残余应力及电场对4H-SiC表面压痕硬度的影响

doi:10.16553/j.cnki.issn1000-985x.2024.0255

摘要/Abstract

摘要： 本文利用研磨加工得到不同表面残余应力状态的4H-SiC样品,采用激光拉曼光谱仪测量样品表面的残余应力,通过显微硬度计测量无电场和有电场时的样品表面压痕硬度。结果发现:与无残余应力相比,在-1.6~0 GPa的残余压应力状态下,样品表面压痕硬度最大升高了9.5%;对样品通入一定电流后,无残余应力样品的表面压痕硬度可下降约6%,有残余应力样品的表面压痕硬度可下降约13%。对-1.6~1.6 GPa不同残余应力状态的4H-SiC表面压痕硬度进行了有限元模拟分析,发现在0~1.6 GPa的残余拉应力最多可以使晶片表面压痕硬度下降5.8%。研究获得了4H-SiC表面残余应力、电场等条件与其压痕硬度的映射关系,为通过调控残余应力和施加电场降低工件表面硬度提供了理论依据。

关键词: 残余应力, 电场, 压痕硬度, 4H-SiC, 有限元模拟, 拉曼光谱

Abstract: The 4H-SiC samples with different surface residual stress states were obtained by lapping. The residual stress on the sample surface was measured by a laser Raman spectrometer, and the indentation hardness of the sample surface without and with electric field was measured by a microhardness tester. The results show that, compared to the state with no residual stress, the sample surface indentation hardness increases by up to 9.5% under a residual stress state ranging from -1.6 GPa to 0 GPa. After a certain current is applied to the sample, the indentation hardness of the sample surface with no residual stress can be reduced by about 6%, and the indentation hardness of the sample surface with residual stress can be reduced by about 13%. The surface indentation hardness of 4H-SiC with different residual stress ranging from -1.6 GPa to 1.6 GPa was simulated by finite element analysis. It is found that the residual tensile stress in the range of 0 GPa to 1.6 GPa can reduce the indentation hardness of the wafer surface by up to 5.8%. The mapping relationship between the residual stress, electric field, and the indentation hardness of 4H-SiC surface is obtained, providing a theoretical basis for reducing the surface hardness of the workpiece by regulating the residual stress and applying an electric field.

Key words: residual stress, electric field, indentation hardness, 4H-SiC, finite element simulation, Raman spectra

中图分类号:

O786
TG115.5

朱兴杰, 章平, 左敦稳. 残余应力及电场对4H-SiC表面压痕硬度的影响[J]. 人工晶体学报, 2025, 54(4): 560-568.

ZHU Xingjie, ZHANG Ping, ZUO Dunwen. Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface[J]. Journal of Synthetic Crystals, 2025, 54(4): 560-568.

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