n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (3): 484-490.

n-In_0.35Ga_0.65N/p-Si异质结的制备及其电学性能研究

王婷, 赵红莉, 郭世伟, 姚娟, 李爽, 符跃春, 沈晓明, 何欢

广西大学资源环境与材料学院,有色金属及材料加工新技术教育部重点实验室,广西有色金属及特色材料加工重点实验室,广西生态型铝产业协同创新中心,南宁 530004

收稿日期:2021-01-04 出版日期:2021-03-15 发布日期:2021-04-15
通讯作者: 何欢,博士,副教授。E-mail:noblehe@gxu.edu.cn
作者简介:王婷(1992—),女,四川省人,硕士研究生。E-mail:wangting1034@163.com
基金资助:
国家自然科学基金(61474030); 广西自然科学基金(2015GXNSFAA139265); 中国科学院重点实验室开放基金(15ZS06); 广西科学研究与技术开发科技攻关计划(1598008-15); 南宁市科学研究与技术开发科技攻关计划(20151268)

Preparation and Electrical Properties of n-In_0.35Ga_0.65N/p-Si Heterojunction

WANG Ting, ZHAO Hongli, GUO Shiwei, YAO Juan, LI Shuang, FU Yuechun, SHEN Xiaoming, HE Huan

Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

Received:2021-01-04 Online:2021-03-15 Published:2021-04-15

摘要/Abstract

摘要： 采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。

关键词: 脉冲激光沉积, n-In_0.35Ga_0.65N/p-Si异质结, InGaN薄膜, 整流特性, 半导体

Abstract: InGaN film was deposited on p-Si substrate using a self-refited pulsed laser deposition (PLD) system with double laser light paths and two-component target. The microstructure of InGaN film and the electrical properties of n-InGaN/p-Si heterojunction were investigated. The results show that InGaN film exhibits a single crystal structure with [0001] preferred orientation.The surface of the film is smooth and dense, and the atomic content of In is 35%. The Hall effect measurements show that In_0.35Ga_0.65N film exhibits n-type characteristics with high carrier concentration, high mobility and low resistivity. The current-voltage (I-V) analysis shows that n-In_0.35Ga_0.65N/p-Si heterojunction has good rectification characteristics with the rectification ratio of 25 at ±4 V, and the open circuit voltage is 1.32 V. There exists two current transport mechanisms in n-In_0.35Ga_0.65N/p-Si heterojunction: thermally assisted carrier tunneling and recombination-tunneling mechanism. In addition, the reverse saturation current, barrier height and ideality factor of the heterojunction are 1.05×10^-8A, 0.86 eV, and 6.87, respectively.

Key words: pulsed laser deposition, n-In_0.35Ga_0.65N/p-Si heterojunction, InGaN film, rectification characteristic, semiconductor

中图分类号:

TN36

王婷, 赵红莉, 郭世伟, 姚娟, 李爽, 符跃春, 沈晓明, 何欢. n-In_0.35Ga_0.65N/p-Si异质结的制备及其电学性能研究[J]. 人工晶体学报, 2021, 50(3): 484-490.

WANG Ting, ZHAO Hongli, GUO Shiwei, YAO Juan, LI Shuang, FU Yuechun, SHEN Xiaoming, HE Huan. Preparation and Electrical Properties of n-In_0.35Ga_0.65N/p-Si Heterojunction[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(3): 484-490.

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