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人工晶体学报 ›› 2023, Vol. 52 ›› Issue (6): 960-981.

所属专题: 半导体薄膜与外延技术

• 光电子薄膜 • 上一篇    下一篇

确定性固态量子光源基础材料与器件

赵军一1,2, 刘润泽1,2, 楼逸扬1,2, 霍永恒1,2,3   

  1. 1.中国科学技术大学,合肥微尺度物质科学国家研究中心& 物理学院,合肥 230026;
    2.中国科学技术大学,上海量子科学研究中心& 中国科学院量子信息与量子物理创新研究院,上海 201315;
    3.中国科学技术大学,合肥国家实验室,合肥 230088
  • 收稿日期:2023-04-09 出版日期:2023-06-15 发布日期:2023-06-30
  • 通信作者: 霍永恒,博士,教授。E-mail:yongheng@ustc.edu.cn
  • 作者简介:赵军一(1998—),男,安徽省人,博士研究生。E-mail:junyi98@mail.ustc.edu.cn
  • 基金资助:
    科技创新2030重大项目(2021ZD0300204);上海市市级科技重大专项(2019SHZDZX01-ZX06);国家自然科学基金(11774326);国家重点研发计划(2017YFA0304301)

Basic Materials and Devices of the Deterministic Solid-State Quantum Light Sources

ZHAO Junyi1,2, LIU Runze1,2, LOU Yiyang1,2, HUO Yongheng1,2,3   

  1. 1. Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China;
    2. Shanghai Research Center for Quantum Science and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China;
    3. Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
  • Received:2023-04-09 Online:2023-06-15 Published:2023-06-30

摘要: 量子光源是量子通信和光量子计算的基础模块。光子的单光子性保证了通信的无条件安全,光子的高不可分辨性保证了计算方案的复杂度。在各类固态材料候选体系中,基于半导体量子点体系的单光子源和纠缠光子源保持着量子光源品质的最高纪录,展现了巨大的潜力。分子束外延是目前最适合制备固态半导体量子点的生长方法,超高真空、超纯材料、原位监测和生长过程中参数的高度可控等特点使其优势明显。为了实现同时具备高效率、高单光子纯度、高不可分辨性和高纠缠保真度的量子光源,量子点的材料生长、外部调控、钝化技术和测量技术等都需要系统优化提升。本文将综述基于分子束外延生长实现固态量子点体系量子光源的基础材料与器件的研究进展,讨论两种常见量子点的制备原理以及外延生长中各类参数对量子点品质的影响,包括背景真空、源料纯度、衬底温度、生长速率和束流比等。本文随后简介了外部调控、表面钝化、测量技术等手段优化量子光源器件性能的技术细节和实验进展,最后对量子光源在基础科学研究和量子网络构建中取得的进展进行总结,并对其实际应用与发展前景进行展望。

关键词: 确定性固态量子光源, 分子束外延, 半导体量子点, 单光子源, 纠缠光子源, 量子信息技术

Abstract: Quantum light sources are fundamental modules for quantum communication and optical quantum computation. The quality of quantum light sources directly determines the implementation of quantum key distribution and optical quantum computation. For example, the indivisibility of photons ensures the unconditional security of quantum communication, and the indistinguishability of photons ensures the complexity of computing schemes. Among various solid-state candidate systems, single and entangled photon sources based on solid-state semiconductor quantum dots (QDs) have shown great potential compared to their competitors. Molecular beam epitaxy (MBE) is currently the most suitable technique for growing solid-state semiconductor QDs, with advantages of ultra-high vacuum, ultra-pure materials, in-situ monitoring, and highly controllable growth parameters. To achieve quantum light sources with high efficiency, high single-photon purity, high indistinguishability, and high entanglement fidelity simultaneously, the material growth, external field tuning, surface passivation, and optical measurement techniques of QDs need to be systematically optimized and improved. This article reviews the research progress of basic materials and devices of solid-state QDs systems based on MBE growth. Subsequently, this article discusses the mechanisms of the growth of two types of QDs, the influences of various growth parameters on the quality of QDs, including background vacuum, purity of source materials, substrate temperature, growth rate, beam equivalent pressure (BEP) ratio, etc. After that, this article introduces the technical details and experimental progress of optimizing QDs device performance from the perspectives of external field tuning, surface passivation, and improved measurement technology. Finally, the progress of quantum light sources applications in fundamental scientific problems and quantum network constructions are summarized, and prospects for practical applications and future development are discussed in brief.

Key words: deterministic solid-state quantum light source, molecular beam epitaxy, semiconductor quantum dot, single photon source, entangled photon source, quantum information technology

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