AlGaN基深紫外LED的外延生长及光电性能研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (7): 1158-1162.

AlGaN基深紫外LED的外延生长及光电性能研究

李路^1,2, 徐俞³, 曹冰^1,2, 徐科³

1.苏州大学光电科学与工程学院,苏州 215006;
2.江苏省先进光学制造技术重点实验室和教育部现代光学技术重点实验室,苏州 215006;
3.中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123

收稿日期:2022-03-15 出版日期:2022-07-15 发布日期:2022-08-11
通讯作者: 徐俞,博士,副研究员。E-mail:yxu2007@sinano.ac.cn曹冰,博士,教授。E-mail:bingcao@suda.edu.cn
作者简介:李路(1997—),女,河南省人,硕士研究生。E-mail:20194239014@suda.edu.cn
基金资助:
国家自然科学基金重点项目(61734008,62174173);江苏省重点研发计划(BE2021008-3)

Epitaxial Growth and Optoelectronic Properties of AlGaN-Based Deep-Ultraviolet LED

LI Lu^1,2, XU Yu³, CAO Bing^1,2, XU Ke³

1. School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, China;
2. Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou 215006, China;
3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy Sciences, Suzhou 215123, China

Received:2022-03-15 Online:2022-07-15 Published:2022-08-11

摘要/Abstract

摘要： AlGaN基材料作为带隙可调的直接带隙宽禁带半导体材料,是制备紫外光电子器件的理想材料。在无法获得大尺寸、低成本的同质衬底的情况下,高质量AlN薄膜的异质外延是促进紫外光电子器件发展的关键。本文中,通过调节蓝宝石衬底上AlN的金属有机物化学气相沉积(MOCVD)生长模式产生高密度纳米级孔洞,利用纳米级孔洞降低AlN的位错,并在此基础上外延了AlGaN量子阱结构,得到了275 nm波段的深紫外LED薄膜,并制备了开启电压约为4.8 V,反向漏电电流仅为2.23 μA(-3.0 V电压时)的深紫外LED器件。

关键词: AlN薄膜, AlGaN材料, 紫外LED, 异质外延, 纳米级孔洞

Abstract: AlGaN-based materials are ideal for the preparation of ultraviolet (UV) optoelectronic devices as tunable, direct and wide band gap semiconductor materials. In the absence of access to large-size, low-cost homogeneous substrates, heterogeneous epitaxy of high-quality AlN films is the key to facilitate the development of UV optoelectronic devices. In this work, the metal organic chemical vapor deposition (MOCVD) growth pattern of AlN on sapphire substrates was adjusted to generate high density nanoscale holes, and the holes were used to reduce the dislocations of AlN. Based on this, the AlGaN quantum well structure was epitaxially developed. Deep-UV LED films in the 275 nm band were obtained by epitaxy, and a deep-UV LED device with an on voltage of 4.8V and a reverse leakage current of 2.23 μA (at -3.0 V voltage) was fabricated.

Key words: AlN thin film, AlGaN material, ultraviolet LED, heterogeneous epitaxy, nanoscale hole

中图分类号:

TN321.8
TN23

李路, 徐俞, 曹冰, 徐科. AlGaN基深紫外LED的外延生长及光电性能研究[J]. 人工晶体学报, 2022, 51(7): 1158-1162.

LI Lu, XU Yu, CAO Bing, XU Ke. Epitaxial Growth and Optoelectronic Properties of AlGaN-Based Deep-Ultraviolet LED[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(7): 1158-1162.

参考文献

[1] MEI Y, WENG G E, ZHANG B P, et al. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’[J]. Light: Science & Applications, 2017, 6(1): e16199.
[2] SUN Y, ZHOU K, FENG M X, et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si[J]. Light: Science & Applications, 2018, 7: 13.
[3] BAO G H, LI D B, SUN X J, et al. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles[J]. Optics Express, 2014, 22(20): 24286.
[4] ZHAO Y M, DONALDSON W R. Ultrafast UV AlGaN metal-semiconductor-metal photodetector with a response time below 25 ps[J]. IEEE Journal of Quantum Electronics, 2020, 56(3): 1-7.
[5] LIU X K, GU H, LI K L, et al. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer[J]. AIP Advances, 2017, 7(9): 095305.
[6] CHEN D B, LIU Z K, LIANG J H, et al. A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage[J]. Journal of Materials Chemistry C, 2019, 7(39): 12075-12079.
[7] WANG Y, LI Z Y, HAO Y, et al. Evaluation by simulation of AlGaN/GaN Schottky barrier diode (SBD) with anode-via vertical field plate structure[J]. IEEE Transactions on Electron Devices, 2018, 65(6): 2552-2557.
[8] WANG J, GU Z Q, LIU X S, et al. An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors[J]. The Analyst, 2020, 145(7): 2725-2730.
[9] LI D B, JIANG K, SUN X J, et al. AlGaN photonics: recent advances in materials and ultraviolet devices[J]. Advances in Optics and Photonics, 2018, 10(1): 43.
[10] KNEISSL M, SEONG T Y, HAN J, et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies[J]. Nature Photonics, 2019, 13(4): 233-244.
[11] 徐明升,胡小波,徐现刚.AlGaN成核层对SiC衬底外延GaN薄膜应力及缺陷影响的研究[J].人工晶体学报,2014,43(6):1346-1350.
XU M S, HU X B, XU X G. Effect of AlGaN nucleation layer on the stress and dislocation of the GaN film grown on SiC substrate[J]. Journal of Synthetic Crystals, 2014, 43(6): 1346-1350(in Chinese).
[12] 贲建伟,孙晓娟,蒋科,等.AlGaN基宽禁带半导体光电材料与器件[J].人工晶体学报,2020,49(11):2046-2067.
BEN J W, SUN X J, JIANG K, et al. AlGaN based wide bandgap photoelectric materials and devices[J]. Journal of Synthetic Crystals, 2020, 49(11): 2046-2067(in Chinese).
[13] OZEKI M, MOCHIZUKI K, OHTSUKA N, et al. New approach to the atomic layer epitaxy of GaAs using a fast gas stream[J]. Applied Physics Letters, 1988, 53(16): 1509-1511.
[14] BANAL R G, FUNATO M, KAWAKAMI Y. Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy[J]. Physica Status Solidi C, 2010, 7(7/8): 2111-2114.
[15] MIYAKE H, NISHIO G, SUZUKI S, et al. Annealing of an AlN buffer layer in N₂-CO for growth of a high-quality AlN film on sapphire[J]. Applied Physics Express, 2016, 9(2): 025501.
[16] ZHANG L S, XU F J, WANG J M, et al. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography[J]. Scientific Reports, 2016, 6: 35934.
[17] LIU X H, ZHANG J C, SU X J, et al. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method[J]. Applied Physics Express, 2016, 9(4): 045501.
[18] HE C G, ZHAO W, WU H L, et al. High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification[J]. Crystal Growth & Design, 2018, 18(11): 6816-6823.
[19] CONROY M, ZUBIALEVICH V Z, LI H N, et al. Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods[J]. Journal of Materials Chemistry C, 2015, 3(2): 431-437.
[20] ZHAO E, XU Y, CAO B, et al. Microstructural and optical properties of GaN buffer layers grown on graphene[J]. Japanese Journal of Applied Physics, 2018, 57(8): 085502.
[21] DONG P, YAN J C, WANG J X, et al. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates[J]. Applied Physics Letters, 2013, 102(24): 241113.