， 55（24）： 3605-3615.
[100]	TOMINAGA Y， UCHIDA A， HUNGE Y M， et al. Enhanced growth rates of N-type phosphorus-doped polycrystalline diamond via in-liquid microwave plasma CVD［J］. Solid State Sciences， 2024， 155： 107650.
[101]	YU S Y， LIU S T， JIANG X， et al. Recent advances on electrochemistry of diamond related materials［J］. Carbon， 2022， 200： 517-542.
[102]	ZHANG S L， ZHU Y， HE M Z， et al. Unusual electrochemical properties of boron and silicon co-doped diamond electrodes［J］. Surfaces and Interfaces， 2024， 52： 104986.
[103]	KAWANO A， ISHIWATA H， IRIYAMA S， et al. Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition［J］. Physical Review B， 2010， 82（8）： 085318.
[104]	GABRYSCH M， MAJDI S， HALLÉN A， et al. Compensation in boron-doped CVD diamond［J］. Physica Status Solidi （a）， 2008， 205（9）： 2190-2194.
[105]	WALI A， PADHAN R， DIVAN R， et al. Heterogenous integration of boron-doped p-diamond with monolayer n-MoS₂ for PN junctions operating at room temperature［J］. Nano Letters， 2025， 25（42）： 15353-15360.
[106]	IMAMURA K， SEKI Y， UEHARA S， et al. Formation of low-resistance layer in diamond by ultraheavy N⁺ doping by ion implantation beyond the CVD doping limit［J］. Journal of Applied Physics， 2026， 139（7）： 075705.
[107]	ZHANG D L， SUN X， SHEN W， et al. Oxygen-assisted B-N codoping enables shallow BN₂ donors for n-type diamond［J］. Research， 2025， 8： 0994.
[108]	BORMASHOV V S， TERENTIEV S A， BUGA S G， et al. Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique［J］. Diamond and Related Materials， 2017， 75： 78-84.
[109]	ZHAO D， HU C， LIU Z C， et al. Diamond MIP structure Schottky diode with different drift layer thickness［J］. Diamond and Related Materials， 2017， 73： 15-18.
[110]	IMANISHI S， HORIKAWA K， OI N， et al. 3.8 W/mm RF power density for ALD Al₂O₃-based two-dimensional hole gas diamond MOSFET operating at saturation velocity［J］. IEEE Electron Device Letters， 2019， 40（2）： 279-282.
[111]	VERONA C， BENETTI M， CANNATÀ D， et al. Stability of H-terminated diamond MOSFETs with V₂O₅/Al₂O₃ as gate insulator［J］. IEEE Electron Device Letters， 2019， 40（5）： 765-768.
[112]	ZHU X H， BI T， YUAN X L， et al. C-Si interface on SiO₂/（111） diamond p-MOSFETs with high mobility and excellent normally-off operation［J］. Applied Surface Science， 2022， 593： 153368.
[113]	ZHANG S， LIU K， LIU B J， et al. Surface potential pinning study for oxygen terminated IIa diamond［J］. Carbon， 2023， 205： 69-75.
[114]	XIA J Q， GU L X， YE S， et al. Optical and electrical properties of CVD boron-doped diamond following HPHT annealing［J］. Diamond and Related Materials， 2026， 162： 113327.