物理气相传输法合成AlN单晶性能表征

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (12): 2196-2202.

物理气相传输法合成AlN单晶性能表征

周振翔^1,2, 陈宁³, 李丹^1,2, 石爽爽^1,2, 倪代秦^1,2, 陈建荣^1,2, 黄存新^1,2, 李荣臻⁴, 魏华阳⁴

1.北京中材人工晶体研究院有限公司,北京 100018;
2.中材人工晶体研究院有限公司,北京 100018;
3.宁波大学物理科学与技术学院,高压物理科学研究院,宁波 315211;
4.中材人工晶体研究院(山东)有限公司,济南 250200

收稿日期:2023-09-25 出版日期:2023-12-15 发布日期:2023-12-26
作者简介:周振翔(1985—),男,山东省人,博士,高级工程师。E-mail:zzx_0826@163.com
基金资助:
国家重点研发计划(2022YFB3605300)

Characterization of AlN Single Crystal Synthesized by the Physical Vapor Transport Method

ZHOU Zhenxiang^1,2, CHEN Ning³, LI Dan^1,2, SHI Shuangshuang^1,2, NI Daiqin^1,2, CHEN Jianrong^1,2, HUANG Cunxin^1,2, LI Rongzhen⁴, WEI Huayang⁴

1. Beijing Sinoma Snythetic Crystals Co., Ltd., Beijing 100018, China;
2. Sinoma Snythetic Crystals Co. Ltd., Beijing 100018, China;
3. Institute of High Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China;
4. Sinoma Synthetic Crystals (Shandong) Co., Ltd., Jinan 250200, China

Received:2023-09-25 Online:2023-12-15 Published:2023-12-26

摘要/Abstract

摘要： 采用物理气相传输(PVT)法通过同质外延生长获得14 mm×12 mm的AlN单晶样品。对样品进行切割、研磨、化学机械抛光处理后,采用拉曼光谱仪、高分辨X射线衍射仪、X射线光电子能谱仪、光致发光光谱仪对样品进行测试表征。拉曼测试结果表明,晶体中心区域的拉曼光谱E₂(high)声子模的半峰全宽为3.3 cm^-1,边缘区域E₂(high)声子模的半峰全宽为4.3 cm^-1,晶体呈现较高的结晶质量。XRD摇摆曲线表征结果显示,外延生长后的晶体中心和边缘区域的摇摆曲线半峰全宽增大至100″和205″,表明晶体内存在缺陷。XPS测试结果表明,晶体内存在C、O、Si杂质元素,杂质的原子数分数分别为0.74%、1.43%、2.14%,晶体内发现以氧杂质为主的Al—O、N—Al—O等特征峰。光致发光光谱测试结果显示,晶体内存在V_Al-O_N复合缺陷和V_Al点缺陷。

关键词: 氮化铝, 物理气相传输法, 半峰全宽, 杂质, 缺陷

Abstract: The 14 mm×12 mm AlN single crystal is synthesized by the homoepitaxial physical vapor transport method. The crystal sample sliced from the boule is processed by lapping and chemical mechanical processes (CMP). The sample is characterized by Raman spectrometer, high resolution X-ray diffractometer, X-ray photoelectron spectrometer and photoluminescence spectrometer. The Raman results show that the full width at half maximum (FWHM) of the E₂ (high) phonon mode of Raman spectrum is 3.3 cm^-1 in the central region of the sample, and the FWHM of the E₂ (high) phonon mode of Raman spectrum is 4.3 cm^-1 in the edge of the sample, the AlN single crystal exhibits high crystal quality. The FWHM of the X-ray rocking curve increase to 100″ in the central region of the homoepitaxial growth crystal, while the FWHM of the X-ray rocking curve is 205″ in the edge region of the homoepitaxial growth crystal, which indicates defects exist in the crystal. XPS results show that there are C, O, Si impurity elements in the crystal, and the atomic concentration of the impurities is 0.74%, 1.43% and 2.14%, respectively. It is found that the mainly oxygen impurities exist in the crystal in the form of Al—O, N—Al—O bonding. PL spectra show that crystal contains V_Al-O_N compound defect and V_Al point defect.

Key words: AlN, physical vapor transport method, FWHM, impurity, defect

中图分类号:

O78
O731

周振翔, 陈宁, 李丹, 石爽爽, 倪代秦, 陈建荣, 黄存新, 李荣臻, 魏华阳. 物理气相传输法合成AlN单晶性能表征[J]. 人工晶体学报, 2023, 52(12): 2196-2202.

ZHOU Zhenxiang, CHEN Ning, LI Dan, SHI Shuangshuang, NI Daiqin, CHEN Jianrong, HUANG Cunxin, LI Rongzhen, WEI Huayang. Characterization of AlN Single Crystal Synthesized by the Physical Vapor Transport Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(12): 2196-2202.

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