Table of Content

20 September 2025, Volume 54 Issue 9

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Reviews

Research Progress on Design and Preparation Methods of Organic Cocrystals

WU Bingbing, ZHANG Xi, XIE Fang

2025, 54(9):  1491-1500.  doi:10.16553/j.cnki.issn1000-985x.2025.0084

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Organic cocrystals are a novel class of functional materials formed by the synergistic assembly of two or more organic molecules through non-covalent interactions. By strategically modulating the molecular composition and assembly patterns of donor （D） and acceptor （A） components， these materials transcend the performance limitations of single-component systems， exhibiting diverse stacking modes， abundant intermolecular interactions and versatile functional compositions. Their physicochemical properties can be tailored to meet specific requirements while demonstrating novel characteristics. With groundbreaking applications in optoelectronic materials and pharmaceutical formulations， the preparation methods of organic cocrystals have emerged as a central challenge in materials research. The key objective of cocrystal synthesis lies in the rational design and selection of D/A components to achieve desired morphologies， dimensions， and functionalities. This article summarizes the preparation methods for organic cocrystals， beginning with an introduction to their structural features and design principles， following by an overview of their unique properties. A detailed discussion of synthesis techniques is subsequently presented， concluding with perspectives on future development prospects in this field.

Research Articles

Inclusion Defects in Ca（BO₂）₂ Crystals Grown by Czochralski Method

LI Shifeng, YANG Jinfeng, HUANG Yunqi, ZHANG Bo, LIU Ziqi, SUN Jun, PAN Shilie

2025, 54(9):  1501-1508.  doi:10.16553/j.cnki.issn1000-985x.2025.0072

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Calcium metaborate （Ca（BO₂）₂） crystal is a kind of deep ultraviolet birefringent crystal with great development potential and broad application prospect because of its short ultraviolet transmission cutoff， high ultraviolet transmittance and large birefringence index. However， inclusion defects easily occur during the process of crystal growth， which seriously impact the application of crystals. In this study， Ca（BO₂）₂ crystals were grown using the Czochralski method， and test samples were prepared. The morphology， size， distribution， and composition of the inclusions were investigated using a polarizing microscope， scanning electron microscopy， and Raman spectroscopy. The formation mechanism of the inclusions was analyzed in conjunction with the crystal growth process， and strategies for eliminating inclusions were explored. The result of research shows that the inclusions in Ca（BO₂）₂ crystals are gaseous in nature， originating from gas molecules dissolved in the melt， and appear in the form of “spherical” “linear” and “tadpole-like” shapes. The formation of these inclusions is determined by the interplay between the crystal growth rate and the gas bubble diffusion rate. The inclusions can be completely eliminated by overheating the melt， increasing the temperature gradient at the growth interface， reducing the growth rate， and increasing the crystal growth rotation speed.

Impacts of Hot Wall CVD Process Conditions on Thickness Uniformity of 8-Inch SiC Epitaxial Layer

LU Runlin, ZHENG Lili, ZHANG Hui, WANG Rensong, HU Dongli

2025, 54(9):  1509-1524.  doi:10.16553/j.cnki.issn1000-985x.2025.0066

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A mathematical model considering substrate rotation， Si-C-Cl-H system reaction mechanism and multi-physical heat and mass transport process were established for a typical 8-inch hot-wall horizontal SiC epitaxial growth system， and it was used for three-dimensional numerical simulation research. In particular， the effects of different substrate surface average temperature， inlet flow rate， and inlet Si/H₂ ratio on the growth rate and thickness uniformity of epitaxial layer were studied. The results show that the substrate rotation improves the uniformity of temperature distribution on the substrate surface， and the instantaneous growth rate of SiC is mainly affected by the concentration of growth components near the surface. The thickness uniformity of epitaxial layer is mainly affected by the distribution of the instantaneous growth rate of SiC along the flow direction. The instantaneous growth rate of leading edge and trailing edge of substrate must compensate each other to improve the thickness uniformity. Increasing the average temperature of substrate surface， reducing the inlet flow rate and decreasing the Si/H₂ ratio of the inlet gas all lead to change of distribution of the instantaneous growth rate along the flow direction from concave to convex， and the distribution of the actual growth rate on substrate surface gradually changes from the edge low center high to the edge high center low. The inlet flow rate has the greatest influence on the instantaneous growth rate distribution in the parameter range investigated.

Control of Oxygen Content During the Growth of Single Crystal Silicon by Czochralski Method

LI Jiancheng, ZHONG Zeqi, WANG Junlei, LI Zaoyang, WEN Yong, WANG Lei, LIU Lijun

2025, 54(9):  1525-1533.  doi:10.16553/j.cnki.issn1000-985x.2025.0028

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Single crystal silicon by Czochralski method is the raw material for preparing N-type high-efficiency solar cells， and its oxygen content is directly related to the efficiency and stability of solar cells. Reducing the oxygen dissolution rate by changing the crucible wall temperature distribution during the growth of single crystal silicon is an important method for oxygen reduction. This paper proposes three structural solutions of the heater to change the temperature distribution of the crucible wall and studies their effects on temperature distribution， melt flow， crystallization interface shape and oxygen impurity transport by numerical simulation. The results show that when the long side heater is used， the crucible wall temperature increases first and then decreases， and its crystallization interface deflection and oxygen content are the highest， when the short side heater scheme and the insulation ring scheme are used， the crucible wall temperature presents a monotonically increasing distribution， and the crystallization interface deflection and oxygen content are lower， which are closely related to the temperature distribution， the melt flow， and the solubility of the oxygen impurities in the crucible wall and transport properties in the different schemes. A complete set of oxygen transport analysis methods is further summarised and proposed： the exact source and transport process of oxygen at the crystallization interface are clarified by mapping the transport path of oxygen in the melt. This method provides a theoretical basis for reducing the oxygen content inside single crystal silicon.

Numerical Simulation for Pipeline Problem of Highly Sb-Doped Czochralski Silicon Single Crystal

LI Xiaochuan, MA Sanbao, ZHOU Fengzi, REN Yongpeng, MA Wuxiang, MEI Haotian

2025, 54(9):  1534-1546.  doi:10.16553/j.cnki.issn1000-985x.2025.0053

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The pipeline problem due to the facet effect often appears in the growth of <111>-oriented highly Sb-doped silicon single crystal， seriously impacting the quality of silicon wafer， which needs to be solved urgently. In this study， several solutions are provided theoretically for pipeline problem of 8 inch （1 inch=2.54 cm） highly Sb-doped silicon single crystal， and then tested through the simulation with CGSim software. The obtained results indicate that the increase of pulling speed （V） and crystal rotation speed （M） accompanied with the decrease of crucible rotation speed （N） is an effective solution to suppress the facet effect. This solution can improve the shape of solid-liquid interface remarkably， enhance temperature gradient and velocity of flow near the solid-liquid interface， and reduce the thermal stress of crystal. The optimal technical parameters are V=0.7 mm/min， M=17 r/min and N=-7 r/min.

Birefringence Enhancement Mechanism and Lattice Engineering Controlling Strategy of YPO₄

HAN Yibo, JI Xu, JING Qun, ZHU Xuankai, AIZIZAIMU·WUBULITAYIER , ZHAO Wenhao, CAO Xinjia

2025, 54(9):  1547-1557.  doi:10.16553/j.cnki.issn1000-985x.2025.0078

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Rare-earth phosphates are recognized as novel ultraviolet/deep-ultraviolet optical materials due to their wide bandgaps and excellent optical properties. In this work， two analogous structures （Ⅰ： ICSD No.24514 and Ⅱ： ICSD No.133671） of yttrium phosphate （YPO₄） crystals were identified through high-throughput screening of the inorganic crystal structure database （ICSD）. First-principles calculations were systematically employed to investigate the electronic structures and optical properties of these compounds. Computational simulations were conducted to verify the feasibility and reliability of regulating bandgap and birefringence in YPO₄ crystals through direct lattice parameter manipulation. The results demonstrate remarkable birefringence modulation under lattice engineering： full-dimensional lattice compression to 70% of the original size induced birefringence changes of 0.052 （phase Ⅰ） and 0.057 （phase Ⅱ） at 1 064 nm wavelength， while uniaxial compression along the c-axis （70% strain） yielded 0.029 （phase Ⅰ） and 0.031 （phase Ⅱ）. Both PO₄ and YO₈ groups were found to contribute significantly to the birefringence of YPO₄. Atomic-level analysis reveals that P and O atoms predominantly determine the birefringence orientation， whereas Y atoms play a crucial role in modulating the birefringence efficiency through lattice distortion. This systematic investigation confirms the effectiveness of lattice engineering in birefringence regulation， providing novel insights for designing advanced optical materials and expanding application scenarios for nonlinear optical crystals.

Growth and Scintillation Properties of Zn Ions Doped γ-CuI Crystals

CHEN Can, HU Yizhe, ZHANG Zhijing, PAN Jianguo, PAN Shangke

2025, 54(9):  1558-1565.  doi:10.16553/j.cnki.issn1000-985x.2025.0048

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In this paper， high purity γ-CuI raw materials were purified using recrystallization and zone melting methods， and γ-CuI single crystals doped with different Zn ion concentrations were grown by Bridgman method. The crystal structure， photoluminescence， X-ray excited optical luminescence， and fluorescence lifetime of the samples were thoroughly investigated. X-ray diffraction and scanning electron microscopy analyses confirm the high purity of the synthesized γ-CuI samples and the successful incorporation of Zn ions into the γ-CuI lattice. The photoluminescence and X-ray excited emission spectra indicate that Zn ion doping enhanced the emissions of free excitons and Cu⁺ vacancies while suppressing deep-level emissions. At a Zn ion doping concentration of 5%， the Cu_0.95I:Zn_0.05 crystal demonstrats a fluorescence lifetime of 0.36 ns， which is significantly better than that of γ-CuI （0.62 ns）.

Growth and Electrical Properties of High-Mobility Boron-Doped Single Crystal Diamond via Microwave Plasma Chemical Vapor Deposition

HU Yushuo, YANG Guojian, CAO Guangyu, LIU Cien, ZHANG Xing, LONG Hao, XU Xiangyu, ZHANG Hongliang

2025, 54(9):  1566-1573.  doi:10.16553/j.cnki.issn1000-985x.2025.0060

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High-crystallinity and high-mobility boron-doped single crystal diamond films are the key to realizing high-voltage and high-power electronic devices. In this study， microwave plasma chemical vapor deposition （MPCVD） technology was employed， combined with a two-step growth method and a low-temperature oxygen-assisted growth strategy， to successfully prepare high-mobility boron-doped single crystal diamond films with extensive electrical property tuning. The films were characterized using X-ray diffraction （XRD）， Hall effect measurements， and X-ray photoelectron spectroscopy （XPS）. XRD analysis reveals an XRD peak full width at half maximum （FWHM） of less than 60″， indicating excellent crystalline quality. Hall effect measurements demonstrats precise control over hole concentrations ranging from 10¹⁴ to 10¹⁷ cm^-3， with a maximum room-temperature hole mobility exceeding 1 400 cm²/（V·s）， reaching the international advanced level. XPS characterization confirms successful boron incorporation and reveals a direct correlation between crystalline perfection and high carrier mobility， identifying high crystalline quality as a key factor for achieving high mobility. This work establishes a robust technological framework for synthesizing high-quality boron-doped diamond films， providing key materials for the development of high-performance diamond devices.

Effect of Low-Temperature Supercritical Fluid Process on Electrical Performance of Degraded Ni/β-Ga₂O₃ Schottky Barrier Diodes

SONG Yushan, CHEN Hao, LI Song, YANG Mingchao, YANG Songquan, YANG Sen, ZHOU Leidang, GENG Li, HAO Yue, OUYANG Xiaoping

2025, 54(9):  1574-1583.  doi:10.16553/j.cnki.issn1000-985x.2025.0065

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Advanced semiconductor processes are the key technology for enhancing the electrical performance of β-Ga₂O₃-based devices and mitigating their degradation issues in service environments. Recent studies have demonstrated that low-temperature supercritical fluid process exhibits remarkable advantages in reducing interface states of semiconductor devices， repairing etching process damage， and improving device stability. In this study， low-temperature supercritical fluid （SCF） treatment was employed on Ni/β-Ga₂O₃ Schottky barrier diodes （SBDs） that has undergone degradation in air environment. The process was carried out at 130 ℃ and 20 MPa in N₂O fluid， and then the mechanism of changes in conductivity and breakdown characteristics of the degraded SBDs before and after SCF treatment were systematically investigated by current-voltage and capacitance-voltage measurements. The results demonstrate that the increase in forward saturation current density of SBDs with SCF treatment is accompanied by bulk traps reduction and series resistance decrease. Schottky barrier height elevation and depletion layer broadening effectively inhibit the electron tunneling， leading to leakage current reduction. Additionally， the study illuminates that interface state density of degraded Ni/β-Ga₂O₃ SBDs is not significantly affected by SCF treatment， and the interface traps with large time constants do not significantly affect the Schottky barrier height. This study provides critical experimental evidence and theoretical support for the application of low-temperature supercritical fluid process in optimizing the performance of β-Ga₂O₃-based devices.

First-Principles Study on the Phase Transition Behavior of KNbO₃ under High Pressure

LENG Haoning, SUN Xiaoxiao, MU Baixu, NING Lina

2025, 54(9):  1584-1592.  doi:10.16553/j.cnki.issn1000-985x.2025.0068

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To gain a comprehensive understanding of the phase transition behavior of perovskite oxide KNbO₃ under high pressure conditions， and provide crucial parameters for the engineering applications of ferroelectric materials under extreme conditions， a first-principles method based on density functional theory was employed in this study. The structural phase transitions， elastic properties， and electronic properties of KNbO₃ under high pressure were systematically investigated at absolute zero （0 K）. The results indicate that the most stable structure of KNbO₃ is the orthorhombic Amm2 structure at zero pressure. The material exhibits ductility and is characterized as a central-force solid. Within the pressure range from 0 GPa to 50 GPa， KNbO₃ undergoes two phase transitions： from the Amm2 structure to the tetragonal P4mm structure under 7.7 GPa， and from the P4mm structure to the trigonal R3mR structure under 10.1 GPa. Both phase transitions are accompanied by volume changes and are classified as first-order phase transitions. Elastic analysis reveals that KNbO₃ transitions from ductility to brittleness during the phase transitions and exhibits significant elastic anisotropy. Band structure analysis shows that the band gap of the Amm2 structure under zero pressure is 2.125 eV， indicating an indirect band gap semiconductor. As pressure increases， the band gap initially decreases and then increases. This study not only enriches the understanding of the phase transition behavior of KNbO₃， but also provides theoretical support for the design and application of new KNbO₃ materials.

Theoretical Investigation of Disclination Defect Interactions in Nanotubes

ZHAI Xiaobo, ZHANG Tantao, HUANG Xueli, ZENG Yu, XIE You

2025, 54(9):  1593-1599.  doi:10.16553/j.cnki.issn1000-985x.2025.0057

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Carbon nanotubes （CNTs） exhibit exceptional physical and chemical properties. The 5/7-dislocation defects are one type of topological defects in carbon-based nanomaterials， significantly influences the mechanical， electrical and thermal properties of CNTs. Therefore， understanding of disclination interaction is significance for the application of CNTs. Analogous to vortex interactions in liquid crystals， the interaction potential between disclinations can be calculated using Green's functions. Furthermore， by considering the coupling of curvature and defect， the defect energy of disclinations in curved system can be obtained. However， due to the cylindrical periodic boundary condition， the Green's function of CNTs obtained by conventional projection is divergent. This work proposes several conformal transformations to resolve the divergence issue. Through comparative evaluation of multiple transformation strategies， a method to seek conformal transformation is proposed. Ultimately， an optimal cylindrical Green's function satisfying periodic， symmetric， continuous and smooth constraints is identified. By then the defect energy of disclinations and the distribution of disclination potential in nanotubes are obtained. The defect energy reveals why positive and negative disclinations tent to exist as disclination pairs or on the both sides of nanotubes. The equal potential surface of defect energy in the nanotube is almost circular near the core of disclination， is spindle shape far away from the disclination， and is near straight line when it is very far. The results provide important theoretical guidance for the applications of CNTs.

Preparation of Bi-Doped Re₃Fe₅O₁₂ Magneto-Optical Films by Lead-Free Liquid-Phase Epitaxy Method

LI Xiang, PANG Jun, WANG Ming, LUO Yi, GONG Rui, ZHAO Jianhua, YU Jie

2025, 54(9):  1600-1606.  doi:10.16553/j.cnki.issn1000-985x.2025.0045

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Bi-doped Re₃Fe₅O₁₂ （RIG） single crystal films with a thickness of 1 140 μm were successfully prepared by a lead-free liquid-phase epitaxy （LPE） method using bismuth oxide as solvent， iron oxide and rare-earth oxides as solute， and gadolinium-gallium-doped garnet （SGGG） wafers as epitaxial substrate. The structure and related properties of the films were studied. The result of single crystal X-ray diffraction analysis shows that the prepared film is of a single crystal garnet-phase structure with high crystallization quality. Scanning electron microscopy observation reveals that the surface of film is smooth and uniform， without any obvious cracks or defects， and it is tightly bonded to the substrate. Infrared spectroscopy tests demonstrate that the transmittance of film is close to 70% in the application bands from 1 310 nm to 1 550 nm. Magnetic measurement results indicate that the film exhibits a typical soft-magnetic material hysteresis loop characteristics and has a relatively small saturation magnetization. Magneto-optical tests in the home-made platform show that the Verdet constants of film are 16 841 and 11 993 rad/（T·m） at wavelengths of 1 310 and 1 550 nm， respectively. This study results indicate that the films prepared by LPE method possess excellent properties， expected to be used in Faraday optical isolator in optical communication.

Properties of Infrared-Visible Compatible Stealth Films Based on ITO/Al/ITO Structures

GU Dong, DONG Ling, YANG Jiwei, LI Haiping, LI Jie, ZHU Guisheng, XU Huarui

2025, 54(9):  1607-1613.  doi:10.16553/j.cnki.issn1000-985x.2025.0041

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Infrared-visible compatible stealth materials have attracted much attention for breaking through the limitation of single-band stealth materials and being able to cope with multi-band reconnaissance technology. In this paper， ITO/Al/ITO composite films with different thicknesses of Al spacer layers were prepared by DC magnetron sputtering. Through the synergistic effect of optical effects such as surface and interface effects and multi-band optical coupling among multiple film layers， a kind of ITO/Al/ITO composite film with high visible light transmission and high infrared reflection is obtained. XRD characterization results show that， the insertion of the Al layer improves the crystallinity of the ITO film， the good crystal structure contributes to the movement of carriers， and the carrier mobility of the composite film is enhanced to 24.2 cm²·V^-1·s^-1 compared with that of the bilayer ITO film， which has a carrier mobility of 11.1 cm²·V^-1·s^-1. The visible light transmittance and infrared light reflectance of the composite films with Al layer sputtering time of 9 and 12 s are both greater than 80%.

Thickness-Dependent Study of Infrared-Visible Compatible Stealth in Transparent Conductive Thin Films

YANG Jiwei, DONG Ling, GU Dong, XU Huarui, ZHAO Yunyun, YANG Tao, LI Haiping, LI Jie, ZHU Guisheng

2025, 54(9):  1614-1621.  doi:10.16553/j.cnki.issn1000-985x.2025.0052

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The indium tin oxide （ITO） transparent conductive thin films were prepared by DC magnetron sputtering. The relationship between film thickness and optoelectronic properties was investigated. Structural modulation of ITO thin films was performed to analyze carrier concentration and mobility. Special emphasis was placed on examining the influence of film thickness on infrared wavelength reflectivity. By setting specific sputtering power， substrate temperature， and atmosphere to control the thickness of ITO thin films， films with a thickness of 100~500 nm were obtained， and the preparation of ITO thin films with preferred （400） orientation， high infrared reflectivity， and high visible transmittance was achieved. The special film thickness constructed constitutes a synergistic carrier concentration and mobility， which mitigates part of the effect of diffuse reflection， and the films exhibit unique interfacial properties and energy states under the condition of a film thickness of 400 nm， and an average visible transmittance of 89.51% is obtained to achieve an average infrared reflectance of 97.37% in a wide spectral band of 2.5~15 μm. And the resulting film quality factor is as high as 815.19×10^-4 Ω^-1， which is significantly better than that of the reported transparent conductive thin film system， solving the problem of visible light and infrared-compatible stealth， and providing a new way of thinking for the preparation of spectrum-compatible optical stealth materials and smart windows.

Effects of Heat Treatment Temperature and Er Doping Amount on Photoelectric Properties of Nickel Oxide Thin Films

YAO Hanyu, CHEN Kai, YI Yuwei, ZHOU Yanqi, LI Shuang, TANG Quntao

2025, 54(9):  1622-1632.  doi:10.16553/j.cnki.issn1000-985x.2025.0069

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As a new type of wide band gap hole transport material， NiO has excellent optical and electrical properties. Er doping NiO thin films were prepared by sol-gel method. The effects of annealing temperature and Er doping concentration on the structure and photoelectric properties of NiO thin films were investigated by changing the annealing temperature and Er doping concentration. The results show that crystallinity and visible light transmittance of NiO thin films increase with the increase of annealing temperature from 300 ℃ to 600 ℃， and the resistivity is the lowest at 500 ℃ annealing temperature. With the increase of Er doping concentration from 2% to 10%， the defects of NiO thin films decrease， the grain size increases， and the upconversion luminescence performance increases first and then decreases. The upconversion and electrical properties are the best when the Er doping concentration is 8%. The 8% Er doping NiO film optimized has the highest upconversion luminescence intensity after annealing at 500 ℃ for 2 h. The lowest resistivity is 177.6 Ω·cm and the highest mobility is 0.48 cm²·V^-1·s^-1. This paper successfully provides some theoretical and experimental basis for improving the photoelectric conversion efficiency of perovskite and silicon-based solar cells from two aspects of spectral conversion and hole transport layer material performance optimization.

Pyridazine Carboxyl Ligand to Construct Copper(Ⅱ) Complex and Its Fluorescence Sensing Performance

SHU Hang, WANG Haitao, NIE Jingyuan, HUANG Ju, BAI Jing, WANG Baoqing

2025, 54(9):  1633-1641.  doi:10.16553/j.cnki.issn1000-985x.2025.0055

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Under solvothermal conditions， two novel Cu（Ⅱ） coordination polymers （abbreviated as complex） were constructed by 1-（3-carboxyphenyl）-5-methyl-4-oxo-1，4-dihydropyridazine-3-carboxylic acid abbreviated as H₂（3-PDCA）， 4，4'-bipyridine （BIPY） ligand and Cu（NO₃）₂·3H₂O： ［Cu₂（H₂O）₃（3-PDCA）₂］·2H₂O （1） and ｛［Cu₂（BIPY）（3-PDCA）₂］·H₂O｝ _n （2）. The environmental hazards of Al₃₊ drive the development of fluorescent probes based on coordination polymers. Single-crystal X-ray diffraction reveals that complex 1 adopts a four-node ring structure， while complex 2 exhibits a six-node rhombic 2D network. Their structural integrity was confirmed by PXRD， FT-IR， and TGA. Solid-state fluorescence studies demonstrate that complex 1 acts as a highly selective sensor for Al₃₊ with a detection limit of 2.11×10^-5 mol·L^-1， surpassing most reported materials. This work highlights the potential of complex 1 as an efficient Al₃₊ fluorescent probe for environmental monitoring.

Synthesis, Crystal Structure, and Fluorescence Sensing Property in Water by a Two-Dimensional Cobalt Metal-Organic Framework

CHEN Wentao, ZHUANG Xingyi, AN Hangyi, LAI Zhongjie, WANG Airong, LUO Yani, SHI Zhongfeng, LI Jiaming

2025, 54(9):  1642-1653.  doi:10.16553/j.cnki.issn1000-985x.2025.0063

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A new two-dimensional cobalt-based metal-organic framework （Co-MOF） with the formula ｛［Co（IPA）（TIB）］·2H₂O｝ _n， was successfully synthesized through solvothermal method using isophthalic acid （H₂IPA） and 1，3，5-tris（1-imidazolyl）benzene （TIB） as mixed ligands， and cobalt nitrate as metal source. Its crystal structure and properties were fully characterized by single-crystal X-ray diffraction （SCXRD）， powder X-ray diffraction （PXRD）， infrared spectroscopy （IR）， thermogravimetric analysis （TGA）， and fluorescence spectroscopy. The SCXRD determination reveals that the Co-MOF crystallizes in the monoclinic system with space group P2₁/c， and with the unit cell parameters of a=0.964 28（7） nm， b=1.282 98（10） nm， and c=1.783 32（14） nm. The asymmetric unit of Co-MOF contains a Co（Ⅱ） ion， a deprotonated IPA^2- anion ligand， a neutral TIB ligand， and two crystalline H₂O molecules. Notably， both IPA^2- and TIB ligands were observed to coordinate two Co²⁺ by a μ₂-η¹：η¹ bridging mode， forming a distorted tetrahedral CoN₂O₂ secondary building unit. These structural units were further interconnected via inversion-related IPA^2- and TIB ligands， resulting in a two-dimensional ladder-type framework. Topologically， the 2D network of Co-MOF can be simplified as a （4，4）-connected sql network with a Schläfli symbol of （4⁴.6²）. Furthermore， the adjacent 2D layers were extended to a three-dimensional supramolecular architecture with strong π-π stacking interactions between the symmetry-related imidazole rings of TIB ligand. The fluorescence investigations indicate that this Co-MOF exhibits high selectivity and sensitivity for detecting three polyoxoanions （Cr₂O₇^2-， CrO₄^2-， and S₂O₈^2-） and Fe³⁺ in aqueous solutions， with the calculated detection limits of 2.007×10^-4， 2.514×10^-4， 8.331×10^-4， and 2.709×10^-4 mol/L， respectively. The Co-MOF has excellent thermal stability and fluorescence sensing performance， which may be accounted for the presence of open metal sites and uncoordinated imidazole groups of TIB ligand. These combined characteristics suggest that the Co-MOF possesses significant potential for environmental pollutant detection applications.

Nano-Fe₂O₃/Bamboo Leaf Carbon Composite Anode Materials for High-Performance Lithium-Ion Batteries

WANG Jun, JIN Yaoyao, HU Zhangtao, ZHENG Yi, ZHANG Han

2025, 54(9):  1654-1662.  doi:10.16553/j.cnki.issn1000-985x.2025.0036

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The transition metal oxide Fe₂O₃， as an anode material for lithium-ion batteries， exhibits advantages such as high theoretical specific capacity （1 007 mAh/g）， abundant reserves， and environmental friendliness. However， in practical applications， its performance is limited by low conductivity and significant volume expansion during cycling. Introducing a carbon matrix and nanostructuring are effective strategies to address these issues. The bamboo leaf carbon offers advantages of low cost and high yield. As a carbon matrix， it enhances the conductivity of the composite and buffers the volume expansion of the anode active material. In this study， bamboo leaves were used as a carbon source to prepare carbon materials. Nano-Fe₂O₃ was synthesized by hydrothermal method， and finally， a solvothermal method was employed to combine bamboo leaf-derived carbon with nano-Fe₂O₃， producing a nano-Fe₂O₃/bamboo leaf carbon composite anode material. Electrochemical tests reveal that the nano-Fe₂O₃/bamboo leaf carbon composite maintains a high specific capacity of 704.6 mAh/g after 203 cycles at a current density of 200 mA/g， while delivering a specific capacity of 472 mAh/g at a higher current density of 500 mA/g. The incorporation of bamboo leaf carbon improves the diffusion kinetics of lithium-ion insertion/extraction in the electrode material， and also increases the contribution of pseudocapacitive behavior to the capacity. This study provides a novel approach for utilizing biomass-derived carbon to enhance the reversible capacity and cycling stability of lithium-ion battery anode materials.