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人工晶体学报 ›› 2025, Vol. 54 ›› Issue (5): 801-808.DOI: 10.16553/j.cnki.issn1000-985x.2024.0319

• 研究论文 • 上一篇    下一篇

加热器结构对轻掺磷超低氧直拉单晶硅氧杂质分布的影响

商润龙1(), 陈亚2, 芮阳1, 王黎光1, 马成1, 伊冉1, 杨少林2()   

  1. 1.宁夏中欣晶圆半导体科技有限公司,宁夏半导体级硅晶圆材料工程技术研究中心,银川 750021
    2.北方民族大学材料科学与工程学院,宁夏硅靶及硅碳负极材料工程技术研究中心,银川 750021
  • 收稿日期:2024-12-20 出版日期:2025-05-15 发布日期:2025-05-28
  • 通信作者: 杨少林,博士,副教授。E-mail:slyang@nun.edu.cn
  • 作者简介:商润龙(1996—),男,甘肃省人,硕士。E-mail:2917466341@qq.com
  • 基金资助:
    2023年银川市科技支撑项目(2023GXHZC02);2024年宁夏回族自治区重点研发计划项目(2024BEE02012)

Effect of Heater Structure on Oxygen Impurities in Lightly Phosphorus-Doped Czochralski Monocrystalline Silicon with Ultra-Low Oxygen Content

SHANG Runlong1(), CHEN Ya2, RUI Yang1, WANG Liguang1, MA Cheng1, YI Ran1, YANG Shaolin2()   

  1. 1. Ningxia Research Center of Semiconductor-grade Silicon Wafer Materials Engineering Technology,Ferrotec (Ningxia) Semiconductor Co. ,Ltd. ,Yinchuan 750021,China
    2. Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China
  • Received:2024-12-20 Online:2025-05-15 Published:2025-05-28

摘要: 绝缘栅双极晶体管(IGBT)是能源转换与传输的核心器件,广泛应用于轨道交通、智能电网、航空航天及电动汽车等领域。作为IGBT芯片的衬底材料,轻掺磷超低氧硅晶圆的品质对IGBT芯片的性能起着至关重要的作用。由于直拉(Czochralski, Cz)单晶硅拉制的过程中需要用到含氧的石英坩埚,生长的单晶硅氧含量通常达到4×1017~9×1017 atoms/cm3,远高于IGBT用硅片所需的小于2.5×1017 atoms/cm3的氧含量需求。为解决上述问题,本文通过对应用32英寸(1英寸=2.54 cm)热场的单晶硅生长进行数值模拟,设计出新式加热器来制备满足IGBT衬底需求的超低氧单晶硅棒。模拟结果显示,当采用分体式加热器时,石英坩埚壁和固液界面附近硅熔体的流速会减弱。这一现象有助于减少熔体中的氧含量及氧杂质向固液界面的传输,进而有效降低晶棒中整体的氧含量。此外,由于采用了分体式加热器,固液界面处晶棒的轴向温度梯度相较于常规加热器显著降低,这一优势也有利于减少硅棒中的氧含量。实验结果进一步证实了模拟结果,在分体式加热器下拉制的单晶硅棒的氧含量更低,且整体保持在2.5×1017 atoms/cm3以下,完全符合IGBT衬底的要求。

关键词: Cz法; 超低氧单晶硅; 分体式加热器; 氧含量

Abstract: Insulated gate bipolar transistor (IGBT) is a core device for energy conversion and transmission, which widely used in rail transportation, smart grid, aerospace, electric vehicles and other fields. As the substrate material for IGBT chips, the quality of lightly phosphorus-doped silicon wafers with ultra-low oxygen content plays a crucial role in the performance of IGBT chips. Due to the use of oxygen-containing quartz crucibles during the Czochralski (CZ) method for monocrystalline silicon growth, the oxygen content of the obtained silicon is typically 4×1017~9×1017 atoms/cm3, which is much higher than the oxygen content of less than 2.5×1017 atoms/cm3 required for IGBT silicon wafers. To solve the above problems, this article presents a numerical simulation of monocrystalline silicon growth using a 32 inch hot zone, and designs a new heater to produce ultra-low oxygen monocrystalline silicon ingots that meet the requirements of IGBT substrates. The simulation results show that the flow rate of silicon melt near the quartz crucible wall and solid-liquid interface decreases when using a split heater. This phenomenon is beneficial to reduce the oxygen content in the melt and the transport of oxygen impurities to the solid-liquid interface, thereby effectively reducing the overall oxygen content of the crystal rod. In addition, due to the use of a split heater, the axial temperature gradient of the crystal rod at solid-liquid interface is significantly reduced compared to conventional heaters, which is also beneficial to reduce the oxygen content in the silicon rod. The experimental results further confirmed the simulation results. The oxygen content of the monocrystalline silicon rod produced under the split heater is much lower and remains below 2.5×1017 atoms/cm3 throughout, fully meeting the requirements for IGBT substrates.

Key words: Cz method; monocrystalline silicon with ultra-low oxygen content; split heater; oxygen content

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