Abstract: Undoped and Te-doped 4 inch diameter (100) GaSb single crystals in 5-8 kg weight have been grown by using liquid encapsulated Czochralski (LEC) and substrate wafer have been prepared.By optimizing the thermal field, single crystal yield as high as 80; have been achieved.Dislocation etch pit density (EPD) of the wafer is less than 500 cm-2 and its X-ray diffraction rocking curves has a full width at half maximum (FWHM) around 29 arcse, indicating a high lattice perfection.The wafer has good electrical uniformity, benefiting from the flat solid-liquid interface during the single crystal growth process.Epi-ready 4 inch GaSb substrate wafer with good flatness and low surface roughness has been prepared.N type GaSb wafer with good near infrared transmittance has been prepared by controlling the native acceptor concentration and doping concentration.

Key words: Undoped and Te-doped 4 inch diameter (100) GaSb single crystals in 5-8 kg weight have been grown by using liquid encapsulated Czochralski (LEC) and substrate wafer have been prepared.By optimizing the thermal field, single crystal yield as high as 80; have been achieved.Dislocation etch pit density (EPD) of the wafer is less than 500 cm-2 and its X-ray diffraction rocking curves has a full width at half maximum (FWHM) around 29 arcse, indicating a high lattice perfection.The wafer has good electrical uniformity, benefiting from the flat solid-liquid interface during the single crystal growth process.Epi-ready 4 inch GaSb substrate wafer with good flatness and low surface roughness has been prepared.N type GaSb wafer with good near infrared transmittance has been prepared by controlling the native acceptor concentration and doping concentration.