硫属钙钛矿BaZrS3及其制备的研究进展和展望

摘要/Abstract

摘要： 铅卤钙钛矿的毒性和稳定性仍然是当前待解决的研究难题,有必要寻求无毒、稳定的“神似”铅卤钙钛矿的新型光电材料。硫属钙钛矿ABX₃(X=S,Se)由于高度稳定、组成元素丰富且无毒,具有良好的光学和电学特性,可用于各种光电材料,成为关注的焦点。当前研究最广泛的硫属钙钛矿BaZrS₃具有合适的直接带隙、优异的光吸收、良好的载流子传输性能、优异的化学稳定性和环境友好性,极具发展潜力。本文综述了BaZrS₃在理论计算、粉体及薄膜材料制备方面的最新进展,尤其对BaZrS₃的制备做了深入分析,并对BaZrS₃研究中的关键问题进行了分析和展望。本综述将为新进入这一领域的研究者提供重要借鉴,促进安全、稳定、环境友好的新一代光电材料的进一步发展。

关键词: 硫属钙钛矿, 光电材料, 钡锆硫, 半导体, 薄膜材料

Abstract: Toxicity and stability of lead halide perovskite are still crucial problem to be solved, and it is necessary to seek non-toxic and stable new optoelectronic materials with similar structure of lead halide perovskites. Chalcogenide perovskite ABX₃(X=S,Se) have become the focus of research recently for its high stability, non-toxicity and being abundant in earth element. ABX₃(X=S,Se) also has good optical and electrical properties, and can be used in various photoelectric materials, making it suitable for various optoelectronic materials. The most widely studied material is chalcogenide perovskite BaZrS₃. BaZrS₃ has suitable direct bandgap, excellent light absorption, good carrier transport properties, excellent chemical stability and environmentally benign nature. This article reviews the latest progress in theoretical calculations, synthesis methods of powders and thin film of BaZrS₃, especially gives in-depth analysis of the synthesis of BaZrS₃. Key issues in the synthesis of BaZrS₃ are discussed. This review will provide important references for new researchers entering this field and promote the further development of safe, stable and environmentally new generation optoelectronic materials.

Key words: chalcogenide perovskite, photoelectric material, BaZrS₃, semiconductor, thin-film material

中图分类号:

TB34

丁涛, 李晴雯, 徐玉琦, 钟敏. 硫属钙钛矿BaZrS₃及其制备的研究进展和展望[J]. 人工晶体学报, 2024, 53(6): 922-929.

DING Tao, LI Qingwen, XU Yuqi, ZHONG Min. Research Progress and Prospect of Chalcogenide Perovskite of BaZrS₃ and Its Preparation[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(6): 922-929.

参考文献

[1] JIANG Q, TIRAWAT R, KERNER R A, et al. Towards linking lab and field lifetimes of perovskite solar cells[J]. Nature, 2023, 623: 313-318.
[2] LIN K B, XING J, QUAN L N, et al. Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent[J]. Nature, 2018, 562: 245-248.
[3] NREL best research-cell efficiency chart. . https://www.nrel.gov/pv/cell-efficiency.html.
[4] XIAO Z W, SONG Z N, YAN Y F. From lead halide perovskites to lead-free metal halide perovskites and perovskite derivatives[J]. Advanced Materials, 2019, 31(47): e1803792.
[5] SWARNKAR A, MIR W J, CHAKRABORTY R, et al. Are chalcogenide perovskites an emerging class of semiconductors for optoelectronic properties and solar cell?[J]. Chemistry of Materials, 2019, 31(3): 565-575.
[6] SUHAIL M, ABBAS H, KHAN M B, et al. Chalcogenide perovskites for photovoltaic applications: a review[J]. Journal of Nanoparticle Research, 2022, 24(7): 142.
[7] SUN Y Y, AGIORGOUSIS M L, ZHANG P H, et al. Chalcogenide perovskites for photovoltaics[J]. Nano Letters, 2015, 15(1): 581-585.
[8] SOPIHA K V, COMPAROTTO C, MÁRQUEZ J A, et al. Chalcogenide perovskites: tantalizing prospects, challenging materials[J]. Advanced Optical Materials, 2022, 10(3): 2101704.
[9] SUN Q D, YIN W J. Thermodynamic stability trend of cubic perovskites[J]. Journal of the American Chemical Society, 2017, 139(42): 14905-14908.
[10] JU M G, DAI J, MA L, et al. Perovskite chalcogenides with optimal bandgap and desired optical absorption for photovoltaic devices[J]. Advanced Energy Materials, 2017, 7(18): 1700216.
[11] AGIORGOUSIS M L, SUN Y Y, CHOE D H, et al. Machine learning augmented discovery of chalcogenide double perovskites for photovoltaics[J]. Advanced Theory and Simulations, 2019, 2(5): 1900200.
[12] NIU S Y, HUYAN H X, LIU Y, et al. Bandgap control via structural and chemical tuning of transition metal perovskite chalcogenides[J]. Advanced Materials, 2017, 29(9): 1604733.
[13] ZHANG P, CHEN B S, ZHU W X, et al. First-principles prediction of structural, mechanical and thermal properties of perovskite BaZrS₃[J]. The European Physical Journal B, 2020, 93(6): 97.
[14] WU X W, GAO W W, CHAI J, et al. Defect tolerance in chalcogenide perovskite photovoltaic material BaZrS₃[J]. Science China Materials, 2021, 64(12): 2976-2986.
[15] MENG W W, SAPAROV B, HONG F, et al. Alloying and defect control within chalcogenide perovskites for optimized photovoltaic application[J]. Chemistry of Materials, 2016, 28(3): 821-829.
[16] ZENG H. Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite[R]. United States, 2018.
[17] EYA H I, DZADE N Y. Density functional theory insights into the structural, electronic, optical, surface, and band alignment properties of BaZrS₃ chalcogenide perovskite for photovoltaics[J]. ACS Applied Energy Materials, 2023, 6(11): 5729-5738.
[18] HANZAWA K, IIMURA S, HIRAMATSU H, et al. Material design of green-light-emitting semiconductors: perovskite-type sulfide SrHfS₃[J]. Journal of the American Chemical Society, 2019, 141(13): 5343-5349.
[19] NISHIGAKI Y, NAGAI T, NISHIWAKI M, et al. Extraordinary strong band-edge absorption in distorted chalcogenide perovskites[J]. Solar RRL, 2020, 4(5): 2070051.
[20] PERERA S, HUI H L, ZHAO C, et al. Chalcogenide perovskites-an emerging class of ionic semiconductors[J]. Nano Energy, 2016, 22: 129-135.
[21] LIANG Y R, ZHANG Y W, XU J, et al. Parametric study on controllable growth of SrZrS₃ thin films with good conductivity for photodetectors[J]. Nano Research, 2023, 16(5): 7867-7873.
[22] CROVETTO A, NIELSEN R, PANDEY M, et al. Shining light on sulfide perovskites: LaYS₃ material properties and solar cells[J]. Chemistry of Materials, 2019, 31(9): 3359-3369.
[23] WEI X C, HUI H L, ZHAO C, et al. Realization of BaZrS₃ chalcogenide perovskite thin films for optoelectronics[J]. Nano Energy, 2020, 68: 104317.
[24] KANOUN M B, UL HAQ B, KANOUN A A, et al. Ti alloying as a route to BaZrS₃ chalcogenide perovskite with enhanced photovoltaic performance[J]. Energy & Fuels, 2023, 37(13): 9548-9556.
[25] FILIPPONE S, ZHAO B Y, NIU S Y, et al. Discovery of highly-polarizable semiconductors BaZrS₃ and Ba₃Zr₂S₇[J]. Physical Review Materials, 2020, 4(9): 091601
[26] THAKUR N, ALY K A, MOHERY M, et al. Recent advances in BaZrS₃ perovskites: synthesis, properties, and future trends[J]. Journal of Alloys and Compounds, 2023, 957: 170457.
[27] HAHN H, MUTSCHKE U. Untersuchungen über ternäre chalkogenide. XI. versuche zur darstellung von thioperowskiten[J]. Zeitschrift Für Anorganische Und Allgemeine Chemie, 1957, 288(5/6): 269-278.
[28] SATO N, WANG Y, YAMADA K, et al. Synthesis of transition metal mixed sulfides MTS₃ (M=Ba, Pb, T=Ti, Zr) using sulfur melt[J]. Journal of Alloys and Compounds, 2000, 311:214-216..
[29] WANG Y R, SATO N, FUJINO T. Synthesis of BaZrS₃ by short time reaction at lower temperatures[J]. Journal of Alloys and Compounds, 2001, 327(1/2): 104-112.
[30] YANG R Q, NELSON J, FAI C, et al. A low-temperature growth mechanism for chalcogenide perovskites[J]. Chemistry of Materials, 2023, 35(12): 4743-4750.
[31] AGARWAL S, TURNLEY J W, PRADHAN A A, et al. Moderate temperature sulfurization and selenization of highly stable metal oxides: an opportunity for chalcogenide perovskites[J]. Journal of Materials Chemistry C, 2023, 11(45): 15817-15823.
[32] ROMAGNOLI L, CICCIOLI A, DALE P J, et al. A simple synthetic approach to BaZrS₃, BaHfS₃, and their solid solutions[J]. Journal of the American Ceramic Society, 2024, 107(2): 698-703.
[33] YANG R Q, JESS A D, FAI C, et al. Low-temperature, solution-based synthesis of luminescent chalcogenide perovskite BaZrS₃ nanoparticles[J]. Journal of the American Chemical Society, 2022, 144(35): 15928-15931.
[34] ZILEVU D, PARKS O O, CREUTZ S E. Solution-phase synthesis of the chalcogenide perovskite barium zirconium sulfide as colloidal nanomaterials[J]. Chemical Communications, 2022, 58(75): 10512-10515.
[35] GUPTA T, GHOSHAL D, YOSHIMURA A, et al. An environmentally stable and lead-free chalcogenide perovskite[J]. Advanced Functional Materials, 2020, 30(23): 2001387.
[36] COMPAROTTO C, DAVYDOVA A, ERICSON T, et al. Chalcogenide perovskite BaZrS₃: thin film growth by sputtering and rapid thermal processing[J]. ACS Applied Energy Materials, 2020, 3(3): 2762-2770.
[37] SADEGHI I, YE K, XU M, et al. Making BaZrS₃ chalcogenide perovskite thin films by molecular beam epitaxy[J]. Advanced Functional Materials, 2021, 31(45): 2105563.
[38] HAN Y B, XU J, LIANG Y R, et al. P-type conductive BaZrS₃ thin film and its band gap tunning via ruddlesden-popper Ba₃Zr₂S₇ and titanium alloying[J]. Chemical Engineering Journal, 2023, 473: 145351.
[39] YU Z H, WEI X C, ZHENG Y X, et al. Chalcogenide perovskite BaZrS₃ thin-film electronic and optoelectronic devices by low temperature processing[J]. Nano Energy, 2021, 85: 105959.
[40] COMPAROTTO C, STRÖM P, DONZEL-GARGAND O, et al. Synthesis of BaZrS₃ perovskite thin films at a moderate temperature on conductive substrates[J]. ACS Applied Energy Materials, 2022, 5(5): 6335-6343.
[41] TURNLEY J W, VINCENT K C, PRADHAN A A, et al. Solution deposition for chalcogenide perovskites: a low-temperature route to BaMS₃ materials (M=Ti, Zr, Hf)[J]. Journal of the American Chemical Society, 2022, 144(40): 18234-18239.
[42] PRADHAN A A, UIBLE M C, AGARWAL S, et al. Synthesis of BaZrS₃ and BaHfS₃ chalcogenide perovskite films using single-phase molecular precursors at moderate temperatures[J]. Angewandte Chemie, 2023, 135(15): e202301049.
[43] DHOLE S, WEI X C, HUI H L, et al. A facile aqueous solution route for the growth of chalcogenide perovskite BaZrS₃ films[J]. Photonics, 2023, 10(4): 366.

硫属钙钛矿BaZrS₃及其制备的研究进展和展望

Research Progress and Prospect of Chalcogenide Perovskite of BaZrS₃ and Its Preparation

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