基于AlN的体声波滤波器材料、器件与应用研究进展

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1691-1702.

基于AlN的体声波滤波器材料、器件与应用研究进展

欧阳佩东¹, 衣新燕^1,2, 罗添友¹, 王文樑¹, 李国强^1,2

1.华南理工大学材料科学与工程学院,广州 510641;
2.广州市艾佛光通科技有限公司,广州 510700

收稿日期:2022-05-24 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 李国强,博士,教授。E-mail:msgli@scut.edu.cn
作者简介:欧阳佩东(1991— ),男,湖南省人,博士研究生。E-mail:msoypd@mail.scut.edu.cn。
李国强,博士,华南理工大学发光材料与器件国家重点实验室教授,博士生导师,“万人计划”科技创新领军人才、教育部重要人才计划入选者、国家优秀青年科学基金获得者。长期致力于第三代半导体材料与器件、宽带通信核心元器件方面的研究,发展我国具有独立知识产权的高性能半导体材料与器件核心技术,解决我国该领域的“卡脖子”技术问题。近五年主持国家重点研发计划项目、国家重大科研仪器研制项目课题、广东省重点领域研发计划项目等国家和省部级项目10余项;在Adv Mater、Adv Funct Mater、Rep Prog Phys等发表高水平学术论文100余篇,SCI他引5 000余次;研究成果获2021年广东省丁颖科技奖、2020年中国有色金属工业科学技术奖一等奖(第一)、2019广东省技术发明奖一等奖(第一)。
基金资助:
广东省重点领域研发计划(2019B010129001)

Research Progress of AlN-Based Filters: Materials, Devices and Applications

OUYANG Peidong¹, YI Xinyan^1,2, LUO Tianyou¹, WANG Wenliang¹, LI Guoqiang^1,2

1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China;
2. Guangzhou Aifo Light Communication Technology Co., Ltd., Guangzhou 510700, China

Received:2022-05-24 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： 在5G通信时代,体声波(BAW)滤波器件成为实现高性能射频(RF)滤波的有效解决方案。在当前BAW器件发展最成熟的薄膜体声波谐振器(FBAR)技术和专利被少数几家公司持有的大环境下,对压电薄膜生长、器件的制备工艺等方面进行突破,形成独有的BAW器件技术路线显得尤为重要。本文综述了AlN薄膜的生长、AlN材料在BAW滤波器件的发展、基于AlN的BAW器件的制备及其应用。在国内研究者的努力下,基于单晶AlN的体声波谐振器(SABAR)器件,通过在材料生长方法及制备工艺上的独立自主创新,不仅使BAW滤波器件的性能得到了进一步提升,也给受到国外掣肘的国内射频滤波行业带来了一条摆脱国外“卡脖子”问题的新路线。

关键词: AlN薄膜, 体声波滤波器, 材料生长, 设备制造, 单晶AlN的体声波谐振器

Abstract: In the era of 5G communication, bulk acoustic wave (BAW) filters have become an effective solution to achieve high-performance radio frequency (RF) filtering. In the current environment where film bulk acoustic resonator (FBAR) technology (the most mature BAW technology) and patents are held by a few companies, it is essential to make breakthroughs in piezoelectric film growth and device preparation, to form a unique BAW device technology route. This paper reviews the AlN thin film growth, the development of AlN in BAW filter devices, and the preparation and application of AlN-based BAW devices. With the efforts of domestic researchers, the single-crystalline AlN bulk acoustic resonator (SABAR) device has further improved the performance of BAW devices through independent innovation in the material growth method and preparation process. Moreover, it also brought a new route to eliminate the “neck sticking” problem to the RF filter industry constrained by foreign countries.

Key words: AlN thin film, bulk acoustic filter, material growth, device manufacturing, single-crystalline AlN bulk acoustic resonator

中图分类号:

O484
TN713

欧阳佩东, 衣新燕, 罗添友, 王文樑, 李国强. 基于AlN的体声波滤波器材料、器件与应用研究进展[J]. 人工晶体学报, 2022, 51(9-10): 1691-1702.

OUYANG Peidong, YI Xinyan, LUO Tianyou, WANG Wenliang, LI Guoqiang. Research Progress of AlN-Based Filters: Materials, Devices and Applications[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1691-1702.

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