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人工晶体学报 ›› 2023, Vol. 52 ›› Issue (3): 442-451.

• 研究论文 • 上一篇    下一篇

单晶金刚石声子非简谐衰减效应研究

李斌1,2, 胡秀飞1,2, 杨旖秋1,2, 王英楠1,2, 谢雪健1,2, 彭燕1,2, 杨祥龙1,2, 王希玮1,2, 胡小波1,2, 徐现刚1,2, 冯志红3,4   

  1. 1.山东大学新一代半导体材料研究院,济南 250100;
    2.山东大学晶体材料国家重点实验室,济南 250100;
    3.专用集成电路国家级重点实验室,石家庄 050051;
    4.中国电子科技集团公司第十三研究所,石家庄 050051
  • 收稿日期:2022-10-25 出版日期:2023-03-15 发布日期:2023-04-06
  • 通信作者: 谢雪健,博士,研究员。E-mail:xiexj@sdu.edu.cn
    彭 燕,博士,副教授。E-mail:pengyan@sdu.edu.cn
    冯志红,博士,研究员。E-mail:ga917vv@163.com
  • 作者简介:李 斌(1996—),男,山东省人,硕士研究生。E-mail:libin1215@mail.sdu.edu.cn
  • 基金资助:
    山东省重大科技创新项目(2022CXGC010103);国家自然科学基金(62004118);晶体材料国家重点实验室自主课题;国防科技重点实验室基金项目

Anharmonic Phonon Decay Effect of Single Crystal Diamond

LI Bin1,2, HU Xiufei1,2, YANG Yiqiu1,2, WANG Yingnan1,2, XIE Xuejian1,2, PENG Yan1,2, YANG Xianglong1,2, WANG Xiwei1,2, HU Xiaobo1,2, XU Xiangang1,2, FENG Zhihong3,4   

  1. 1. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
    2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
    3. National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;
    4. The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China
  • Received:2022-10-25 Online:2023-03-15 Published:2023-04-06

摘要: 随着金刚石作为散热材料在大功率半导体器件、激光器、微波器件和大规模集成电路等领域中的应用愈加广泛,通过对金刚石局部进行精确测温以评价其散热性能是一个重要的研究课题。本文使用拉曼光谱仪对不同掺杂类型的高温高压(HTHP)样品和化学气相沉积(CVD)样品在228~678 K进行检测,得到了金刚石样品TO模拉曼峰位、半峰全宽等与温度的一一对应关系,并通过理论计算模型明确了热膨胀、三声子、四声子随温度变化对拉曼峰位、半峰全宽的贡献。理论和实验测试结果发现:不同掺杂以及不同类型样品的拉曼光谱峰位无明显区别;随温度升高,半峰全宽宽化,主要影响因素为声子衰减导致的非简谐效应,同时受载流子的电离率、浓度、类型,以及缺陷和杂质影响;声子寿命主要受到声子的非简谐衰减作用影响,基本不受杂质散射的影响。本研究为金刚石材料的温度检测提供了一种无损、非接触、高空间分辨率的方法。

关键词: 单晶金刚石, 拉曼光谱, 掺杂, 温度相关性, 声子衰减, 声子寿命

Abstract: As a promising heat dissipation material, diamond is wildly used in high power semiconductor devices, lasers, microwave devices and large-scale integrated circuit fields. The accurate local temperature measurement of diamond to evaluate its heat dissipation performance has become an important research topic. In this paper, Raman spectroscopy was employed to investigate the Raman spectra (TO mode) characteristics of diamond in the temperature range of 228 to 678 K. The one-to-one correspondence between Raman peak position, full width at half maximum (FWHM) and temperature of different doped diamond samples was established. The contributions of thermal expansion, three phonons and four phonons to Raman peak position at variable temperatures were analyzed by theoretical model calculation. The results show that there is no significant difference among the Raman spectra of different doped samples of HTHP and CVD. With the increase of temperature, the FWHM broadens. It is considered that the anharmonic effect caused by phonon attenuation is the determining factor, while the ionization rate, concentration and type of carriers, defects and impurities contribute partial influence. Meanwhile, the phonon lifetime is mainly affected by the anharmonic attenuation of phonons, and appears largely unaffected by impurity scattering. This study shed light on a non-destructive, non-contact, high spatial resolution method to the temperature measurement for diamond materials.

Key words: single crystal diamond, Raman spectrum, doping, temperature dependency, phonon decay, phonon lifetime

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