2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究

doi:10.16553/j.cnki.issn1000-985x.20241120.001

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 197-201.DOI: 10.16553/j.cnki.issn1000-985x.20241120.001

• 晶体生长、掺杂和缺陷 • 上一篇下一篇

2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究

严宇超^1,2, 王琤³, 陆昌程³, 刘莹莹³, 夏宁³, 金竹², 张辉^1,2, 杨德仁^1,2

1.浙江大学材料科学与工程学院,硅及先进半导体全国重点实验室,杭州 310027;
2.浙江大学杭州国际科创中心先进半导体研究院和浙江省宽禁带功率半导体材料与器件重点实验室,杭州 311200;
3.杭州镓仁半导体有限公司,杭州 311200

收稿日期:2024-08-29 发布日期:2025-03-04
通信作者: 张辉,博士,教授。E-mail:msezhanghui@zju.edu.cn；张辉,浙江大学教授、博士生导师。主要开展了氧化镓的晶体生长、掺杂以及缺陷控制研究。目前已在国际著名期刊上发表SCI论文180余篇;被SCI他引10000余次,H因子为60;获授权国家发明专利20余项。承担并主持国家自然科学优秀青年基金、国家自然科学基金面上项目、国家自然科学基金青年项目、“973计划”子课题、“863计划”子课题、国际科技合作重大项目、国家重大专项子课题、浙江省自然科学基金、博士点新教师基金等。入选国家万人计划、青年拔尖人才计划。与国外学者合作参与编写英文专著2本。2013年获国家自然科学二等奖(排名第二)。2008年获浙江省科学技术一等奖1项(排名第三)。2007年获全国百篇优秀博士学位论文提名奖。
作者简介:严宇超(2000—),男,浙江省人,硕士研究生。E-mail:22226053@zju.edu.cn
基金资助:
浙江省“尖兵”“领雁”研发攻关计划(2023C01193);中央高校基本科研业务费(226-2022-00200,226-2022-00250);博士后创新人才支持计划(BX20220264);国家青年拔尖人才支持计划;杭州市领军型创新创业团队引进培育计划(TD2022012)

Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates

YAN Yuchao^{1, 2}, WANG Cheng³, LU Changcheng³, LIU Yingying³, XIA Ning³, JIN Zhu², ZHANG Hui^{1, 2}, YANG Deren^{1, 2}

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China;
3. Hangzhou Garen Semiconductor Company Limited, Hangzhou 311200, China

Received:2024-08-29 Published:2025-03-04

摘要/Abstract

摘要： 本文使用直拉法制备了Fe掺杂的大尺寸β相氧化镓(β-Ga₂O₃)单晶,加工制备了高质量的2英寸(1英寸=2.54 cm)(010)衬底,并对衬底的结晶质量、加工质量与电学性质进行了研究。偏光应力仪下的均匀图像表明该衬底无孪晶、裂纹等宏观缺陷,宏观结晶质量良好。该衬底的(020)面X射线摇摆曲线半峰全宽(FWHM)的最大值为29.7″,表明具有良好的微观结晶质量。该衬底的表面平均粗糙度(Ra)的最大值为0.240 nm,局部厚度偏差(LTV)低于1.769 μm,总厚度偏差(TTV)为5.092 μm,翘曲度(Warp)为3.132 μm,表明具有良好的衬底加工质量。此外,该衬底约7×10¹¹ Ω·cm的高电阻率为微波射频器件的开发提供了基础支撑。

关键词: 氧化镓, 宽禁带半导体, 晶体生长, 直拉法, 单晶衬底, 掺杂

Abstract: In this work, large-size Fe-doped β-Ga₂O₃ single crystals were grown by Czochralski method. High quality 2 inch (1 inch=2.54 cm) (010) substrates were fabricated, and the crystal quality, processing quality and electrical properties of these substrates were studied. The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning, cracks and other macrocopic defects, confirming their good macrocrystalline quality. The full width at half maximum (FWHM) of the X-ray rocking curve of (020) plane for these substrates is less than 29.7″, reflecting good microcrystalline quality. The surface average roughness (Ra) of the substrates is less than 0.240 nm, with a local thickness variation (LTV) less than 1.769 μm, a total thickness variation (TTV) of 5.092 μm, and a warp of 3.132 μm, suggesting superior substrate processing quality. Furthermore, the electrical resistivity of the substrate is ~7×10¹¹ Ω·cm, facilitating the development of the microwave and radio frequency devices.

Key words: Ga₂O₃, wide-bandgap semiconductor, crystal growth, Czochralski method, single crystal substrate, doping

中图分类号:

严宇超, 王琤, 陆昌程, 刘莹莹, 夏宁, 金竹, 张辉, 杨德仁. 2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究[J]. 人工晶体学报, 2025, 54(2): 197-201.

YAN Yuchao, WANG Cheng, LU Changcheng, LIU Yingying, XIA Ning, JIN Zhu, ZHANG Hui, YANG Deren. Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates[J]. Journal of Synthetic Crystals, 2025, 54(2): 197-201.

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2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究

Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates

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2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究

Growth of 2-Inch Fe-Doped β-Ga2O3 Single Crystal with High Resistance and Properties of (010) Substrates

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Growth of 2-Inch Fe-Doped β-Ga₂O₃ Single Crystal with High Resistance and Properties of (010) Substrates