Table of Content

20 August 2025, Volume 54 Issue 8

Previous Issue    Next Issue

Reviews

Research Progress on Structure Dimensional Regulation of Metal Halide Perovskite Single Crystal and Their Direct-Type X-Ray Detection Performance

DAI Yizhi, MA Lin, ZHANG Wenjie, LEI Wenxuan, XIAO Wen, ZHANG Junqi, WANG Wenyu, ZHANG Jinxing, LIU Yucheng

2025, 54(8):  1305-1329.  doi:10.16553/j.cnki.issn1000-985x.2025.0108

Asbtract ( 136 )   HTML ( 10)   PDF (13830KB) ( 69 )  

Figures and Tables | References | Related Articles | Metrics

X-ray detection has a wide application in critical fields such as medical diagnostics， security screening， industrial non-destructive testing， and environmental monitoring. Metal halide perovskite single crystals have emerged as promising candidates for developing low-cost， high-performance X-ray detection systems due to their compositional tunability， strong X-ray attenuation coefficients， high carrier mobility-lifetime product， and low-temperature solution-processable growth. This review focuses on the crystal structure dimensional regulation of metal halide perovskite single crystal and their effect on X-ray detection performance，and summarizing recent advances in perovskite single crystal-based direct X-ray detectors. Through a detailed analysis of crystal growth methods， semiconductor properties， and X-ray detection performance across perovskites with various dimensionalities， this review unveils the intrinsic relationship between crystal structural dimensionality and photoelectronic detection capabilities. Based on these discussions， challenges currently faced by perovskite single crystal X-ray detectors are critically examined. Future research directions are proposed to guide the design and growth of large-size high-quality perovskite single crystals and the realization of stable， high-sensitivity X-ray detection systems. This review provides both theoretical insights and practical guidelines for advancing perovskite-based X-ray detection technologies toward practical applications.

Metal Halide Perovskite Single Crystal Scintillators for Radiation Detection

ZHANG Leilei, XUE Zexu, SUN Lian, LIU Yang, WANG Lukai, WANG Zungang

2025, 54(8):  1330-1351.  doi:10.16553/j.cnki.issn1000-985x.2025.0094

Asbtract ( 207 )   HTML ( 9)   PDF (8750KB) ( 94 )  

Figures and Tables | References | Related Articles | Metrics

Scintillators are materials that emit light upon excitation by particle radiation or ionizing rays. After more than a century of development， they have been widely applied in fields such as high-energy physics， astrophysics， radiation imaging， and homeland security. Most commercially available scintillator detector materials， such as NaI∶Tl and LaBr₃∶Ce， are ion-doped luminescent scintillators. These materials suffer from drawbacks including hygroscopicity， self-radioactive background， and high brittleness， which increasingly fail to meet the demands of complex radiation detection applications. Metal halide perovskite scintillation materials， leveraging their structural tunability and chemical composition diversity， demonstrate superior performance compared to traditional inorganic scintillators. Particularly， their single crystals exhibit advantages including three-dimensional long-range order， absence of grain boundaries， low defect density， excellent environmental stability， and low cost， positioning them as one of the most competitive scintillator materials in recent years. This article comprehensively summarizes the research progress of metal halide perovskite scintillator single crystals in radiation detection from perspectives of molecular structure， material classification， and radiation characteristics. It also provides an outlook on potential optimization directions in this field， aiming to enhance readers' comprehensive understanding of these materials， and address challenges in selecting and structurally optimizing novel scintillator crystals.

Research Progress on β-Ga₂O₃ Nanobelt Field-Effect Transistors and Solar-Blind Ultraviolet Photodetectors

LI Xiaoxu, SHI Caiyu, SHEN Lei, ZENG Guang, LI Xiaoxi, CHEN Yuchang, LU Hongliang

2025, 54(8):  1352-1368.  doi:10.16553/j.cnki.issn1000-985x.2025.0061

Asbtract ( 93 )   HTML ( 3)   PDF (6289KB) ( 29 )  

Figures and Tables | References | Related Articles | Metrics

β-phase gallium oxide （β-Ga₂O₃） has widespread applications in various fields such as high-temperature， high-pressure， high-frequency devices， as well as solar-blind ultraviolet photodetectors due to its direct and ultrawide bandgap （~4.9 eV）， high breakdown electric field （~9 MV/cm）， and excellent thermal and chemical stability. The β-Ga₂O₃ nanobelts mechanically exfoliated from β-Ga₂O₃ single crystals serve as channels for exploring new device structures， offering significant flexibility and potentially reducing costs. In recent years， substantial progress has been made in the research of β-Ga₂O₃ nanobelt field effect transistors and solar-blind ultraviolet photodetectors. However， the overall device performance remains limited and unable to meet commercialization demands， particularly in terms of low mobility and low responsivity. In this work， the basic properties of β-Ga₂O₃ materials are introduced. Then， the current research status of β-Ga₂O₃ nanobelt field effect transistors and solar-blind ultraviolet photodetectors is summarized and analyzed. Finally， challenges and difficulties faced by β-Ga₂O₃-based devices are highlighted， including issues related to interface optimization and the lack of systematic studies on device reliability.

Growth Technology of Ultraviolet Calcium Fluoride Crystals

WANG Bin, WANG Xiaoli, HOU Yueyun, LIU Jiao, LIU Shan

2025, 54(8):  1369-1378.  doi:10.16553/j.cnki.issn1000-985x.2024.0316

Asbtract ( 169 )   HTML ( 22)   PDF (1364KB) ( 69 )  

Figures and Tables | References | Related Articles | Metrics

Calcium fluoride （CaF₂） crystals are key materials for deep ultraviolet lithography due to their extremely high UV transmittance （＞90%@157 nm）， high laser damage threshold， and low refractive index. With the continuous pursuit of high-precision and high-resolution lithography technology in the semiconductor industry， high-quality calcium fluoride crystals and their growth have become the focus of attention. In this paper， the structure and performance characteristics of CaF₂ crystals， as well as common crystal defects， are introduced， and its application requirements in lithography systems are listed. Subsequently， the growth methods of ultraviolet CaF₂ crystals were reviewed， including the lifting method， the crucible descending method， the temperature ladder method and the plate method. Based on the existing research progress， the effects of raw material purity and growth process in reducing crystal defects and enabling the directional growth of high-quality ultraviolet CaF₂ crystals were discussed. Finally， the future of crystal growth technology is prospected.

Research Progress on Modulating the Magnetocaloric Effect of Manganate Crystals under High Pressure

ZHU Yuge, CHENG Xuyi, GAO Tian

2025, 54(8):  1379-1387.  doi:10.16553/j.cnki.issn1000-985x.2024.0324

Asbtract ( 56 )   HTML ( 1)   PDF (1835KB) ( 18 )  

Figures and Tables | References | Related Articles | Metrics

In the field of condensed matter physics， with the continuous progress of high pressure experimental technique， it has become a practical and effective research path to investigate the physical properties of materials under extreme conditions such as high temperature， high pressure and strong magnetic field. The crystal structure and physicochemical properties of manganates are relatively stable， and they have the advantage of lower cost. By adjusting the Curie temperature， manganates can exhibit suitable magnetocaloric effects near room temperature. This paper summarizes the researches of magnetocaloric effect of various bandwidth types of doped manganate materials under extreme conditions in recent years， where the role of pressure is emphasized in regulating the intensity and temperature of magnetic ordering state， the nature of magnetic phase transitions and the magnetocaloric properties of magnetic materials.

Prospects for the Preparation and Application of Boron Nitride Nanotubes

HE Shunyu, CHEN Xudan, YU Qiang, YAN Changzeng

2025, 54(8):  1388-1395.  doi:10.16553/j.cnki.issn1000-985x.2025.0031

Asbtract ( 87 )   HTML ( 3)   PDF (2053KB) ( 34 )  

Figures and Tables | References | Related Articles | Metrics

Boron nitride nanotubes （BNNTs） are a class of one-dimensional nanomaterials with unique structures and properties. Since their first synthesis in 1995， they have attracted widespread attention due to their excellent physical and chemical properties. The structure of BNNTs is similar to carbon nanotubes （CNTs）， but formed by alternating arrangement of boron and nitrogen atoms. This structure endows BNNTs with a series of unique properties， such as high chemical stability， good heat resistance， electrical insulation and high thermal conductivity. The synthesis of BNNTs plays an important role in their performance research and application development. In addition， based on its excellent physical and chemical properties， BNNTs have demonstrated unique application value in multiple fields. This article systematically reviews the research progress on BNNTs at home and abroad in recent years， with a focus on in-depth analysis of preparation processes such as arc discharge method， laser ablation method， ductile annealing method， chemical vapor deposition （CVD） method， and template synthesis method. It also explores the latest research progress of this material in applications such as neutron shielding， biomedical， optical devices， and thermal conductive materials.

Research Articles

Growth of 2~3 Inch Magnesium-Doped Near-Stoichiometric Ratio Lithium Tantalate Crystals

LIU Shouting, WEN Xujie, HAN Wenbin, LI Chenzhe, SONG Wei, CUI Jiangang, SONG Song, LI Yong, SUN Dehui, LIU Hong

2025, 54(8):  1396-1402.  doi:10.16553/j.cnki.issn1000-985x.2025.0044

Asbtract ( 125 )   HTML ( 6)   PDF (1687KB) ( 60 )  

Figures and Tables | References | Related Articles | Metrics

Magnesium-doped near-stoichiometric ratio lithium tantalate （MgO∶SLT） crystals exhibit significant application potential in ultraviolet single-photon detection and high-power frequency conversion laser， owning to their outstanding nonlinear optical property， large laser damage threshold， and high transmittance in the ultraviolet band at 270 nm. However， it is very difficult to grow the single crystal from lithium-rich raw materials due to lithium volatilization and compositional segregation. In this study， 2~3 inch （1 inch=2.54 cm） SLT and MgO∶SLT crystals were successfully grown by the optimized Czochralski method with a high-pressure ambient atmosphere or a flowing gas system. It was demonstrated that the SLT crystal has a lithium-tantalum component ratio of about 49∶51， which is higher than the lithium component content in conventional congruent lithium tantalate crystals. MgO∶SLT crystal grown from the same lithium-rich melt have a magnesium concentration of Mg/Ta molar ratio about 1.47%， and the effective segregation coefficient of magnesium reaches 1.69. MgO∶SLT crystal maintain an optical transmittance of more than 65% in a wide spectral range from 270 nm to 800 nm， and the coercive field reduce to 2.8 kV/mm. Meanwhile， the room-temperature thermal conductivity of MgO∶SLT crystals along the Z-axis reaches 7.34 W/（m·K）， which is about 61.7% higher than that of conventional magnesium doped congruent lithium tantalate crystals.

Impact of Selenium Addition on Electrical and Optical Properties of CdSe Single Crystal

DOU Ying, WANG Yingmin, GAO Yanzhao, CHENG Hongjuan

2025, 54(8):  1403-1409.  doi:10.16553/j.cnki.issn1000-985x.2025.0124

Asbtract ( 96 )   HTML ( 2)   PDF (1415KB) ( 37 )  

Figures and Tables | References | Related Articles | Metrics

In this paper， CdSe single crystals were grown by high-pressure Bridgman method with a seed. The properties of a series of Se-added single crystal CdSe were studied. The results show that the added selenium atom fills the selenium vacancies （V_Se）， which reduced Cd/Se mass ratio， and the position of Raman peak of the CdSe single crystals are not affected. Furthermore， electrical properties， optical properties and inclusion of Se-added CdSe single crystal were analyzed. The results indicate that after the selenium fills the V_Se， the free carrier concentration in CdSe single crystals reduces， the resistivity increases， the free carrier absorption of infrared photons is weakened， the structural stability of CdSe single crystals is improved， and the inclusion density reduces. The synergistic effect of these two factors improves the electrical and optical properties of CdSe single crystals. The resistivity increases to more than 10⁸ Ω·cm， and the infrared （IR） transmittance in 8~12 μm reaches to 69%. The research provides reference significance for the application of CdSe in long-wave IR solid-state lasers and other fields.

Polarization and Temperature Dependence of Low-Temperature Photoluminescence Spectra in Fe-Doped GaN Crystals

XIAO Jiexiang, YANG Chaopu, WANG Jianfeng, ZHANG Yumin, YI Juemin, XU Ke

2025, 54(8):  1410-1416.  doi:10.16553/j.cnki.issn1000-985x.2025.0043

Asbtract ( 135 )   HTML ( 7)   PDF (3366KB) ( 38 )  

Figures and Tables | References | Related Articles | Metrics

This article uses low-temperature photoluminescence spectra to study the polarization luminescence characteristics of Fe-doped GaN crystal non-polar m-plane near band edge DBE 1-LO， DBE_2e 1-LO， DBE 2-LO， DBE_2e 2-LO， DAP. The results show that five peaks on the surface all exhibit polarization anisotropy， and the peak intensity increases with the polarization angle. At low temperatures， the near band edge emission peaks of Fe-doped GaN single crystals are all partially polarized light and exhibit different polarization characteristics. The linear polarization degree of the exciton peak is much greater than that of the phonon companion line， with a linear polarization degree of 35.1% and significant polarization characteristics. Its linear polarization degree is 6.22 and 16.56 times that of the first-order and second-order phonon companion lines， respectively. As the Fe doping concentration increases， the peak positions related to Fe³⁺ all show a blue shift， and the peak positions are not significantly affected by temperature. This study contributes to exploring the luminescence mechanism of Fe-doped GaN crystal and enhancing its application in related polarized optoelectronic devices.

Effect of AlN Dielectric Layer on Growth of Diamond Passivation Film on GaN Surface

LIANG Lifeng, YU Xinxin, LI Zhonghui, LIU Jinlong, LI Chengming, WANG Xinhua, WEI Junjun

2025, 54(8):  1417-1425.  doi:10.16553/j.cnki.issn1000-985x.2025.0030

Asbtract ( 91 )   HTML ( 1)   PDF (3650KB) ( 28 )  

Figures and Tables | References | Related Articles | Metrics

The growth of diamond passivation film on GaN surface can be used to improve the heat transfer ability of devices， and enhance the power characteristics and reliability of devices. The dielectric layer between GaN and diamond layers is crucial for achieving high-quality diamond on GaN surface. This study used atomic layer deposition （ALD） technology to pre-deposit a 10 nm crystalline/amorphous mixed AlN dielectric layer on the surface of GaN， and achieved high-density electrostatic self-assembly seeding on the AlN layer through surface terminal controlled diamond suspension； subsequently， an optimized microwave plasma chemical vapor deposition （MPCVD） process was used to grow nanocrystalline diamond（NCD）films with a thickness of approximately 120 nm. The surface oxygen terminal regulated nanodiamond suspension can achieve high-density seeding on the surface of AlN dielectric layer. Combined with gradient methane MPCVD diamond growth process， NCD thin films with high crystallinity， low roughness （Ra=15.2 nm）， and low residual stress （0.84 GPa） were prepared. Time domain thermal reflection（TDTR）measurements indicate that the thermal conductivity of NCD film is approximately 123.85 W·m^-1·K^-1. The effective thermal boundary resistance （TBR_eff） between GaN and NCD is （9.78±0.27） m²·K·GW^-1. Transmission electron microscopy （TEM） analysis shows that， AlN dielectric layer effectively protects GaN from plasma etching and achieves a smooth interface between diamond and GaN. This study shows that using thin ALD AlN as the dielectric layer for growing diamond on GaN surface can achieve electrostatic self-assembly with oxygen terminated diamond seeds， thereby increasing diamond nucleation density. Then， through gradient methane diamond deposition process， high-quality NCD films can be deposited on GaN and the thermal boundary resistance between diamond and GaN can be reduced.

First-Principles Study on the Electrical Properties of Co-Doped β-Ga₂O₃

WANG Chun, WANG Kun, SONG Xiangman, REN Lin, ZHANG Hao

2025, 54(8):  1426-1432.  doi:10.16553/j.cnki.issn1000-985x.2025.0011

Asbtract ( 67 )   HTML ( 3)   PDF (3326KB) ( 27 )  

Figures and Tables | References | Related Articles | Metrics

In this study， the structural and electronic properties of three β-Ga₂O₃ systems， Mg-Al co-doped， F-Zn co-doped and N-Mg co-doped were investigated by first-principles calculations based on density functional theory， with the aim of obtaining high-performance P-type conductive β-Ga₂O₃ materials. The results indicate that the Mg-Al co-doped and F-Zn co-doped β-Ga₂O₃ remain direct bandgap semiconductors， while the N-Mg co-doped system becomes an indirect bandgap semiconductor. These systems exhibit relatively low formation energies. Among them， the Mg-Al co-doped β-Ga₂O₃ system exhibits the lowest formation energy， indicating better thermodynamic stability. In this system， the Mg-p and Al-p orbitals shift the valence band toward higher energy， crossing the Fermi level， making it the most promising candidate for P-type conductivity among the three systems.

Effect of Al_0.1Ga_0.9N Electron Blocking Layer on Optical Properties of In_0.26Ga_0.74N/GaN Multiple Quantum Wells

LIU Zhenhua, LIU Shengwei, WANG Yixin, SHAN Hengsheng

2025, 54(8):  1433-1440.  doi:10.16553/j.cnki.issn1000-985x.2024.0296

Asbtract ( 62 )   HTML ( 3)   PDF (2217KB) ( 19 )  

Figures and Tables | References | Related Articles | Metrics

This study focuses on the effect of Al_0.1Ga_0.9N electron blocking layer （EBL） on the optical properties of In_0.26Ga_0.74N/GaN multiple quantum wells （MQWs） materials. Through atomic force microscopy （AFM） characterization， it is found that the surface roughness of the InGaN material with the inserted Al_0.1Ga_0.9N EBL is significantly reduced from 94.42 nm to 54.72 nm， a reduction of 42.05%. High-resolution X-ray diffraction （HRXRD） tests show that the spiro dislocation and edge dislocation densities of the material have decreased by 13.39% and 45.53%， respectively， and the steepness of the trap-barrier interface has been significantly enhanced. The photoluminescence （PL） spectroscopic study shows that not only the full width at half maximum （FWHM） of the luminescence peaks of the material becomes narrower and the luminescence intensity is enhanced， but also the luminescence wavelength shows a certain degree of redshift. It is found that the insertion of Al_0.1Ga_0.9N EBL can effectively reduce the defect density of In_0.26Ga_0.74N/GaN multiple quantum wells materials， effectively reduce the non-radiative recombination efficiency， and then enhance the luminescence performance of the materials. This study provides a necessary experimental basis for the preparation of high-efficiency solar cells.

First-Principles Study on Oxidation of Methane to Methanol Catalyzed by Non-Stoichiometric Tungsten Oxide （WO_3-x）

QIN Jilong, LI Xiangyuan, ZHANG Lulu, LIU Jianxin, LI Rui

2025, 54(8):  1441-1453.  doi:10.16553/j.cnki.issn1000-985x.2025.0035

Asbtract ( 86 )   HTML ( 7)   PDF (11332KB) ( 45 )  

Figures and Tables | References | Related Articles | Metrics

The key challenge in the oxidation of methane to methanol is attributed to the efficient activation of CH₄ by catalysts. Non-stoichiometric WO_3-x （0<x<3）， recognized for its controllable oxygen vacancies along with structural stability and conductive advantages， has emerged as a research hotspot in novel catalytic materials. In this study， density functional theory （DFT） methods were employed to systematically investigate the catalytic performance of six distinct WO_3-x materials for oxidation of methane to methanol. The mechanisms were elucidated through comprehensive analyses of material structures， surface active sites， methane oxidation behaviors and electronic properties. The results reveal that the WO-terminated surface of the WO_2.72 catalyst demonstrates enhanced methane adsorption and activation capabilities， which are ascribed to its lower work function， hybridization between W 5d orbitals and CH₄ molecules， and the strong electron-donating capacity of W atomic states. Specifically， this surface exhibits a favorable CH₄ adsorption free energy （-0.62 eV） and dissociation free energy （-0.07 eV）. These findings provide theoretical guidance for exploring the application of WO_3-x catalysts in methane oxidation reactions.

Effect of Three-Stage Cooling Process on the Purification of Solar-Grade Polysilicon by Solvent Refining in Al-30%Si Alloy

TANG Hong, DI Jiahui, YANG Pingping, LI Shaomeng, SHI Yujie, HE Zhanwei, ZHAO Ziwei, GAO Mangmang

2025, 54(8):  1454-1462.  doi:10.16553/j.cnki.issn1000-985x.2025.0033

Asbtract ( 51 )   HTML ( 2)   PDF (3759KB) ( 4 )  

Figures and Tables | References | Related Articles | Metrics

During solvent refining for solar-grade polysilicon， the cooling process significantly influences the nucleation， crystal growth and impurity segregation of primary silicon. This study investigated the cooling process of Al-30%Si alloy over a temperature range of 900 ℃ to 600 ℃ and compared the effects of single-rate cooling and three-stage cooling processes on the morphology and impurity content of primary silicon. The main objective is to optimize the solvent refining process. The results indicate that， under the single-rate cooling process， a cooling rate of 1 ℃/min can significantly increase the primary silicon grain size， reduce the impurity content in the primary silicon， and improve the impurity removal rate. In contrast， under the three-stage cooling process， a nodal temperature close to the high-temperature region results in a larger grain size and improves the purity and yield of primary silicon. The best purification effect can be achieved when the nodal temperature is set at 700 ℃. In this case， the grain size of primary silicon is slightly lower， while the impurity content is comparable to that before optimization. At the same time， the optimized process achieves a 62.3% reduction in cooling duration and a 23.3% decrease in energy consumption. This study provides a potential strategy to fabricate solar-grade polysilicon using Al-Si solvent refining， which is of significant experiment accumulation.

Synthesis， Crystal Structure and Fluorescent Properties of a Lead-Based Coordination Polymer

LIANG Yinong, ZHANG Kaixin, XU Yarong, SUN Zan

2025, 54(8):  1463-1469.  doi:10.16553/j.cnki.issn1000-985x.2025.0026

Asbtract ( 68 )   HTML ( 4)   PDF (2353KB) ( 21 )  

Figures and Tables | References | Related Articles | Metrics

In this paper， a novel coordination polymer， ［Pb（PTPBA）₂（H₂O）］ _n （1）， was successfully synthesized using solvothermal method with 3-［2-（5-pyridin-4-yl-4H-［1，2，4］triazol-3-yl）-phenoxy］ benzoic acid （HPTPBA） and lead nitrate. The structure of 1 was characterized by elemental analysis， X-ray single crystal diffraction， X-ray powder diffraction， and infrared spectroscopy. The thermal stability and solid-state luminescence behavior of 1 were also studied. X-ray single crystal diffraction shows that 1 belongs to the triclinic crystal system P1 space group with lattice parameters of a=1.162 15 （2） nm， b=1.197 45 （2） nm， c=1.504 68 （2） nm and α = 109.007 0 （10）°， β = 90.487 0 （10） °， γ = 115.910 0 （10）°. The molecular formula is C₄₀H₂₈N₈O₇Pb. In the structure of 1， PTPBA^- ligands connect Pb ions to form one-dimensional chain structures， which can be extended into three-dimensional supramolecular structures through N—H…O hydrogen bonds and π…π stacking interactions. The maximum emission wavelength of 1 at an excitation wavelength of 322 nm is 550 nm. Fluorescence sensing experiments were conducted on 1， and it was found that 1 has high selectivity for p-NA （p-nitroaniline）. The quenching mechanism of 1 was explored， illustrating that the fluorescence quenching phenomena is mainly caused by competitive absorption.

Synthesis and Luminescent Properties of Mn⁴⁺-Doped Tetragonal-Phase CaLaGaO₄ Far-Red Emitting Phosphors

MA Zhongliang, DUAN Shuaiyi, ZHAO Lingling, LU Guihua, LI Yuqiang, LIU Yuxue, YANG Jian

2025, 54(8):  1470-1477.  doi:10.16553/j.cnki.issn1000-985x.2025.0029

Asbtract ( 57 )   HTML ( 4)   PDF (1834KB) ( 7 )  

Figures and Tables | References | Related Articles | Metrics

The development of novel far-red emitting Mn⁴⁺ doped oxide phosphors has emerged as a prominent research focus for phosphor-converted light-emitting diodes （pc-LEDs） in plant growth applications. In this study， tetragonal-phase CaLaGaO₄∶Mn⁴⁺ phosphors were successfully synthesized through a high-temperature solid-state reaction method， involving sequential thermal treatments at 600 ℃ for 3 h followed by sintering at 1 350 ℃ for 5 h in air atmosphere. The CaLaGaO₄∶0.4%Mn⁴⁺ phosphors can be excited by light at 250~600 nm. Under 366 nm UV excitation， the characteristic broadband emission centered at 705 nm is primarily attributed to the ²E→⁴A₂ transition of Mn⁴⁺. Optimal luminescent performance is achieved at a Mn⁴⁺ doping concentration of 0.4%， with concentration quenching mechanisms governed by electric dipole-dipole interactions. The temperature-dependent emission spectra （298~498 K） reveal a thermal activation energy of 0.418 eV for the CaLaGaO₄∶0.4%Mn⁴⁺ phosphors. Notably， the emission spectrum exhibits substantial spectral overlap with plant photoreceptor absorption bands， demonstrating overlap degrees of 23.8% and 51.2% with phytochrome P_R and P_FR， respectively. These results demonstrate that CaLaGaO₄∶Mn⁴⁺ phosphors can be used as far-red emitting pc-LEDs for plant growth lighting.

Investigation on Performance and Mechanism of the Falling Film-Type Plasma-Fenton Synergistic System in Treatment of KN-R Wastewater

SHI Weiye, LIU Sihan, ZHAO Shuchang, WANG Shuai, WANG Zhongbao, HUO Chunqing

2025, 54(8):  1478-1490.  doi:10.16553/j.cnki.issn1000-985x.2025.0037

Asbtract ( 66 )   HTML ( 2)   PDF (5619KB) ( 13 )  

Figures and Tables | References | Related Articles | Metrics

With the development of industry， the treatment of printing and dyeing wastewater has become an important issue in environmental protection. As a typical dye in printing and dyeing wastewater， the degradation efficiency of reactive brilliant blue KN-R （RBB KN-R） directly affects the quality of wastewater treatment and environmental safety. Aiming at the problem of treating RBB KN-R printing and dyeing wastewater， this study designed a falling film dielectric barrier discharge （DBD） plasma reactor. The experimental results show that this device can effectively remove 84.30% of RBB KN-R within 25 min. Further combination of DBD plasma with the Fenton reaction significantly improves the degradation efficiency and mineralization rate of the dye. The study also analyzes the key reactive substances and degradation pathways during the degradation process， clarifies the synergistic mechanism between DBD plasma and the Fenton reaction. Moreover， this system causes less secondary pollution during the treatment process and is environmentally friendly. These findings provide theoretical support and practical guidance for the application of low-temperature plasma technology in the treatment of industrial wastewater.