[1] RAMÍREZ-MÁRQUEZ C, OTERO M V, VÁZQUEZ-CASTILLO J A, et al. Process design and intensification for the production of solar grade silicon[J]. Journal of Cleaner Production, 2018, 170: 1579-1593. [2] YOSHIKAWA T, MORITA K. An evolving method for solar-grade silicon production: solvent refining[J]. JOM, 2012, 64(8): 946-951. [3] LUO D W, LIU N, LU Y P, et al. Removal of boron from metallurgical grade silicon by electromagnetic induction slag melting[J]. Transactions of Nonferrous Metals Society of China, 2011, 21(5): 1178-1184. [4] MITRAINOVIĆ A M, UTIGARD T A. Refining silicon for solar cell application by copper alloying[J]. Silicon, 2009, 1(4): 239-248. [5] HUANG L Q, LAI H X, LU C H, et al. Segregation behavior of iron in metallurgical grade silicon during SiCu solvent refining[J]. Vacuum, 2016, 129: 38-44. [6] YIN Z, OLIAZADEH A, ESFAHANI S, et al. Solvent refining of silicon using nickel as impurity getter[J]. Canadian Metallurgical Quarterly, 2011, 50(2): 166-172. [7] KHAJAVI L T, BARATI M. Thermodynamics of phosphorus in solvent refining of silicon using ferrosilicon alloys[J]. Metallurgical and Materials Transactions B, 2017, 48(1): 268-275. [8] SAKIANI H, TABAIAN S H, CHEN J. Effect of calcium addition on the silicon purification in the presence of low concentration of iron[J]. Journal of Alloys and Compounds, 2020, 830: 154112. [9] MA X D, YOSHIKAWA T, MORITA K. Purification of metallurgical grade Si combining Si-Sn solvent refining with slag treatment[J]. Separation and Purification Technology, 2014, 125: 264-268. [10] LI Y L, CHEN J. Boron and phosphorus removal during high purity hypereutectic Al-Si solidification[J]. Metals and Materials International, 2020, 26(4): 526-531. [11] LI Y L, BAN B Y, LI J W, et al. Effect of cooling rate on phosphorus removal during Al-Si solvent refining[J]. Metallurgical and Materials Transactions B, 2015, 46(2): 542-544. [12] OBINATA I, KOMATSU N. Method of refining silicon by alloying: experiments in semi-industrial scale[J]. Journal of the Japan Institute of Metals, 1954, 18: 283-285. [13] MORITA K, YOSHIKAWA T. Thermodynamic evaluation of new metallurgical refining processes for SOG-silicon production[J]. Transactions of Nonferrous Metals Society of China, 2011, 21(3): 685-690. [14] BAN B Y, LI J W, BAI X L, et al. Mechanism of B removal by solvent refining of silicon in Al-Si melt with Ti addition[J]. Journal of Alloys and Compounds, 2016, 672: 489-496. [15] CHEN K, CHEN X H, LEI Y, et al. Mechanism of enhancing B removal from Si with V addition using AlSi as the refining solvent[J]. Separation and Purification Technology, 2018, 203: 168-177. [16] LEI Y, MA W H, SUN L E, et al. Removal of B from Si by Hf addition during Al-Si solvent refining process[J]. Science and Technology of Advanced Materials, 2016, 17(1): 12-19. [17] ZHU M Y, YUE S Y, WU G X, et al. P removal from Si by Si-Ca-Al alloying-leaching refining: effect of Al and the Ca Al2Si2 phase[J]. Separation and Purification Technology, 2021, 271: 118675. [18] CHEN C, LI J, SONG W, et al. Enhancing P removal from primary Si by P-containing Al2Si2Sr phase during Al-Si solvent refining[J]. Materials Science in Semiconductor Processing, 2022,147:106769. [19] ULLAH M W, CARLBERG T. Silicon crystal morphologies during solidification refining from Al-Si melts[J]. Journal of Crystal Growth, 2011, 318(1): 212-218. [20] YU W Z, MA W H, ZHENG Z, et al. Si purification by removal of entrapped Al during electromagnetic solidification refining of Si-Al alloy[J]. Metallurgical and Materials Transactions B, 2017, 48(5): 2804-2811. [21] ARNBERG L, FREDRIKSSON H, EKEROT S, et al. Solvent refining of silicon for solar cells-some practical aspects[J]. Journal of Crystal Growth, 2020, 531: 125332. [22] YOSHIKAWA T, MORITA K. Solid solubilities and thermodynamic properties of aluminum in solid silicon[J]. Journal of the Electrochemical Society, 2003, 150(8): G465. [23] YOSHIKAWA T, MORITA K. Continuous solidification of Si from Si-Al melt under the induction heating[J]. ISIJ International, 2007, 47(4): 582-584. [24] LV G Q, BAO Y, ZHANG Y F, et al. Effects of electromagnetic directional solidification conditions on the separation of primary silicon from Al-Si alloy with high Si content[J]. Materials Science in Semiconductor Processing, 2018, 81: 139-148. [25] NISHI Y, KANG Y, MORITA K. Control of Si crystal growth during solidification of Si-Al melt[J]. Materials Transactions, 2010, 51(7): 1227-1230. [26] LI J W, LI J C, LIN Y H, et al. Separation and recovery of refined Si from Al-Si melt by modified czochralski method[J]. Materials, 2020, 13(4): 996. [27] YOSHIKAWA T, MORITA K. Refining of Si by the solidification of Si-Al melt with electromagnetic force[J]. ISIJ International, 2005, 45(7): 967-971. [28] OLESINSKI R W, ABBASCHIAN G J. The Cu-Si (copper-silicon) system[J]. Bulletin of Alloy Phase Diagrams, 1986, 7(2): 170-178. [29] YOSHIKAWA T, MORITA K. Activity measurements of Al and Cu in Si-Al-Cu melt at 1273 and 1373 K by the equilibration with molten Pb[J]. Journal of Alloys and Compounds, 2006, 420(1/2): 136-144. [30] GAO M M, ZHAO X, GAO A, et al. Effect of Si content on the morphology evolution of the Si primary dendrites in Al-Si alloy solvent refining process[J]. Silicon, 2022, 14(9): 4501-4508. [31] 高忙忙, 高 昂, 强 璐, 等. 利用梯度保温提高合金法提纯多晶硅收率的方法: CN109628995B[P]. 2021-05-14. GAO M M, GAO A, QIANG L, et al. Method for Improving the yield of polysilicon purified by alloy method using gradient insulation: CN109628995B. 2021-05-14 (in Chinese). [32] 祁雪燕. Cu对Al-Si合金法制备高纯多晶硅收率和杂质的影响研究[D]. 银川: 宁夏大学, 2020. QI X Y. Effect of Cu on the recovery rate and purity of primary silicon prepared by Al-Si alloy refining method[D]. Yinchuan: Ningxia University, 2020 (in Chinese). [33] MIODOWNIK A P. Phase diagrams of binary copper alloys[M]. Materials Park, OH: ASM International,1994. [34] MURRAY J L, MCALISTER A J. The Al-Si (aluminum-silicon) system[J]. Bulletin of Alloy Phase Diagrams, 1984, 5(1): 74-84. [35] MIKI T, OGAWA N, NAGASAKA T, et al. Activity measurement of silicon in molten Cu-Si binary alloy[J]. ISIJ International, 2002, 42(10): 1071-1074. [36] PONWEISER N, LENGAUER C L, RICHTER K W. Re-investigation of phase equilibria in the system Al-Cu and structural analysis of the high-temperature phase η1-Al1-δCu[J]. Intermetallics, 2011, 19(11): 1737-1746. [37] HU L, WANG Z, GONG X Z, et al. Impurities removal from metallurgical-grade silicon by combined Sn-Si and Al-Si refining processes[J]. Metallurgical and Materials Transactions B, 2013, 44(4): 828-836. [38] LI J W, GUO Z C, LI J C, et al. Super gravity separation of purified Si from solvent refining with the Al-Si alloy system for solar grade silicon[J]. Silicon, 2015, 7(3): 239-246. [39] DORWARD R C, KIRKALDY J S. Thermodynamic properties of copper and gold in silicon and germanium[J]. Trans Met Soc AIME, 1968, 242(10). [40] YU Z Y, FU X, ZHU J. Revisiting the twin plane re-entrant edge growth mechanism at an atomic scale by electron microscopy[J]. Crystal Growth & Design, 2014, 14(9): 4411-4417. [41] 张 蓉, 黄太文, 刘 林. 过共晶Al-Si合金熔体中初生硅生长特性[J]. 中国有色金属学报, 2004, 14(2): 262-266. ZHANG R, HUANG T W, LIU L. Growth behavior of primary silicon in hypereutectic Al-Si alloy[J]. The Chinese Journal of Nonferrous Metals, 2004, 14(2): 262-266 (in Chinese). |