Abstract: According to multicrystalline silicon ( mc-Si ) ingots cast by one-step directional solidification growth with the pre-purification metallurgical grade silicon feedback, the effect of cooling rate on the minority carrier lifetime of mc-Si ingots can be known. In the study, using a lower cooling rate during growth process of mc-Si ingots, a higher lifetime on the mc-Si ingots can be obtained. But when the cooling rate is low to a certain degree, the minority carrier lifetime of mc-Si ingots reduces. The cause of the phenomenon is analyzed by measuring the curvature radius and the crystal structure of the grown mc-Si ingot. This phenomenon can be used to guide the production applications of metallurgical route with one-step directional solidification growth of mc-Si ingots.

Key words: According to multicrystalline silicon ( mc-Si ) ingots cast by one-step directional solidification growth with the pre-purification metallurgical grade silicon feedback, the effect of cooling rate on the minority carrier lifetime of mc-Si ingots can be known. In the study, using a lower cooling rate during growth process of mc-Si ingots, a higher lifetime on the mc-Si ingots can be obtained. But when the cooling rate is low to a certain degree, the minority carrier lifetime of mc-Si ingots reduces. The cause of the phenomenon is analyzed by measuring the curvature radius and the crystal structure of the grown mc-Si ingot. This phenomenon can be used to guide the production applications of metallurgical route with one-step directional solidification growth of mc-Si ingots.