Silicon carbide （SiC）， as a representative third-generation wide-bandgap semiconductor material， has demonstrated great potential for applications in high-temperature， high-voltage， and high-frequency power electronic devices due to its excellent electrical， thermal， and mechanical properties. Among the various SiC polytypes， cubic silicon carbide （3C-SiC） exhibits higher electron mobility， lower interface trap density， and superior channel characteristics， making it highly competitive for devices operating in the medium voltage range. This review summarizes the recent progress in the epitaxial growth of 3C-SiC， with a particular focus on comparing the characteristics of chemical vapor deposition （CVD） and sublimation epitaxy （SE） in terms of growth processes， defect evolution， and substrate selection. The formation mechanisms and impacts of key structural defects including point defects， stacking faults， anti-phase boundaries， surface protrusions， and residual stress are systematically analyzed. Furthermore， the latest advances in 3C-SiC-based power diodes， MOSFETs， and heterostructure devices are reviewed. Finally， future development directions for improving the epitaxial quality and device performance of 3C-SiC through substrate engineering， defect control， and process optimization are discussed.
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