Journal of Synthetic Crystals ›› 2025, Vol. 54 ›› Issue (12): 2173-2180.DOI: 10.16553/j.cnki.issn1000-985x.2025.0163
• Research Articles • Previous Articles Next Articles
WU Jiayin1(
), WEI Jingting1(
), LI Bin1, LI Zongbao2, MO Qiuyan3
Received:2025-07-27
Online:2025-12-20
Published:2026-01-04
CLC Number:
WU Jiayin, WEI Jingting, LI Bin, LI Zongbao, MO Qiuyan. Density Functional Theory Investigation of N2O and HCN Adsorption Behavior on SnSe Monolayers[J]. Journal of Synthetic Crystals, 2025, 54(12): 2173-2180.
Fig.1 Most stable configurations, and corresponding differential charge density distribution of SnSe monolayer before and after gas adsorption. Sn-terminated (a) and Se-terminated (b) of SnSe; most stable configuration of N2O (c) and HCN (e); differential charge density of N2O (d) and HCN (f) adsorption
| 吸附面 | 位置 | N2O方向1 | N2O@SnSe体系能/eV | HCN方向1 | HCN@SnSe体系能量/eV |
|---|---|---|---|---|---|
| Sn | B1 | N | -150.085 | H | -149.996 |
| Sn | B1 | O | -149.996 | N | -150.085 |
| Sn | B1 | para | -150.046 | para | -150.038 |
| Sn | H1 | N | -150.068 | H | -149.997 |
| Sn | H1 | O | -149.993 | N | -150.066 |
| Sn | H1 | para | -149.950 | para | -149.950 |
| Sn | TSe1 | N | -150.077 | H | -149.980 |
| Sn | TSe1 | O | -151.699 | N | -150.078 |
| Sn | TSe1 | para | -149.945 | para | -149.945 |
| Sn | TSn1 | N | -149.936 | H | -150.004 |
| Sn | TSn1 | O | -150.005 | N | -149.933 |
| Sn | TSn1 | para | -151.741 | para | -150.029 |
| Se | B2 | N | -150.013 | H | -150.094 |
| Se | B2 | O | -150.094 | N | -150.014 |
| Se | B2 | para | -150.069 | para | -150.073 |
| Se | H2 | N | -150.040 | H | -150.091 |
| Se | H2 | O | -150.091 | N | -150.040 |
| Se | H2 | para | -150.074 | para | -150.074 |
| Se | TSe2 | N | -149.966 | H | -150.094 |
| Se | TSe2 | O | -150.094 | N | -149.962 |
| Se | TSe2 | para | -151.755 | para | -150.045 |
| Se | TSn2 | N | -150.009 | H | -150.106 |
| Se | TSn2 | O | -150.106 | N | -150.008 |
| Se | TSn2 | para | -151.766 | para | -150.083 |
Table 1 Adsorption energies of gas molecules at different sites
| 吸附面 | 位置 | N2O方向1 | N2O@SnSe体系能/eV | HCN方向1 | HCN@SnSe体系能量/eV |
|---|---|---|---|---|---|
| Sn | B1 | N | -150.085 | H | -149.996 |
| Sn | B1 | O | -149.996 | N | -150.085 |
| Sn | B1 | para | -150.046 | para | -150.038 |
| Sn | H1 | N | -150.068 | H | -149.997 |
| Sn | H1 | O | -149.993 | N | -150.066 |
| Sn | H1 | para | -149.950 | para | -149.950 |
| Sn | TSe1 | N | -150.077 | H | -149.980 |
| Sn | TSe1 | O | -151.699 | N | -150.078 |
| Sn | TSe1 | para | -149.945 | para | -149.945 |
| Sn | TSn1 | N | -149.936 | H | -150.004 |
| Sn | TSn1 | O | -150.005 | N | -149.933 |
| Sn | TSn1 | para | -151.741 | para | -150.029 |
| Se | B2 | N | -150.013 | H | -150.094 |
| Se | B2 | O | -150.094 | N | -150.014 |
| Se | B2 | para | -150.069 | para | -150.073 |
| Se | H2 | N | -150.040 | H | -150.091 |
| Se | H2 | O | -150.091 | N | -150.040 |
| Se | H2 | para | -150.074 | para | -150.074 |
| Se | TSe2 | N | -149.966 | H | -150.094 |
| Se | TSe2 | O | -150.094 | N | -149.962 |
| Se | TSe2 | para | -151.755 | para | -150.045 |
| Se | TSn2 | N | -150.009 | H | -150.106 |
| Se | TSn2 | O | -150.106 | N | -150.008 |
| Se | TSn2 | para | -151.766 | para | -150.083 |
| 气体 | Ead/eV | d/Å1 | △Q/e | Eg/eV | 类型 |
|---|---|---|---|---|---|
| N2O | -0.305 | 3.471 | -0.026 | 2.173 | 施主 |
| HCN | -0.384 | 3.115 | -0.027 | 2.224 | 施主 |
Table 2 Adsorption energy (Ead), adsorption distance (d), charge transfer (ΔQ), and band gap (Eg) values
| 气体 | Ead/eV | d/Å1 | △Q/e | Eg/eV | 类型 |
|---|---|---|---|---|---|
| N2O | -0.305 | 3.471 | -0.026 | 2.173 | 施主 |
| HCN | -0.384 | 3.115 | -0.027 | 2.224 | 施主 |
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