| [1] |
SHU Jun, NIE Lingda, ZHAO Peng, XUE Longfei.
Crystal Quality of Different Surface Morphologies in Sapphire by EFG Method
[J]. Journal of Synthetic Crystals, 2026, 55(2): 281-290.
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| [2] |
AI Jincai, YANG Pingping, ZHAO Ziwei, GAO Mangmang.
Effect of Thermal Shield Structure on the Growth of 400 mm Diameter Czochralski Monocrystalline Silicon
[J]. Journal of Synthetic Crystals, 2026, 55(1): 68-76.
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| [3] |
ZHU Litao, LIU Lei, YUAN Shuai, ZHOU Shenglang, ZHANG Huali, WANG Chen, GAO Yu, CAO Jianwei, YU Xuegong, YANG Deren.
Effect of Cable Diameter on Growth Stability of Large-Size Czochralski Silicon Crystals
[J]. Journal of Synthetic Crystals, 2025, 54(6): 942-948.
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| [4] |
LI Xiang, CHEN Gen, SHEN Jie, ZHU Minghui.
Effect of Substrate Type on Stress and Crystallinity of Growing Polycrystalline Diamond Film
[J]. Journal of Synthetic Crystals, 2025, 54(6): 986-996.
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| [5] |
YANG Wenwen, LU Wei, XIE Hui, LIU Gang, LYU Xinyu, BAI Yihan, LI Chenhui, PAN Jiaoqing, ZHAO Youwen, SHEN Guiying.
Growth and Performance of Low-Dislocation 6-Inch GaSb Single Crystal
[J]. Journal of Synthetic Crystals, 2025, 54(5): 784-792.
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| [6] |
ZHU Xingjie, ZHANG Ping, ZUO Dunwen.
Effect of Residual Stress and Electric Field on Indentation Hardness of 4H-SiC Surface
[J]. Journal of Synthetic Crystals, 2025, 54(4): 560-568.
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| [7] |
YIN Changshuai, MENG Biao, LIANG Kang, CUI Hanwen, LIU Sheng, ZHANG Zhaofu.
Comparative Study on Thermal Field of Ga2O3 Single Crystal Growth Simulated by Different Thermal Radiation Models
[J]. Journal of Synthetic Crystals, 2025, 54(3): 386-395.
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| [8] |
YANG Wenjuan, BU Yuzhe, SAI Qinglin, QI Hongji.
Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method
[J]. Journal of Synthetic Crystals, 2025, 54(3): 414-419.
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| [9] |
XU Binjie, CHEN Pengyang, LU Sheng’ou, XUAN Lingling, WANG Anqi, WANG Fan, PI Xiaodong, YANG Deren, HAN Xuefeng.
Effects of the Temperature Gradient on the Fracture Stress of Large-Sized SiC Grown by PVT Method
[J]. Journal of Synthetic Crystals, 2025, 54(12): 2083-2100.
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| [10] |
DONG Haoming, FU Weiling, CHENG Xiyue, DENG Shuiquan.
Simulation of Phase Transition and Stress Evolution in Laser-Irradiated KDP Crystals: Analysis of Damage Mechanisms
[J]. Journal of Synthetic Crystals, 2025, 54(10): 1823-1835.
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| [11] |
ZHAO Qingsong, NIU Xiaodong, GU Xiaoying, DI Juqing.
Growth and Properties of Large Size Ultra High Purity Germanium Single Crystals
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2025, 54(1): 34-39.
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| [12] |
QIN Zuoyan, JIN Lei, LI Wenliang, TAN Jun, HE Guangze, WU Honglei.
Regulation of AlN Crystal Growth Mode by PVT Method
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1542-1549.
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| [13] |
YU Hang, ZHAO Qi, QI Xiaofang, MA Wencheng, XU Yongkuan, HU Zhanggui.
Effect of Internal Radiation Heat Transfer on the Thermal Stress in Growing Ti∶Sapphire Crystal by Heat Exchanger Method
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(7): 1212-1221.
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| [14] |
LIU Ting, LI Xianhao, GUO Yaojun, KANG Sen, LU Yarong, HE Lijun.
Nanoindentation Constitutive Equation of Sapphire Crystal
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(6): 982-990.
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| [15] |
CHENG Jiahui, YANG Lei, WANG Jinnan, GONG Chunsheng, ZHANG Zesheng, JIAN Jikang.
Molten KOH Etching Behaviors of Heavily Doped P-Type SiC
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(5): 773-780.
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