Al0.1Ga0.9N电子阻挡层对In0.26Ga0.74N/GaN多量子阱材料的光学特性影响

doi:10.16553/j.cnki.issn1000-985x.2024.0296

摘要/Abstract

摘要： 本研究聚焦Al_0.1Ga_0.9N电子阻挡层对In_0.26Ga_0.74N/GaN多量子阱材料光学特性的影响。通过AFM表征，发现插入Al_0.1Ga_0.9N电子阻挡层的InGaN材料的表面粗糙度从94.42 nm显著减小到54.72 nm，降低了42.05%。HRXRD测试表明，材料的螺位错与刃位错密度分别下降了13.39%和45.53%，且阱垒界面的陡峭程度显著提升。PL谱分析结果表明，该材料表现出发光峰半高峰全宽变窄和发光强度增强的特征，同时观测到发光波长呈现一定程度的红移现象。研究结果发现，插入Al_0.1Ga_0.9N电子阻挡层能够有效降低In_0.26Ga_0.74N/GaN多量子阱材料的缺陷密度，有效降低非辐射复合效率，进而增强材料的发光性能。此研究为高效太阳能电池的制备提供了必备的实验基础。

关键词: In_0.26Ga_0.74N/GaN多量子阱; 电子阻挡层; 阱垒界面质量; 非辐射复合中心

Abstract: This study focuses on the effect of Al_0.1Ga_0.9N electron blocking layer （EBL） on the optical properties of In_0.26Ga_0.74N/GaN multiple quantum wells （MQWs） materials. Through atomic force microscopy （AFM） characterization， it is found that the surface roughness of the InGaN material with the inserted Al_0.1Ga_0.9N EBL is significantly reduced from 94.42 nm to 54.72 nm， a reduction of 42.05%. High-resolution X-ray diffraction （HRXRD） tests show that the spiro dislocation and edge dislocation densities of the material have decreased by 13.39% and 45.53%， respectively， and the steepness of the trap-barrier interface has been significantly enhanced. The photoluminescence （PL） spectroscopic study shows that not only the full width at half maximum （FWHM） of the luminescence peaks of the material becomes narrower and the luminescence intensity is enhanced， but also the luminescence wavelength shows a certain degree of redshift. It is found that the insertion of Al_0.1Ga_0.9N EBL can effectively reduce the defect density of In_0.26Ga_0.74N/GaN multiple quantum wells materials， effectively reduce the non-radiative recombination efficiency， and then enhance the luminescence performance of the materials. This study provides a necessary experimental basis for the preparation of high-efficiency solar cells.

Key words: In_0.26Ga_0.74N/GaN multiple quantum well; electron blocking layer; interfacial quality between trap and barrier; non-radiation recombination center

中图分类号:

O484

刘振华, 刘胜威, 王一心, 单恒升. Al_0.1Ga_0.9N电子阻挡层对In_0.26Ga_0.74N/GaN多量子阱材料的光学特性影响[J]. 人工晶体学报, 2025, 54(8): 1433-1440.

LIU Zhenhua, LIU Shengwei, WANG Yixin, SHAN Hengsheng. Effect of Al_0.1Ga_0.9N Electron Blocking Layer on Optical Properties of In_0.26Ga_0.74N/GaN Multiple Quantum Wells[J]. Journal of Synthetic Crystals, 2025, 54(8): 1433-1440.

图/表 9

图1 样品A和样品B的外延层示意图

Fig.1 Schematic illustrations of the epitaxial layers for sample A and sample B

图2 样品A与样品B的AFM照片

Fig.2 AFM images of sample A and sample B

图3 样品A和样品B在（002）和（102）平面上的InGaN材料的摇摆曲线和FWHM

Fig.3 Rocking curves and FWHM of InGaN materials of sample A and sample B on the （002） and （102） planes

表1 样品A和样品B摇摆曲线的FWHM和位错密度

Table 1 FWHM and dislocation density of rocking curves of sample A and sample B

Sample	（002）FWHM/（″）	Screw dislocation/（10⁸ cm^-2）	（102）FWHM/（″）	Edge dislocation/（10⁸ cm^-2）	Total dislocation/（10⁸ cm^-2）
A	452.032	4.107	715.208	27.178	31.285
B	420.672	3.557	527.846	14.804	18.361

图4 对样品A和样品B在（002）平面上的2θ-ω扫描曲线

Fig.4 2θ-ω scaning curves of sample A and sample B on the （002） plane

表2 用HRXRD测定样品A和样品B的结构参数

Table 2 Structural parameters determined by HRXRD of sample A and sample B

Sample	0th FWHM/（″）	-1st FWHM/（″）	-2nd FWHM/（″）	-3rd FWHM/（″）
A	543.999 5	463.622 7	443.508 4	424.600 2
B	396.974 4	388.205 4	373.687 0	343.027 6

图5 样品A和样品B卫星峰的FWHM及拟合曲线

Fig.5 FWHM and fitting curves of the satellite peaks for sample A and sample B

图6 样品A和样品B在300 K下归一化的PL光谱

Fig.6 Normalized PL spectra of sample A and sample B at 300 K

图7 样品A（a）、样品B（b）的PL峰波长的彩色mapping图像，样品A（c）、样品B（d）的PL发光强度，以及样品A（e）、样品B（f）的FWHM

Fig.7 Colored mapping images of PL peak wavelength for sample A （a）， sample B （b）， PL luminescence intensity for sample A （c）， sample B （d） and FWHM for sample A （e）， sample B （f）

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