Research Progress of Ultra-Wide Band Gap Semiconductor Ga2O3-Based X-Ray Detectors

Abstract

Abstract: X-ray with its advantages of short wavelength and strong penetration plays an important role in medical imaging, security inspection, scientific research, space communication, and other fields. Semiconductor X-ray detectors can convert X-ray photons into current signals, which have the advantages of easy integration, high spatial resolution, high energy resolution, and fast response speed. High-performance X-ray detectors should have the features of low dark current, high sensitivity, fast response speed, and stable work for a long time. Therefore, the semiconductor materials for preparing X-ray detectors should have the characteristics of high resistivity, few defects, and strong irradiation resistance. Gallium oxide (Ga₂O₃) is one of the new wide band gap semiconductor materials, which has the advantages of ultra-wide band gap, high breakdown field strength, high X-ray absorption coefficient, high thermal stability, and being grown by melting methods. Therefore, Ga₂O₃ is suitable for preparing X-ray detectors. In recent years, X-ray detectors based on Ga₂O₃ have become one of the research hotspots. In this review, the physical properties of Ga₂O₃ semiconductor and its research progress in X-ray detectors are introduced, the influence mechanism of materials and device structure on the performance of X-ray detectors are analyzed, the ideas for the preparation of Ga₂O₃-based X-ray detectors with high performance are provided.

Key words: Ga₂O₃, ultra-wide band gap semiconductor, X-ray detector, semiconductor detector, response speed, sensitivity, single crystal, thin film

CLC Number:

TL816⁺.1

LI Zhiwei, TANG Huili, XU Jun, LIU Bo. Research Progress of Ultra-Wide Band Gap Semiconductor Ga₂O₃-Based X-Ray Detectors[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(3): 523-537.

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Research Progress of Ultra-Wide Band Gap Semiconductor Ga₂O₃-Based X-Ray Detectors

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