人工晶体学报 ›› 2021, Vol. 50 ›› Issue (2): 381-390.
胡雪莹1, 董海亮1, 贾志刚1, 张爱琴2, 梁建3, 许并社1,4
收稿日期:
2020-11-17
发布日期:
2021-03-24
通讯作者:
董海亮,博士,高级实验师。E-mail:dhltyut@163.com;许并社,博士,教授。E-mail:xubs@tyut.edu.cn
作者简介:
胡雪莹(1997—),女,河北省人,硕士研究生。E-mail:huxueying0957@link.tyut.edu.cn
基金资助:
HU Xueying1, DONG Hailiang1, JIA Zhigang1, ZHANG Aiqin2, LIANG Jian3, XU Bingshe1,4
Received:
2020-11-17
Published:
2021-03-24
摘要: GaAs基980 nm半导体激光器在材料加工、通信和医疗等领域有着重要应用。应变量子阱结构的出现提高了GaAs基半导体激光器的转换效率、输出功率和可靠性。本文综述了高功率GaAs基量子阱激光器历史发展,介绍了高功率半导体激光器的外延结构、芯片结构和封装结构设计,重点阐述了影响高功率GaAs基量子阱激光器光电性能、散热和实际应用的问题。针对以上问题讨论了相应解决方案及研究成果,并指出了各个方案的不足之处和改进方向。最后,总结了高功率半导体激光器的发展现状,对高功率半导体激光器发展方向进行了展望。
中图分类号:
胡雪莹, 董海亮, 贾志刚, 张爱琴, 梁建, 许并社. GaAs基980 nm高功率半导体激光器的研究进展[J]. 人工晶体学报, 2021, 50(2): 381-390.
HU Xueying, DONG Hailiang, JIA Zhigang, ZHANG Aiqin, LIANG Jian, XU Bingshe. Research Progress of GaAs Based 980 nm High Power Semiconductor Lasers[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(2): 381-390.
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