Polarization and Temperature Dependence of Low-Temperature Photoluminescence Spectra in Fe-Doped GaN Crystals

doi:10.16553/j.cnki.issn1000-985x.2025.0043

Abstract

Abstract: This article uses low-temperature photoluminescence spectra to study the polarization luminescence characteristics of Fe-doped GaN crystal non-polar m-plane near band edge DBE 1-LO， DBE_2e 1-LO， DBE 2-LO， DBE_2e 2-LO， DAP. The results show that five peaks on the surface all exhibit polarization anisotropy， and the peak intensity increases with the polarization angle. At low temperatures， the near band edge emission peaks of Fe-doped GaN single crystals are all partially polarized light and exhibit different polarization characteristics. The linear polarization degree of the exciton peak is much greater than that of the phonon companion line， with a linear polarization degree of 35.1% and significant polarization characteristics. Its linear polarization degree is 6.22 and 16.56 times that of the first-order and second-order phonon companion lines， respectively. As the Fe doping concentration increases， the peak positions related to Fe³⁺ all show a blue shift， and the peak positions are not significantly affected by temperature. This study contributes to exploring the luminescence mechanism of Fe-doped GaN crystal and enhancing its application in related polarized optoelectronic devices.

Key words: GaN; photoluminescence; Fe-doping; optical property; polarization characteristic; doping concentration

CLC Number:

O734⁺.2

XIAO Jiexiang, YANG Chaopu, WANG Jianfeng, ZHANG Yumin, YI Juemin, XU Ke. Polarization and Temperature Dependence of Low-Temperature Photoluminescence Spectra in Fe-Doped GaN Crystals[J]. Journal of Synthetic Crystals, 2025, 54(8): 1410-1416.

Figures/Tables 7

Fig.1 Test sample and its structural schematic diagram. （a） GaN wurtzite structure and its main crystal planes and orientations；（b） schematic arrangement diagram of m-plane atoms， with Ga atoms in the hollow and N atoms in the solid；（c） physical picture of m-plane Fe-doped GaN crystal；（d） XRD pattern of m-plane sample

Fig.2 Schematic diagram of a low-temperature photoluminescence spectroscopy testing system in independently built

Fig.3 Measurement results of photoluminescence spectra at 5 K in m-plane GaN single crystal

Fig.4 Photoluminescence spectra of GaN varies with polarization angle

Fig.5 Low-temperature photoluminescence integrated intensity of m-plane GaN varies with polarization angle

Fig.6 Physical images of Fe-doped GaN samples with different doping concentrations

Fig.7 Near infrared variable temperature PL spectra of GaN with different Fe-doped concentrations

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