Numerical Simulation for Pipeline Problem of Highly Sb-Doped Czochralski Silicon Single Crystal

doi:10.16553/j.cnki.issn1000-985x.2025.0053

Abstract

Abstract: The pipeline problem due to the facet effect often appears in the growth of <111>-oriented highly Sb-doped silicon single crystal， seriously impacting the quality of silicon wafer， which needs to be solved urgently. In this study， several solutions are provided theoretically for pipeline problem of 8 inch （1 inch=2.54 cm） highly Sb-doped silicon single crystal， and then tested through the simulation with CGSim software. The obtained results indicate that the increase of pulling speed （V） and crystal rotation speed （M） accompanied with the decrease of crucible rotation speed （N） is an effective solution to suppress the facet effect. This solution can improve the shape of solid-liquid interface remarkably， enhance temperature gradient and velocity of flow near the solid-liquid interface， and reduce the thermal stress of crystal. The optimal technical parameters are V=0.7 mm/min， M=17 r/min and N=-7 r/min.

Key words: highly Sb-doped silicon single crystal; pipeline problem; facet effect; numerical simulation

CLC Number:

LI Xiaochuan, MA Sanbao, ZHOU Fengzi, REN Yongpeng, MA Wuxiang, MEI Haotian. Numerical Simulation for Pipeline Problem of Highly Sb-Doped Czochralski Silicon Single Crystal[J]. Journal of Synthetic Crystals, 2025, 54(9): 1534-1546.

Figures/Tables 16

References 34

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Material	Thermal conductivity/（W·K^-1·m^-1）	Specific heat/（J·K^-1·kg^-1）	Density/（kg·m^-3）	Emissivity
Si （melt）	133	915	3 194-0.370 1T	0.3
Si （crystal）	140.53-0.293T+3.393×10^-4T²-2.048×10^-7T³+5.97×10^-11T⁴-6.655×10^-15T⁵	1 000	2 330	0.901 6-2.620 8×10^-4T
Quartz	4	1 232	2 650	0.85
Graphite	146.888 5-0.176 87T+0.000 127T²-4.699×10^-8T³+6.665×10^-12T⁴	2 019	2 300	0.8
Felt	0.03（473 K）；0.06（673 K）；0.07（873 K）；0.09（1 073 K）；0.12（1 273 K）；0.17（1 473 K）	1 047	200	0.8
Ar	0.01+2.5×10^-5T	521	—	—
Steel	15	—	—	0.45

Material	Thermal conductivity/（W·K^-1·m^-1）	Specific heat/（J·K^-1·kg^-1）	Density/（kg·m^-3）	Emissivity
Si （melt）	133	915	3 194-0.370 1T	0.3
Si （crystal）	140.53-0.293T+3.393×10^-4T²-2.048×10^-7T³+5.97×10^-11T⁴-6.655×10^-15T⁵	1 000	2 330	0.901 6-2.620 8×10^-4T
Quartz	4	1 232	2 650	0.85
Graphite	146.888 5-0.176 87T+0.000 127T²-4.699×10^-8T³+6.665×10^-12T⁴	2 019	2 300	0.8
Felt	0.03（473 K）；0.06（673 K）；0.07（873 K）；0.09（1 073 K）；0.12（1 273 K）；0.17（1 473 K）	1 047	200	0.8
Ar	0.01+2.5×10^-5T	521	—	—
Steel	15	—	—	0.45

Number	Scheme	V/（mm·min^-1）	M/（r·min^-1）	N/（r·min^-1）	F/slm
1	Decreasing V	0.2， 0.3， 0.4	15	-8	60
2	Increasing V	0.7， 0.9， 1.1	15	-8	60
3	Increasing V and F	0.7， 0.9	15	-8	65，70
4	Increasing M， decreasing N	0.5	17， 19， 21	-6， -7	60
5	Increasing V and M， decreasing N	0.7， 0.9， 1.1	17， 19， 21	-6， -7	60

Number	Scheme	V/（mm·min^-1）	M/（r·min^-1）	N/（r·min^-1）	F/slm
1	Decreasing V	0.2， 0.3， 0.4	15	-8	60
2	Increasing V	0.7， 0.9， 1.1	15	-8	60
3	Increasing V and F	0.7， 0.9	15	-8	65，70
4	Increasing M， decreasing N	0.5	17， 19， 21	-6， -7	60
5	Increasing V and M， decreasing N	0.7， 0.9， 1.1	17， 19， 21	-6， -7	60