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人工晶体学报 ›› 2026, Vol. 55 ›› Issue (5): 753-762.DOI: 10.16553/j.cnki.issn1000-985x.2025.0245

• 研究论文 • 上一篇    下一篇

有机磷酸酯修饰FA0.8MA0.15Cs0.05Pb(I0.76Br0.24)3钙钛矿太阳能电池及其性能研究

加雪峰(), 叶林峰, 阮妙, 史晨宇, 王智超, 倪玉凤, 郭永刚, 高鹏   

  1. 青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710010
  • 收稿日期:2025-12-05 出版日期:2026-05-20 发布日期:2026-06-09
  • 作者简介:加雪峰(2000—),男,陕西省人,硕士,工程师。E-mail:552398627@qq.com
  • 基金资助:
    钙钛矿电池研发平台建设项目(KY-C-2024-GF06)

Organic Phosphonate-Modified FA0.8MA0.15Cs0.05Pb(I0.76Br0.24)3 Perovskite Solar Cells and Their Performance

JIA Xuefeng(), YE Linfeng, RUAN Miao, SHI Chenyu, WANG Zhichao, NI Yufeng, GUO Yonggang, GAO Peng   

  1. Xi’an Solar Power Branch,Qinghai Huanghe Hydropower Development Co. ,Ltd. ,Xi’an 710010,China
  • Received:2025-12-05 Online:2026-05-20 Published:2026-06-09

摘要: 宽带隙钙钛矿太阳能电池的发展受限于其薄膜中较高的缺陷密度和严重的非辐射复合。本研究提出采用4-甲氧苯基磷酸二乙酯(DM)作为多功能添加剂以解决上述问题。DM分子中的P=O基团可与未配位的Pb2+形成稳定的配位键,有效钝化缺陷;同时,其甲氧基通过给电子效应调节局部电荷分布,协同优化结晶过程。此外,DM分子间的苯环π-π堆叠作用有助于增强薄膜疏水性,从而提升环境稳定性。基于DM修饰的宽带隙钙钛矿太阳能电池实现了22.08%的光电转换效率(PCE)。相比之下,未添加DM的对照器件的PCE仅为18.89%。此外,DM的修饰使器件的开路电压(Voc)从1.082 V提升到1.127 V,短路电流密度(Jsc)从22.33 mA·cm-2增至23.78 mA·cm-2,填充因子(FF)从78.17%提高到82.39%。未封装DM修饰器件在25 ℃、10%~40%相对湿度环境中存放30 d后,仍能保持初始效率的91.2%,显著优于对照器件(85.3%)。这些结果有力印证DM作为功能添加剂在制备高质量钙钛矿薄膜和实现高性能器件方面的巨大潜力,为其后续的实用化推进提供了实验与理论基础。

关键词: 宽带隙钙钛矿电池; 缺陷钝化; 非辐射复合; 添加剂工程; 结晶调控; 稳定性

Abstract: The development of wide-bandgap perovskite solar cells is limited by the high defect density and severe non-radiative recombination within their films. This study proposes the use of 4-methoxyphenyldiethylphosphonate (DM) as a multifunctional additive to mitigate these problems. The P=O group in the DM molecule can form stable coordination bonds with under-coordinated Pb2+, effectively passivating defects. Simultaneously, its methoxy group regulates the local charge distribution through an electron-donating effect, thereby synergistically optimizing the crystallization process. Furthermore, the π-π stacking interactions between the benzene rings of DM molecules enhance the film's hydrophobicity, thereby improving environmental stability. The DM-modified wide-bandgap perovskite solar cell achieve a power conversion efficiency (PCE) of 22.08%. In contrast, the PCE of the control device without DM is only 18.89%. Furthermore, DM modification increase the open-circuit voltage (Voc) from 1.082 V to 1.127 V, the short-circuit current density (Jsc) from 22.33 mA·cm-2 to 23.78 mA·cm-2, and the fill factor (FF) from 78.17% to 82.39%. The unencapsulated DM-modified device retained 91.2% of its initial efficiency after 30 d of storage at 25 ℃ and 10%~40% relative humidity, significantly outperforming the control device(85.3%). These results strongly demonstrate the significant potential of DM as a functional additive for fabricating high-quality perovskite films and realizing high-performance devices, laying both experimental and theoretical foundations for its subsequent practical application.

Key words: wide-bandgap perovskite solar cell; defect passivation; non-radiative recombination; additive engineering; crystallization modulation; stability

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