光学浮区法生长Bi掺杂β-Ga2O3单晶及其光谱性质研究

doi:10.16553/j.cnki.issn1000-985x.2024.0266

摘要/Abstract

摘要： 超宽禁带半导体β-Ga₂O₃因出色的光电特性而成为研究的焦点。元素掺杂对β-Ga₂O₃光谱性质的影响是材料科学领域的一个重要研究方向,具有显著的研究价值和应用前景。本研究通过光学浮区(OFZ)法,在CO₂环境中成功生长出β-Ga₂O₃∶6%Bi单晶,并着重研究Bi掺杂β-Ga₂O₃单晶的光谱性质。利用X射线衍射(XRD)、拉曼光谱、扫描电子显微镜(SEM)结合能量色散X射线光谱(EDS)、X射线光电子能谱(XPS)以透过光谱和荧光光谱等先进的表征技术,对样品的晶体结构、元素组成及光谱性质进行了较全面的测试与分析。实验结果揭示,由于离子半径差异大,Bi离子较难掺入β-Ga₂O₃晶格,掺入的Bi离子主要替代了GaO₆八面体中的Ga离子位置。与非故意掺杂β-Ga₂O₃相比,Bi掺杂β-Ga₂O₃单晶在红外区域的透射率降低,载流子浓度增加;荧光发射光谱强度降低,荧光衰减时间缩短。这些发现不仅深化了对Bi掺杂β-Ga₂O₃单晶光谱性质的理解,而且为该材料在闪烁和辐射探测等领域的应用提供了技术启示。

关键词: Bi掺杂β-Ga₂O₃, 光学浮区法, 晶体生长, 拉曼光谱, 光谱特性, 发射光谱强度, 荧光衰减时间

Abstract: β-Ga₂O₃, a semiconductor with a wide bandgap, has garnered significant attention from researchers owing to its remarkable optoelectronic properties. The exploration of how elemental doping affects the spectral properties of β-Ga₂O₃ constitutes a pivotal research area within materials science, offering substantial research value and promising application prospects. In this study, β-Ga₂O₃∶6%Bi single crystal was successfully synthesized in the CO₂ atmosphere through the utilization of the optical floating zone (OFZ) method. The primary focus of this investigation was to delve into the spectral properties of the Bi-doped β-Ga₂O₃ single crystal. To gain a thorough understanding of the samples, a battery of sophisticated characterization techniques was employed. These included X-ray diffraction (XRD) for analyzing the crystal structure, Raman spectroscopy for probing vibrational modes, scanning electron microscopy (SEM) combined with energy-dispersive X-ray spectroscopy (EDS) for examining surface morphology and elemental composition, X-ray photoelectron spectroscopy (XPS) for determining chemical states, and both transmission and fluorescence spectroscopy for assessing optical properties. The experimental outcomes unveiled that it is difficult for Bi ions to be doped into the β-Ga₂O₃ crystal lattice due to the large difference in ionic radii. The doped Bi ions predominantly occupied the sites of Ga ions within the GaO₆ octahedra. Compared with unintentionally doped β-Ga₂O₃, Bi-doped β-Ga₂O₃ single crystals exhibit a decrease in transmittance in the infrared region and an increase in carrier concentration; the emission spectral intensity is reduced, and the fluorescence decay time is shortened. These groundbreaking discoveries not only enhance our comprehension of the spectral properties of Bi-doped β-Ga₂O₃ single crystals but also offer technical insights for the potential application of this material in diverse fields, including scintillator materials and radiation detection systems.

Key words: Bi-doped β-Ga₂O₃, optical floating zone method, crystal growth, Raman spectroscopy, spectral property, emission spectral intensity, fluorescence decay time

中图分类号:

杨晓龙, 唐慧丽, 张超逸, 孙鹏, 黄林, 陈龙, 徐军, 刘波. 光学浮区法生长Bi掺杂β-Ga₂O₃单晶及其光谱性质研究[J]. 人工晶体学报, 2025, 54(2): 202-211.

YANG Xiaolong, TANG Huili, ZHANG Chaoyi, SUN Peng, HUANG Lin, CHEN Long, XU Jun, LIU Bo. Growth and Spectral Properties of Bi-Doped β-Ga₂O₃ Single Crystal by Optical Floating Zone Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 202-211.

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光学浮区法生长Bi掺杂β-Ga₂O₃单晶及其光谱性质研究

Growth and Spectral Properties of Bi-Doped β-Ga₂O₃ Single Crystal by Optical Floating Zone Method

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