Research Progress on β-Ga2O3 Radio Frequency Power Devices

doi:10.16553/j.cnki.issn1000-985x.2025.0054

Abstract

Abstract: Ultra-wide bandgap semiconductor material gallium oxide （β-Ga₂O₃） has the properties of high critical breakdown field strength， high electron saturation velocity， and large-size single crystal substrate grown by the melt method. It is expected to find wide applications in high-voltage and high-power fields such as future power grid， rail transit， and radar communication. Although electronic devices based on gallium oxide materials have achieved rapid development in the world， the research of gallium oxide-based radio frequency （RF） devices has been restricted by low carrier mobility and poor thermal conductivity of β-Ga₂O₃ materials. Firstly， this paper analyzes the development needs of high-voltage RF power devices， including higher power levels， smaller and lighter equipment， and more efficient systems. Then， the reasons why gallium oxide material is suitable for future high-voltage and high-power radio frequency devices are elaborated from four aspects： breakdown field strength， saturation velocity， wafer fabrication， and thermal management. Next， the relevant research progress on gallium oxide-based RF power devices is discussed， focusing on three types of device structures： metal-oxide-semiconductor field-effect transistors （MOSFETs） on homogeneous and heterogeneous substrates， and heterojunction field-effect transistors （HFETs）. Finally， it is summarized that the two major obstacles to enhancing the performance of gallium oxide RF power devices are poor thermal conductivity and low current density. In addition， the research suggestions for future work in this field are also presented， such as heterogeneous integration with high-thermal-conductivity substrates， research on surface passivation techniques， and the reliability of devices in extreme environments， providing references for researchers in related fields.

Key words: gallium oxide; radio frequency; output power; frequency; power added efficiency; thermal conductivity

CLC Number:

TN303

ZHOU Min, ZHOU Hong, ZHANG Jincheng, HAO Yue. Research Progress on β-Ga₂O₃ Radio Frequency Power Devices[J]. Journal of Synthetic Crystals, 2025, 54(5): 721-736.

Figures/Tables 17

Fig.1 Semiconductor applications related to power and frequency［1］

Fig.2 Schematic diagram of β-Ga2O3 cell structure［6］（a） and its energy band structure diagram［10］（b）

Table 1 Comparison of β-Ga2O3 properties with other mainstream semiconductor materials［6，11］

材料	Si	GaAs	4H-SiC	GaN	β-Ga₂O₃
带隙/eV	1.1	1.4	3.3	3.4	4.5~4.9
电子迁移率/（cm²·V^-1·s^-1）	1 400	8 000	1 000	1 250	200~250
临界击穿场强/（MV·cm^-1）	0.3	0.4	2.5	3.3	8
饱和速率/（10⁷ cm·s^-1）	1	1.2	2	2.5	1.8~2
介电常数，ε	11.8	12.9	9.4	9	10
热导率/（W·cm^-1·K^-1）	1.5	0.5	4.9	2.3	0.109~0.27
BFOM= $ε_{r} μ E_{b r}^{3}$	1	14.7	317	870	3 444
JFOM= $E_{b r}^{2} v_{s}^{2} / 4 π^{2}$	1	1.8	278	1 089	2 844
BHFFOM= $μ E_{b r}^{2}$	1	10.1	46.3	100.8	142.2

Table 1 Comparison of β-Ga2O3 properties with other mainstream semiconductor materials［6，11］

材料	Si	GaAs	4H-SiC	GaN	β-Ga₂O₃
带隙/eV	1.1	1.4	3.3	3.4	4.5~4.9
电子迁移率/（cm²·V^-1·s^-1）	1 400	8 000	1 000	1 250	200~250
临界击穿场强/（MV·cm^-1）	0.3	0.4	2.5	3.3	8
饱和速率/（10⁷ cm·s^-1）	1	1.2	2	2.5	1.8~2
介电常数，ε	11.8	12.9	9.4	9	10
热导率/（W·cm^-1·K^-1）	1.5	0.5	4.9	2.3	0.109~0.27
BFOM= $ε_{r} μ E_{b r}^{3}$	1	14.7	317	870	3 444
JFOM= $E_{b r}^{2} v_{s}^{2} / 4 π^{2}$	1	1.8	278	1 089	2 844
BHFFOM= $μ E_{b r}^{2}$	1	10.1	46.3	100.8	142.2

Fig.3 Influence of material characteristics on the performance of radio frequency devices and communication systems［12］

Fig.4 Theoretical differences in breakdown voltage and frequency characteristics of mainstream semiconductors， according to JFOM

Fig.5 Several techniques that contribute to the heat dissipation of gallium oxide. （a） Mechanical exfoliation［55］；（b） smart-cut［56］；（c） flip-chip package［60］

Fig.6 （a） A cross section schematic and a focused ion beam （FIB） cross sectional image of β-Ga2O3 MOSFET device；（b） large-signal power properties of β-Ga2O3 MOSFET at the frequency of 0.8 GHz［61］

Fig.7 （a） A cross section schematic of field-plated β-Ga2O3 MOSFET device；（b） large-signal power properties of field-plated β-Ga2O3 MOSFET at the frequency of 1 GHz［62］

Fig.8 Detla-doped β-Ga2O3 MOSFET［64］. （a） A cross section schematic；（b） scanning electron microscope image of T-shaped gate structure；（c） small-signal frequency characteristics

Fig.9 L-band β-Ga2O3 MOSFET［66］. （a） Schematic of the devic；（b） large-signal characteristics in pulsed mode. O2-annealing processed β-Ga2O3 MOSFET：（c） cross-sectional schematic of the device；（d） power sweep curve

Fig.10 Schematic of device structure and small signal characteristics of three β-Ga2O3 MOSFETs with different structures［69］. （a），（b） 2DEG-like channel；（c），（d） thin-channel T-shaped gate structure；（e），（f） quasi-2D high mobility channel

Fig. 11 Heterointegrated Ga2O3-on-SiC MOSFETs［73］. （a） Schematic of device structure；（b） small-signal frequency characteristics；（c） large-signal characteristics at the frequency of 2 GHz

Fig.12 β-Ga2O3-on-SiC RF MOSFET with heavily doped channel［74］. （a） Schematic of device structure；（b） small-signal frequency characteristics；（c） large-signal characteristics at the frequency of 2 GHz

Fig.13 β-Ga2O3-on-SiC RF MOSFET with bi-layer gate dielectric［75］. （a） Schematic of device structure；（b） small-signal frequency characteristics；（c） and （d） large-signal characteristics at VDS = 20 V and VDS = 50 V

Fig.14 Internationally representative works of Ga2O3 RF devices with β-（Al x Ga1-x ）2O3/Ga2O3 material structure

Table 2 The summary of advanced β-Ga2O3 RF devices

Structure/substrate	L_G/nm	g_m/（mS·mm^-1）	（f_T·f_max^-1）/GHz	P_out/（W·mm^-1）	PAE	Reference
MOSFET/Ga₂O₃	700	21	3.3/12.9	0.23（CW， 800 MHz）	6.3%	［61］
MOSFET/Ga₂O₃	140	25	5.1/17.1	—	—	［63］
MOSFET/Ga₂O₃	2 000	—	—	0.13（Pulse， 1 GHz）	12%	［62］
Delta-Doped MOSFET/Ga₂O₃	120	44	27/16	—	—	［64］
MOSFET/Ga₂O₃	200	17	9/27	—	—	［65］
MOSFET/Ga₂O₃	500	40	—	0.715（Pulse， 1 GHz）	23.4%	［66］
MOSFET/Ga₂O₃	500	40	—	0.487（Pulse， 2 GHz）	21.2%	［66］
MOSFET/Ga₂O₃	1 000	11	1.8/4.2	0.43（Pulse， 1 GHz）	12%	［67］
FinFET/Ga₂O₃	350	14.3	5.4/11/4	—	—	［68］
2DEG-like Channel MOSFET/Ga₂O₃	150	25	29/35	—	9.11%	［69］
thin channel MOSFET/Ga₂O₃	175	52	11/48	—	—	［70］
thin channel MOSFET/Ga₂O₃	90	36	27/55	—	—	［71］
Quasi-2D channel MOSFET/Ga₂O₃	900	54.2	18/42	—	—	［72］
HFET/Ga₂O₃	610	—	4/11.8	—	—	［77］
HFET/Ga₂O₃	160	64	30/37	—	—	［80］
Back-barrier MOSFET/Ga₂O₃	150	18	10/24	—	—	［82］
Heterointegrated MOSFET/SiC	100	57	47/51	0.296（CW， 2 GHz）	25.7%	［73］
Heavily doped channel MOSFET/SiC	180	70	27.6/57	2.3（CW， 2 GHz） 1.5（CW， 3 GHz） 1.3（CW， 5 GHz） 0.7（CW， 8 GHz）	31% 25% 17% 7%	［74］
MOSFET with bi-layer gate dielectrics/SiC	300	80	24/71	1.4（Pulse， 2 GHz） 3.1（Pulse， 2 GHz） 2.3（Pulse， 4 GHz）	50.8% 28% 23%	［75］

Fig.15 Performance comparison between Ga2O3 RF devices and GaN RF devices. （a） Frequency characteristics；（b） power characteristics （sub-6 GHz）

References 84

1	Accelerated adoption of RF GaN in Telecom Infrastructure as opportunities for GaN-on-Si？［EB/OL］. https://medias.yolegroup.com/uploads/2023/06/accelerated-adoption-of-gan-rf-in-telecom-infrastructure-as-opportunities-for-gan-on-si-cs-mantech.pdf.
2	GIACOMO M. Solid state RF amplifiers for accelerator applications［C］. Particle Accelerator Conference （PAC 09）， 2009.
3	FORMICONE G， BURGER J， CUSTER J， et al. Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology［C］// 2016 11th European Microwave Integrated Circuits Conference （EuMIC）. October 3-4， 2016， London， UK. IEEE， 2016： 33-36.
4	FORMICONE G， CUSTER J， BURGER J. First demonstration of a GaN-SiC RF technology operating above 100 V in S-band［C］. International Conference on Compound Semiconductor Manufacturing Technology， 2017.
5	FORMICONE G F. A highly manufacturable 75-150 VDC GaN-SiC RF technology for radars and particle accelerators［J］. IEEE Transactions on Semiconductor Manufacturing， 2018， 31（4）： 440-446.
6	HIGASHIWAKI M， SASAKI K， MURAKAMI H， et al. Recent progress in Ga₂O₃ power devices［J］. Semiconductor Science and Technology， 2016， 31（3）： 034001.
7	GELLER S. Crystal structure of β‐Ga₂O₃ ［J］. The Journal of Chemical Physics， 1960， 33（3）： 676-684.
8	ÅHMAN J， SVENSSON G， ALBERTSSON J. A reinvestigation of β-gallium oxide［J］. Acta Crystallographica Section C， 1996， 52（6）： 1336-1338.
9	UEDA N， HOSONO H， WASEDA R， et al. Anisotropy of electrical and optical properties in β-Ga₂O₃ single crystals［J］. Applied Physics Letters， 1997， 71（7）： 933-935.
10	MOCK A， KORLACKI R， BRILEY C， et al. Band-to-band transitions， selection rules， effective mass， and excitonic contributions in monoclinic β-Ga₂O₃ ［J］. Physical Review B， 2017， 96（24）： 245205.
11	MAIMON O， LI Q L. Progress in gallium oxide field-effect transistors for high-power and RF applications［J］. Materials， 2023， 16（24）： 7693.
12	GREEN B， MOORE K， HILL D， et al. GaN RF device technology and applications， present and future［C］// 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting （BCTM）. September 30 - October 3， 2013， Bordeaux， France. IEEE， 2013： 101-106.
13	ZHOU H， YAN Q L， ZHANG J C， et al. High-performance vertical β-Ga₂O₃ Schottky barrier diode with implanted edge termination［J］. IEEE Electron Device Letters， 2019， 40（11）： 1788-1791.
14	LIN C H， YUDA Y， WONG M H， et al. Vertical Ga₂O₃ Schottky barrier diodes with guard ring formed by nitrogen-ion implantation［J］. IEEE Electron Device Letters， 2019， 40（9）： 1487-1490.
15	HU Z Z， LV Y J， ZHAO C Y， et al. Beveled fluoride plasma treatment for vertical β-Ga₂O₃ Schottky barrier diode with high reverse blocking voltage and low turn-on voltage［J］. IEEE Electron Device Letters， 2020， 41（3）： 441-444.
16	ZHANG Y N， ZHANG J C， FENG Z Q， et al. Impact of implanted edge termination on vertical β-Ga₂O₃ Schottky barrier diodes under OFF-state stressing［J］. IEEE Transactions on Electron Devices， 2020， 67（10）： 3948-3953.
17	HAN Z， JIAN G Z， ZHOU X Z， et al. 2.7 kV low leakage vertical PtO _x /β-Ga₂O₃ Schottky barrier diodes with self-aligned mesa termination［J］. IEEE Electron Device Letters， 2023， 44（10）： 1680-1683.
18	DONG P F， ZHANG J C， YAN Q L， et al. 6 kV/3.4 mΩ·cm² vertical β-Ga₂O₃ Schottky barrier diode with BV²/R_on，sp performance exceeding 1-D unipolar limit of GaN and SiC［J］. IEEE Electron Device Letters， 2022， 43（5）： 765-768.
19	KONISHI K， GOTO K， MURAKAMI H， et al. 1-kV vertical Ga₂O₃ field-plated Schottky barrier diodes［J］. Applied Physics Letters， 2017， 110（10）： 103506.
20	YANG J C， REN F， TADJER M， et al. 2 300 V reverse breakdown voltage Ga₂O₃ Schottky rectifiers［J］. ECS Journal of Solid State Science and Technology， 2018， 7（5）： Q92-Q96.
21	HU Z Y， NOMOTO K， LI W S， et al. Enhancement-mode Ga₂O₃ vertical transistors with breakdown voltage >1 kV［J］. IEEE Electron Device Letters， 2018， 39（6）： 869-872.
22	ROY S， BHATTACHARYYA A， RANGA P， et al. High-k oxide field-plated vertical （001） β-Ga₂O₃ Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm² ［J］. IEEE Electron Device Letters， 2021， 42（8）： 1140-1143.
23	QIN Y， XIAO M， PORTER M， et al. 10-kV Ga₂O₃ charge-balance Schottky rectifier operational at 200 ℃［J］. IEEE Electron Device Letters， 2023， 44（8）： 1268-1271.
24	LV Y J， WANG Y G， FU X C， et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm or a 5 A/700 V handling capabilities［J］. IEEE Transactions on Power Electronics， 2021， 36（6）： 6179-6182.
25	YAN Q L， GONG H H， ZHANG J C， et al. β-Ga₂O₃ hetero-junction barrier Schottky diode with reverse leakage current modulation and BV²/R_on，sp value of 0.93 GW/cm² ［J］. Applied Physics Letters， 2021， 118（12）： 122102.
26	ZHANG J C， DONG P F， DANG K， et al. Ultra-wide bandgap semiconductor Ga₂O₃ power diodes［J］. Nature Communications， 2022， 13（1）： 3900.
27	YAN Q L， GONG H H， ZHOU H， et al. Low density of interface trap states and temperature dependence study of Ga₂O₃ Schottky barrier diode with p-NiO _x termination［J］. Applied Physics Letters， 2022， 120（9）： 092106.
28	WANG C L， YAN Q L， ZHANG C Q， et al. β-Ga₂O₃ lateral Schottky barrier diodes with > 10 kV breakdown voltage and anode engineering［J］. IEEE Electron Device Letters， 2023， 44（10）： 1684-1687.
29	WONG M H， SASAKI K， KURAMATA A， et al. Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V［J］. IEEE Electron Device Letters， 2016， 37（2）： 212-215.
30	ZENG K， VAIDYA A， SINGISETTI U. 1.85 kV breakdown voltage in lateral field-plated Ga₂O₃ MOSFETs［J］. IEEE Electron Device Letters， 2018， 39（9）： 1385-1388.
31	LV Y J， ZHOU X Y， LONG S B， et al. Source-field-plated β-Ga₂O₃ MOSFET with record power figure of merit of 50.4 MW/cm² ［J］. IEEE Electron Device Letters， 2019， 40（1）： 83-86.
32	TETZNER K， BAHAT TREIDEL E， HILT O， et al. Lateral 1.8 kV β-Ga₂O₃ MOSFET with 155 MW/cm² power figure of merit［J］. IEEE Electron Device Letters， 2019， 40（9）： 1503-1506.
33	LV Y J， LIU H Y， ZHOU X Y， et al. Lateral β-Ga₂O₃ MOSFETs with high power figure of merit of 277 MW/cm² ［J］. IEEE Electron Device Letters， 2020， 41（4）： 537-540.
34	FENG Z Q， CAI Y C， LI Z， et al. Design and fabrication of field-plated normally off β-Ga₂O₃ MOSFET with laminated-ferroelectric charge storage gate for high power application［J］. Applied Physics Letters， 2020， 116（24）： 243503.
35	KALARICKAL N K， XIA Z B， HUANG H L， et al. β-（Al_0.18Ga_0.82）₂O₃/Ga₂O₃ double heterojunction transistor with average field of 5.5 MV/cm［J］. IEEE Electron Device Letters， 2021， 42（6）： 899-902.
36	WANG C L， GONG H H， LEI W N， et al. Demonstration of the p-NiO _x /n-Ga₂O₃ heterojunction gate FETs and diodes with BV²/R_on，sp figures of merit of 0.39 GW/cm² and 1.38 GW/cm² ［J］. IEEE Electron Device Letters， 2021， 42（4）： 485-488.
37	WANG C L， YAN Q L， SU C X， et al. Demonstration of the β-Ga₂O₃ MOS-JFETs with suppressed gate leakage current and large gate swing［J］. IEEE Electron Device Letters， 2023， 44（3）： 380-383.
38	CHABAK K D， MCCANDLESS J P， MOSER N A， et al. Recessed-gate enhancement-mode β-Ga₂O₃ MOSFETs［J］. IEEE Electron Device Letters， 2018， 39（1）： 67-70.
39	CHABAK K D， MOSER N， GREEN A J， et al. Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native （100） β-Ga₂O₃ substrate with high breakdown voltage［J］. Applied Physics Letters， 2016， 109（21）： 213501.
40	LIU H Y， WANG Y G， LV Y J， et al. 10-kV lateral β-Ga₂O₃ MESFETs with B ion implanted planar isolation［J］. IEEE Electron Device Letters， 2023， 44（7）： 1048-1051.
41	MOSER N， LIDDY K， ISLAM A， et al. Toward high voltage radio frequency devices in β-Ga₂O₃ ［J］. Applied Physics Letters， 2020， 117（24）： 242101.
42	ZHOU H. GaN MOS devices with atomic layer epitaxy dielectric and its next generation high power beta-Ga₂O₃ on insulators FETs［D］. West Lafayette： Purdue University， 2017.
43	TOMM Y， REICHE P， KLIMM D， et al. Czochralski grown Ga₂O₃ crystals［J］. Journal of Crystal Growth， 2000， 220（4）： 510-514.
44	GALAZKA Z， UECKER R， IRMSCHER K， et al. Czochralski growth and characterization of β-Ga₂O₃ single crystals［J］. Crystal Research and Technology， 2010， 45（12）： 1229-1236.
45	GALAZKA Z， IRMSCHER K， UECKER R， et al. On the bulk β-Ga₂O₃ single crystals grown by the Czochralski method［J］. Journal of Crystal Growth， 2014， 404： 184-191.
46	GALAZKA Z， UECKER R， KLIMM D， et al. Scaling-up of bulk β-Ga₂O₃single crystals by the czochralski method［J］. ECS Journal of Solid State Science and Technology， 2017， 6（2）： Q3007-Q3011.
47	HIGASHIWAKI M， JESSEN G H. Guest editorial： the dawn of gallium oxide microelectronics［J］. Applied Physics Letters， 2018， 112（6）： 060401.
48	FU B， MU W X， ZHANG J， et al. A study on the technical improvement and the crystalline quality optimization of columnar β-Ga₂O₃ crystal growth by an EFG method［J］. CrystEngComm， 2020， 22（30）： 5060-5066.
49	FU B， JIAN G Z， MU W X， et al. Crystal growth and design of Sn-doped β-Ga₂O₃： morphology， defect and property studies of cylindrical crystal by EFG［J］. Journal of Alloys and Compounds， 2022， 896： 162830.
50	HOSHIKAWA K， OHBA E， KOBAYASHI T， et al. Growth of β-Ga₂O₃ single crystals using vertical Bridgman method in ambient air［J］. Journal of Crystal Growth， 2016， 447： 36-41.
51	HOSHIKAWA K， KOBAYASHI T， MATSUKI Y， et al. 2-inch diameter （100） β-Ga₂O₃ crystal growth by the vertical Bridgman technique in a resistance heating furnace in ambient air［J］. Journal of Crystal Growth， 2020， 545： 125724.
52	OHBA E， KOBAYASHI T， TAISHI T， et al. Growth of （100），（010） and （001） β-Ga₂O₃ single crystals by vertical Bridgman method［J］. Journal of Crystal Growth， 2021， 556： 125990.
53	ZHANG J G， LI B， XIA C T， et al. Growth and spectral characterization of β-Ga₂O₃ single crystals［J］. Journal of Physics and Chemistry of Solids， 2006， 67（12）： 2448-2451.
54	ZHANG J G， LI B， XIA C T， et al. Single crystal β-Ga₂O₃∶ Cr grown by floating zone technique and its optical properties［J］. Science in China Series E： Technological Sciences， 2007， 50（1）： 51-56.
55	NOH J， ALAJLOUNI S， TADJER M J， et al. High performance： Ga₂O₃ nano-membrane field effect transistors on a high thermal conductivity diamond substrate［J］. IEEE Journal of the Electron Devices Society， 2019， 7： 914-918.
56	XU W H， YOU T G， MU F W， et al. Thermodynamics of ion-cutting of β-Ga₂O₃ and wafer-scale heterogeneous integration of a β-Ga₂O₃ thin film onto a highly thermal conductive SiC substrate［J］. ACS Applied Electronic Materials， 2022， 4（1）： 494-502.
57	LIN C H， HATTA N， KONISHI K， et al. Single-crystal-Ga₂O₃/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface［J］. Applied Physics Letters， 2019， 114（3）： 032103.
58	XU W H， ZHANG Y H， HAO Y， et al. First demonstration of waferscale heterogeneous integration of Ga₂O₃ MOSFETs on SiC and Si substrates by ion-cutting process［C］// 2019 IEEE International Electron Devices Meeting （IEDM）. December 7-11， 2019. FranciscoSan， CA， USA. IEEE， 2019： 12. 5.1-12.5.4.
59	XU W H， YOU T G， WANG Y B， et al. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga₂O₃ thin film on SiC［J］. Fundamental Research， 2021， 1（6）： 691-696.
60	XIAO M， WANG B Y， LIU J C， et al. Packaged Ga₂O₃ Schottky rectifiers with over 60-a surge current capability［J］. IEEE Transactions on Power Electronics， 2021， 36（8）： 8565-8569.
61	GREEN A J， CHABAK K D， BALDINI M， et al. β-Ga₂O₃ MOSFETs for radio frequency operation［J］. IEEE Electron Device Letters， 2017， 38（6）： 790-793.
62	SINGH M， CASBON M A， UREN M J， et al. Pulsed large signal RF performance of field-plated Ga₂O₃ MOSFETs［J］. IEEE Electron Device Letters， 2018， 39（10）： 1572-1575.
63	CHABAK K D， WALKER D E， GREEN A J， et al. Sub-micron gallium oxide radio frequency field-effect transistors［C］// 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications （IMWS-AMP）. July 16-18， 2018， Ann Arbor， MI， USA. IEEE， 2018： 1-3.
64	XIA Z B， XUE H， JOISHI C， et al. β-Ga₂O₃ delta-doped field-effect transistors with current gain cutoff frequency of 27 GHz［J］. IEEE Electron Device Letters， 2019， 40（7）： 1052-1055.
65	KAMIMURA T， NAKATA Y， HIGASHIWAKI M. Delay-time analysis in radio-frequency β-Ga₂O₃ field effect transistors［J］. Applied Physics Letters， 2020， 117（25）： 253501.
66	MOSER N A， ASEL T， LIDDY K J， et al. Pulsed power performance of β-Ga₂O₃ MOSFETs at L-band［J］. IEEE Electron Device Letters， 2020， 41（7）： 989-992.
67	LV Y J， LIU H Y， WANG Y G， et al. Oxygen annealing impact on β-Ga₂O₃ MOSFETs： improved pinch-off characteristic and output power density［J］. Applied Physics Letters， 2020， 117（13）： 133503.
68	YU X X， GONG H H， ZHOU J J， et al. RF performance enhancement in sub-μm scaled β-Ga₂O₃ tri-gate FinFETs［J］. Applied Physics Letters， 2022， 121（7）： 072102.
69	YU X X， GONG H H， ZHOU J J， et al. High-voltage β-Ga₂O₃ RF MOSFETs with a shallowly-implanted 2DEG-like channel［J］. IEEE Electron Device Letters， 2023， 44（7）： 1060-1063.
70	SAHA C N， VAIDYA A， BHUIYAN A F M A U， et al. Scaled β-Ga₂O₃ thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX［J］. Applied Physics Letters， 2023， 122（18）： 182106.
71	SAHA C N， VAIDYA A， NIPU N J， et al. Thin channel Ga₂O₃ MOSFET with 55 GHz f_MAX and >100 V breakdown［J］. Applied Physics Letters， 2024， 125（6）： 062101.
72	WANG X C， LU X L， HE Y L， et al. Quasi-2D high mobility channel E-mode β-Ga₂O₃ MOSFET with Johnson FOM of 7.56 THz·V［J］. Applied Physics Letters， 2024， 125（6）： 063505.
73	YU X X， XU W H， WANG Y B， et al. Heterointegrated Ga₂O₃-on-SiC RF MOSFETs with f_T/f_max of 47/51 GHz by ion-cutting process［J］. IEEE Electron Device Letters， 2023， 44（12）： 1951-1954.
74	ZHOU M， ZHOU H， HUANG S， et al. 1.1 A/mm 1.1 A/mm ß-Ga₂O₃-on-SiC RF MOSFETs with 2.3 W/mm P_out and 30% PAE at 2 GHz and f_T/f_max of 27.6/57 GHz［C］// 2023 International Electron Devices Meeting （IEDM）. December 9-13， 2023， San Francisco， CA， USA. IEEE， 2023： 1-4.
75	ZHOU M， ZHOU H， MENGWEI S， et al. 71 GHz-fmax β-Ga₂O₃-on-SiC RF power MOSFETs with record P_out=3.1 W/mm and PAE=50.8% at 2 GHz， P_out=2.3 W/mm at 4 GHz， and low microwave noise figure［C］// 2024 IEEE Symposium on VLSI Technology and Circuits （VLSI Technology and Circuits）. June 16-20， 2024， Honolulu， HI， USA. IEEE， 2024： 1-2.
76	ZHANG Y， NEAL A， XIA Z， et al. Demonstration of high mobility and quantum transport in modulation-doped β-（Al _x Ga_1- _x ）₂O₃/Ga₂O₃ heterostructures［J］. Applied Physics Letters， 2018， 112（17）.
77	ZHANG Y W， XIA Z B， MCGLONE J， et al. Evaluation of low-temperature saturation velocity in β-（Al _x Ga_1- _x ）₂O₃/Ga₂O₃ modulation-doped field-effect transistors［J］. IEEE Transactions on Electron Devices， 2019， 66（3）： 1574-1578.
78	JESSEN G H， FITCH R C， GILLESPIE J K， et al. Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices［J］. IEEE Transactions on Electron Devices， 2007， 54（10）： 2589-2597.
79	SHINOHARA K， REGAN D， MILOSAVLJEVIC I， et al. Electron velocity enhancement in laterally scaled GaN DH-HEMTs with f_T of 260 GHz［J］. IEEE Electron Device Letters， 2011， 32（8）： 1074-1076.
80	VAIDYA A， SAHA C N， SINGISETTI U. Enhancement mode β-（Al _x Ga_1- _x ）₂O₃/Ga₂O₃ heterostructure FET （HFET） with high transconductance and cutoff frequency［J］. IEEE Electron Device Letters， 2021， 42（10）： 1444-1447.
81	SAHA C N， VAIDYA A， SINGISETTI U. Temperature dependent pulsed IV and RF characterization of β-（Al _x Ga_1- _x ）₂O₃/Ga₂O₃ hetero-structure FET with ex situ passivation［J］. Applied Physics Letters， 2022， 120（17）： 7.
82	OHTSUKI T， KAMIMURA T， HIGASHIWAKI M. Suppression of drain current leakage and short-channel effect in lateral Ga₂O₃ RF MOSFETs using （Al _x Ga_1- _x ）₂O₃ back-barrier［J］. IEEE Electron Device Letters， 2023， 44（11）： 1829-1832.
83	DHEENAN A V， MCGLONE J F， KALARICKAL N K， et al. β-Ga₂O₃ MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy［J］. Applied Physics Letters， 2022， 121（11）： 113503.
84	ATMACA G， CHA H Y. Enhancement mode β-（Al_0.19Ga_0.81）₂O₃/Ga₂O₃ HFETs with superlattice back-barrier layer［J］. Micro and Nanostructures， 2024， 189： 207802.

[1]	LI Wenjing, TIAN Junhong, LI Rensheng, LI Jianing, SUN Xiaowei. Improving Low-Frequency Sound Transmission Loss of Double-Layer Panels with a Perforated Sandwich Structure with Porous Lining [J]. Journal of Synthetic Crystals, 2025, 54(4): 581-588.
[2]	HAN Yu, JIAO Teng, YU Han, SAI Qinglin, CHEN Duanyang, LI Zhen, LI Yihan, ZHANG Zhao, DONG Xin. Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga₂O₃ Thin Films Grown by MOCVD [J]. Journal of Synthetic Crystals, 2025, 54(3): 438-444.
[3]	CHEN Junhong, HU Jianwen, WEI Zhongming. Research Progress of Gallium Oxide Micro/Nano Structure-Based Detectors [J]. Journal of Synthetic Crystals, 2025, 54(3): 491-510.
[4]	WANG Junlan, LI Zaoyang, YANG Yao, QI Chongchong, LIU Lijun. Evaluation and Control of Crystallization Interface Deformation in the Growth of 6-Inch β-Ga₂O₃ Crystals by EFG Method [J]. Journal of Synthetic Crystals, 2025, 54(3): 396-406.
[5]	YIN Changshuai, MENG Biao, LIANG Kang, CUI Hanwen, LIU Sheng, ZHANG Zhaofu. Comparative Study on Thermal Field of Ga₂O₃ Single Crystal Growth Simulated by Different Thermal Radiation Models [J]. Journal of Synthetic Crystals, 2025, 54(3): 386-395.
[6]	XIE Yinfei, HE Yang, LIU Weiye, XU Wenhui, YOU Tiangui, OU Xin, GUO Huaixin, SUN Huarui. Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices [J]. Journal of Synthetic Crystals, 2025, 54(2): 290-311.
[7]	SHAO Shuangyao, YANG Shuo, FENG Huayu, JIA Zhitai, TAO Xutang. Research Progress of Gallium Oxide Avalanche Photodetectors [J]. Journal of Synthetic Crystals, 2025, 54(2): 276-289.
[8]	LI Titao, LU Yaoping, CHEN Duanyang, QI Hongji, ZHANG Haizhong. Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth [J]. Journal of Synthetic Crystals, 2025, 54(2): 219-226.
[9]	YU Xinxin, SHEN Rui, YU Han, ZHANG Zhao, SAI Qinglin, CHEN Duanyang, YANG Zhenni, QIAO Bing, ZHOU Likun, LI Zhonghui, DONG Xin, ZHANG Hongliang, QI Hongji, CHEN Tangsheng. β-Ga₂O₃ Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD [J]. Journal of Synthetic Crystals, 2025, 54(2): 312-318.
[10]	LI Xiangyu, HAN Hua, WANG Yang, YAO Xiayuan. Design of THz Metamaterial Sensors Insensitive to Incidence Angle and Polarization [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2025, 54(1): 59-68.
[11]	DOU Renqin, LIU Yao, LUO Jianqiao, WANG Xiaofei, LIU Wenpeng, ZHANG Qingli. Spectral Analysis and Thermal Properties of Nd∶GdYAG Laser Crystal [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1504-1511.
[12]	WU Qiulin, FENG Xinkai, CHEN Huaixi, CHEN Jiaying, MA Cuiping, LIANG Wanguo. A 561 nm Fundamental Mode Laser Based on a Compact Nd∶YAG/PPMgLN Module [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1512-1518.
[13]	HE Xiaomin, TANG Peizheng, LIU Ruoqi, SONG Xinyang, HU Jichao, SU Han. Simulation Study on Frequency Characteristics of AlN/β-Ga₂O₃ HEMT [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1361-1368.
[14]	CHEN Jihu, LU Yani. Effect of Powder Reduction on the Thermoelectric Performance of Cu₂Se [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1464-1470.
[15]	LI Haoqing, SU Yu. Phase Field Study on Domain Structure Evolution of BaTiO₃ Nano Single Crystal Thin Films under Applied Electric Field [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(7): 1136-1149.

Research Progress on β-Ga₂O₃ Radio Frequency Power Devices

RichHTML

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 17

References 84

Related Articles 15

Recommended Articles

Metrics

Comments