垂直布里奇曼法生长氧化镓单晶及其性能表征

doi:10.16553/j.cnki.issn1000-985x.2024.0301

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (2): 190-196.DOI: 10.16553/j.cnki.issn1000-985x.2024.0301

• 晶体生长、掺杂和缺陷 • 上一篇下一篇

垂直布里奇曼法生长氧化镓单晶及其性能表征

黄东阳¹, 黄浩天¹, 潘明艳², 徐子骞¹, 贾宁², 齐红基^1,2

1.杭州富加镓业科技有限公司,杭州 311421;
2.中国科学院上海光学精密机械研究所,上海 201800

收稿日期:2024-11-29 发布日期:2025-03-04
通信作者: 贾宁,博士,青年人才研究员。E-mail:jianing@siom.ac.cn；贾宁,青年人才研究员,博士生导师,入选国家xxxx引才计划、中国科学院海外高层次人才计划、上海市海外高层次人才计划。主要从事宽禁带半导体氧化镓晶体、激光晶体等研究。截至目前,在Adv Mater、J Am Chem Soc、J Mater Chem A、Cryst Growth Des等期刊发表论文40余篇。齐红基,博士,研究员。E-mail:qhj@siom.ac.cn；齐红基,中国科学院创新促进会优秀会员,上海光学精密机械研究所二级研究员、博士生导师,国家科技部重点研发计划项目负责人,杭州光学精密机械研究所所长,《人工晶体学报》编委。主要从事激光晶体、闪烁晶体及新型半导体氧化镓晶体研究。主持国家及省部级项目20余项,在国际期刊发表论文150余篇。曾获得军队科技进步二等奖、上海市技术发明一等奖等奖项。
作者简介:黄东阳(1993—),男,河南省人,硕士。E-mail:hdysmile@qq.com
基金资助:
国家重点研发计划(2022YFB3605502)

Growth and Properties of β-Ga₂O₃ Single Crystal by Vertical Bridgman Method

HUANG Dongyang¹, HUANG Haotian¹, PAN Mingyan², XU Ziqian¹, JIA Ning², QI Hongji^{1, 2}

1. Fujia Gallium Technology Co., Ltd., Hangzhou 311421, China;
2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Received:2024-11-29 Published:2025-03-04

摘要/Abstract

摘要： 本文采用自主设计的垂直布里奇曼(VB)炉,通过动态模拟与实验深度耦合迭代优化的方法,建立了生长炉模型,通过优化生长炉的温场得到最佳温场,并根据模拟最佳温场对实际温场进行优化改造,成功生长出直径3英寸(1英寸=2.54 cm)的氧化镓(β-Ga₂O₃)单晶。进一步加工得到最大尺寸为直径2.5英寸的(100)面β-Ga₂O₃晶圆,并对β-Ga₂O₃晶体的结晶质量和光学性能进行了表征测试。测试结果表明,β-Ga₂O₃晶体具有较高结晶质量,其紫外截止边为257.5 nm,对应光学带隙为4.78 eV,晶体的劳埃衍射斑点清晰、对称,摇摆曲线半峰全宽(FWHM)最小为39.6″。

关键词: β-Ga₂O₃, 垂直布里奇曼法, 晶体生长, 高结晶质量, 宽禁带半导体

Abstract: Using a self-designed vertical Bridgman (VB) furnace, a growth furnace model was established through dynamic simulation and experimental deep coupling iterative optimization method. The optimal temperature field of the growth furnace was obtained by optimizing the temperature field, and the actual temperature field was optimized and modified based on the simulated optimal temperature field. 3-inch (1 inch=2.54 cm) diameter gallium oxide (β-Ga₂O₃) single crystal was successfully grown in this paper. 2.5 inch (100) plane β-Ga₂O₃ wafers were successfully fabricated from the as-grown crystal. The crystalline quality and optical properties of β-Ga₂O₃ crystal were characterized and tested. The test results indicate that, the β-Ga₂O₃ crystal has high crystalline quality, with cut-off edges of ultraviolet for (100) plane is 257.5 nm, corresponding to an optical bandgap of 4.78 eV. The Laue diffraction spots of the crystal are clear and symmetrical, with a minimum full width at half maximum (FWHM) of the rocking curve at 39.6″.

Key words: β-Ga₂O₃, vertical Bridgman method, crystal growth, high crystalline quality, wide bandgap semiconductor

中图分类号:

O782

黄东阳, 黄浩天, 潘明艳, 徐子骞, 贾宁, 齐红基. 垂直布里奇曼法生长氧化镓单晶及其性能表征[J]. 人工晶体学报, 2025, 54(2): 190-196.

HUANG Dongyang, HUANG Haotian, PAN Mingyan, XU Ziqian, JIA Ning, QI Hongji. Growth and Properties of β-Ga₂O₃ Single Crystal by Vertical Bridgman Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 190-196.

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垂直布里奇曼法生长氧化镓单晶及其性能表征

Growth and Properties of β-Ga₂O₃ Single Crystal by Vertical Bridgman Method

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垂直布里奇曼法生长氧化镓单晶及其性能表征

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Growth and Properties of β-Ga₂O₃ Single Crystal by Vertical Bridgman Method