导模法生长β-Ga2O3晶体流场对称性研究

doi:10.16553/j.cnki.issn1000-985x.2025.0007

人工晶体学报 ›› 2025, Vol. 54 ›› Issue (3): 378-385.DOI: 10.16553/j.cnki.issn1000-985x.2025.0007

• 晶体生长、掺杂和缺陷 • 上一篇下一篇

导模法生长β-Ga₂O₃晶体流场对称性研究

姜博文^1,2, 纪为国^2,3, 张璐^2,3, 范骐鸣^2,3, 潘明艳², 黄浩天⁴, 齐红基²

1.上海理工大学材料与化学学院,上海 200093;
2.中国科学院上海光学精密机械研究所,激光晶体研究中心,上海 201800;
3.中国科学院大学,北京 100049;
4.杭州光学精密机械研究所,杭州 311400

收稿日期:2025-01-08 出版日期:2025-03-15 发布日期:2025-04-03
通信作者: 潘明艳,博士,副研究员。E-mail:pmy@siom.ac.cn; 潘明艳,博士,中国科学院上海光学精密机械研究所副研究员,硕士生导师。《人工晶体学报》青年编委,中国科学院青年创新促进会会员。承担国家自然科学基金、国防科工局军品配套、国家重点研发计划等多个项目,在Chemistry of Materials等国际期刊发表论文40余篇。研究方向为光电功能晶体与超宽禁带半导体材料体系设计与单晶生长。
作者简介:姜博文(2001—),男,河南省人,硕士研究生。E-mail:222203081@st.usst.edu.cn
基金资助:
国家重点研发计划(2022YFB3503900);中国科学院青年创新促进会(2023254)

Flow Field Symmetry of β-Ga₂O₃ Crystal Growth by EFG

JIANG Bowen^1,2, JI Weiguo^2,3, ZHANG Lu^2,3, FAN Qiming^2,3, PAN Mingyan², HUANG Haotian⁴, QI Hongji²

1. School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China;
2. Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
3. University of Chinese Academy of Sciences, Beijing 100049, China;
4. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311400, China

Received:2025-01-08 Online:2025-03-15 Published:2025-04-03

摘要/Abstract

摘要： 导模法生长高质量氧化镓单晶的关键在于放肩过程的稳定性控制,而对称的流场与热场是实现稳定放肩的关键因素之一。本文将数值模拟与实验相结合,通过在保温装置的不同位置分别增设进气管道,对保温腔内气体的对流行为进行调控,从而避免气体涡流对模具上方温场分布的负面影响。研究表明,底部进气显著增强了固液界面附近温场与流场的对称性,并获得了合适的轴向温度梯度40 K/mm,成功实现了晶体生长过程中的对称放肩。本文研究为导模法生长β-Ga₂O₃单晶系统的设计与优化提供依据。

关键词: β-Ga₂O₃, 导模法, 数值模拟, 放肩, 流场, 热场

Abstract: The key to successful growth of high-quality gallium oxide (Ga₂O₃) single crystals by the edge-defined film-fed growth (EFG) method is the stable control of the shoulder, where a symmetrical flow and thermal field is one of the critical factors. This paper combines numerical simulation with experiments, introducing gas intakes at different positions in the insulation device to regulate the convective behavior of the gas within the insulation, thereby avoiding the negative impact of vortices on the thermal field above the mold. The study shows that bottom gas intake significantly enhances the symmetry of the thermal and flow fields near the solid-liquid interface, achieving an appropriate axial temperature gradient of 40 K/mm, and successfully realizing symmetrical shoulder during the crystal growth process. This achievement provides a foundation for the design and optimization of the EFG system for β-Ga₂O₃ single crystal growth.

Key words: β-Ga₂O₃, EFG, numerical simulation, shoulder, flow field, thermal field

中图分类号:

姜博文, 纪为国, 张璐, 范骐鸣, 潘明艳, 黄浩天, 齐红基. 导模法生长β-Ga₂O₃晶体流场对称性研究[J]. 人工晶体学报, 2025, 54(3): 378-385.

JIANG Bowen, JI Weiguo, ZHANG Lu, FAN Qiming, PAN Mingyan, HUANG Haotian, QI Hongji. Flow Field Symmetry of β-Ga₂O₃ Crystal Growth by EFG[J]. Journal of Synthetic Crystals, 2025, 54(3): 378-385.

参考文献

[1] FUJITA S. Wide-bandgap semiconductor materials: for their full bloom[J]. Japanese Journal of Applied Physics, 2015, 54(3): 030101.
[2] 王新月, 张胜男, 霍晓青, 等. 超宽禁带半导体β-Ga₂O₃相关研究进展[J]. 人工晶体学报, 2021, 50(11): 1995-2012.
WANG X Y, ZHANG S N, HUO X Q, et al. Research progress of ultra-wide bandgap semiconductor β-Ga₂O₃[J]. Journal of Synthetic Crystals, 2021, 50(11): 1995-2012 (in Chinese).
[3] ZHANG J Y, SHI J L, QI D C, et al. Recent progress on the electronic structure, defect, and doping properties of Ga₂O₃[J]. APL Materials, 2020, 8(2): 020906.
[4] HOSHIKAWA K, OHBA E, KOBAYASHI T, et al. Growth of β-Ga₂O₃ single crystals using vertical Bridgman method in ambient air[J]. Journal of Crystal Growth, 2016, 447: 36-41.
[5] KURAMATA A, KOSHI K, WATANABE S, et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202A2.
[6] AIDA H, NISHIGUCHI K, TAKEDA H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method[J]. Japanese Journal of Applied Physics, 2008, 47(11R): 8506.
[7] OHBA E, KOBAYASHI T, KADO M, et al. Defect characterization of β-Ga₂O₃ single crystals grown by vertical Bridgman method[J]. Japanese Journal of Applied Physics, 2016, 55(12): 1202BF.
[8] XIA N, LIU Y Y, WU D, et al. β-Ga₂O₃ bulk single crystals grown by a casting method[J]. Journal of Alloys and Compounds, 2023, 935: 168036.
[9] GAO X, MA K K, JIN Z, et al. Characteristics of 4-inch (100) oriented Mg-doped β-Ga₂O₃ bulk single crystals grown by a casting method[J]. Journal of Alloys and Compounds, 2024, 987: 174162.
[10] VÍLLORA E G, SHIMAMURA K, YOSHIKAWA Y, et al. Large-size β-Ga₂O₃ single crystals and wafers[J]. Journal of Crystal Growth, 2004, 270(3/4): 420-426.
[11] 张小桃, 谢建军, 夏长泰, 等. 光学浮区法生长掺锡氧化镓单晶及性能研究[J]. 人工晶体学报, 2015, 44(9): 2354-2358.
ZHANG X T, XIE J J, XIA C T, et al. Growth and properties of Sn∶β-Ga₂O₃ single crystal by optical floating zone method[J]. Journal of Synthetic Crystals, 2015, 44(9): 2354-2358 (in Chinese).
[12] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono, di, tri, and tetravalent ions[J]. Journal of Crystal Growth, 2020, 529: 125297.
[13] YOSHIKAWA A, KOCHURIKHIN V, TOMIDA T, et al. Growth of bulk β-Ga₂O₃ crystals from melt without precious metal crucible by pulling from a cold container[J]. Scientific Reports, 2024, 14: 14881.
[14] CHASE A O. Growth of β-Ga₂O₃ by the verneuil technique[J]. Journal of the American Ceramic Society, 1964, 47(9): 470.
[15] 穆文祥. β-Ga₂O₃单晶的生长、加工及性能研究[D]. 济南: 山东大学, 2018.
MU W X. Study on the single crystal, process and properties of β-Ga₂O₃[D]. Jinan: Shandong University, 2018 (in Chinese).
[16] LE C C, LI Z Y, MU W X, et al. 3D numerical design of the thermal field before seeding in an edge-defined film-fed growth system for β-Ga₂O₃ ribbon crystals[J]. Journal of Crystal Growth, 2019, 506: 83-90.
[17] SHIN Y J, LIM S M, JEONG W H, et al. Growth of (100) β-Ga₂O₃ single crystal by controlling the capillary behaviors in EFG system[J]. Japanese Journal of Applied Physics, 2023, 62: SF1022.
[18] JEONG W H, CHOI S M, LIM S M, et al. Influence of active afterheater in the crystal growth of gallium oxide via edge-defined film-fed growing method[J]. Crystals, 2023, 13(11): 1591.
[19] BU Y Z, SAI Q L, QI H J. Stability of interfacial thermal balance in thick β-Ga₂O₃ crystal growth by EFG[J]. Journal of Crystal Growth, 2023, 612: 127194.
[20] GRESHO P M, DERBY J J. A finite element model for induction heating of a metal crucible[J]. Journal of Crystal Growth, 1987, 85(1/2): 40-48.
[21] DADZIS K, EHRIG J, NIEMIETZ K, et al. Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field[J]. Journal of Crystal Growth, 2011, 333(1): 7-15.

导模法生长β-Ga₂O₃晶体流场对称性研究

Flow Field Symmetry of β-Ga₂O₃ Crystal Growth by EFG

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	李琪, 付博, 余博文, 赵昊, 林娜, 贾志泰, 赵显, 陶绪堂. Al/In掺杂与β-Ga₂O₃(100)面孪晶相互作用的第一性原理研究[J]. 人工晶体学报, 2025, 54(3): 371-377.
[2]	沈睿, 郁鑫鑫, 李忠辉, 陈端阳, 赛青林, 谯兵, 周立坤, 董鑫, 齐红基, 陈堂胜. 氧化镓肖特基二极管硼离子注入终端技术研究[J]. 人工晶体学报, 2025, 54(3): 524-529.
[3]	王君岚, 李早阳, 杨垚, 祁冲冲, 刘立军. 导模法生长6英寸氧化镓单晶的结晶界面变形度评估与控制研究[J]. 人工晶体学报, 2025, 54(3): 396-406.
[4]	霍晓青, 张胜男, 周金杰, 王英民, 程红娟, 孙启升. 3~4英寸Fe掺高阻β-Ga₂O₃单晶的制备及其性能研究[J]. 人工晶体学报, 2025, 54(3): 407-413.
[5]	殷长帅, 孟标, 梁康, 崔翰文, 刘胜, 张召富. 采用不同辐射传热模型模拟氧化镓单晶生长热场的对比研究[J]. 人工晶体学报, 2025, 54(3): 386-395.
[6]	陈旭阳, 李昊勃, 秦华垚, 许明耀, 卢寅梅, 何云斌. 新型亚氧化物化学气相传输工艺低成本生长β-Ga₂O₃厚膜[J]. 人工晶体学报, 2025, 54(3): 445-451.
[7]	杨文娟, 卜予哲, 赛青林, 齐红基. 导模法生长氧化镓晶体中的位错缺陷及其分布特点[J]. 人工晶体学报, 2025, 54(3): 414-419.
[8]	查显弧, 万玉喜, 张道华. β相氧化镓p型导电研究进展[J]. 人工晶体学报, 2025, 54(2): 177-189.
[9]	王凯凯, 杜嵩, 徐豪, 龙浩. Ga₂O₃/NiO_x肖特基势垒二极管器件的性能优化研究[J]. 人工晶体学报, 2025, 54(2): 337-347.
[10]	杨晓龙, 唐慧丽, 张超逸, 孙鹏, 黄林, 陈龙, 徐军, 刘波. 光学浮区法生长Bi掺杂β-Ga₂O₃单晶及其光谱性质研究[J]. 人工晶体学报, 2025, 54(2): 202-211.
[11]	黄东阳, 黄浩天, 潘明艳, 徐子骞, 贾宁, 齐红基. 垂直布里奇曼法生长氧化镓单晶及其性能表征[J]. 人工晶体学报, 2025, 54(2): 190-196.
[12]	张子琦, 杨珍妮, 况思良, 魏盛龙, 徐文静, 陈端阳, 齐红基, 张洪良. MBE同质外延生长Sn掺杂β-Ga₂O₃(010)薄膜的电子输运性质研究[J]. 人工晶体学报, 2025, 54(2): 244-254.
[13]	杜桐, 付俊杰, 王紫石, 狄静, 陶春雷, 张赫之, 张琦, 胡锡兵, 梁红伟. β-Ga₂O₃基MSM型日盲紫外光电探测器高温电流输运机制的研究[J]. 人工晶体学报, 2025, 54(2): 319-328.
[14]	董增印, 王英民, 张嵩, 李贺, 孙科伟, 程红娟, 刘超. HVPE法同质外延氧化镓厚膜技术研究[J]. 人工晶体学报, 2025, 54(2): 227-232.
[15]	林海鑫, 高德东, 王珊, 张振忠, 安燕, 张文永. 大尺寸直拉硅单晶生长的多物理场建模与优化[J]. 人工晶体学报, 2025, 54(1): 17-33.