新型复合终端氧化镓肖特基二极管电学特性仿真研究

doi:10.16553/j.cnki.issn1000-985x.2024.0179

摘要/Abstract

摘要： 作为新一代宽禁带半导体,氧化镓因具有更大的禁带宽度(4.4~4.8 eV)和更高的击穿场强(8 MV/cm),成为制备耐高压、高频、高功率电力电子器件的最佳候选材料。然而,氧化镓肖特基二极管具有终端电场边缘集中效应,导致器件因提前击穿而失效,从而限制了氧化镓的应用。本文通过将可以缓解电场边缘集中效应的高阻区和抑制反向漏电的电子势垒层相结合,设计了一种新型复合终端。仿真结果表明:引入高阻区终端结构的器件电极边缘附近的峰值电场从3.650 MV/cm下降到0.246 MV/cm,可以有效缓解电极电场边缘集中效应。当高阻区Mg离子注入浓度为10¹⁹ cm^-3时,击穿电压从725 V提高到2 115 V,巴利加优值从0.060 GW/cm²增加到0.247 GW/cm²,临界击穿场强从3.650 MV/cm提升到5.500 MV/cm,提高了50.7%;与此同时,电子势垒层AlN的引入使器件反向漏电流大幅降低,反向击穿电压提升至2 690 V。该新型复合终端结构不仅可以有效抑制器件的反向漏电流,同时可以有效提升器件的反向击穿电压。本研究为耐高压、低反向漏电流氧化镓肖特基二极管的研制提供了理论基础。

关键词: 氧化镓, 肖特基二极管, 反向漏电流, 击穿电压, 复合终端

Abstract: As a new generation of wide bandgap semiconductor, gallium oxide has a larger bandgap width(4.4~4.8 eV) and higher breakdown field strength (8 MV/cm), making it an ideal material for fabricating high voltage, high frequency, and high power electronic devices. However, due to the edge concentration effect of the terminal electric field of gallium oxide Schottky diodes, the device fails due to premature breakdown, thus limiting the application of gallium oxide. A new type of composite terminal is designed in this paper, which is formed by combining a high-resistance region that can alleviate the edge concentration effect of the electric field and an electron barrier layer that suppresses reverse leakage. The simulation results show that the peak electric field near the edge of the device electrode that introduces the high-resistance region terminal structure drops from 3.650 MV/cm to 0.246 MV/cm, which can effectively alleviate the edge concentration effect of the electrode electric field. When the Mg ion implantation concentration in the high-resistance region is 10¹⁹ cm^-3, the breakdown voltage increases from 725 V to 2 115 V, the Baliga figure of merit increases from 0.060 GW/cm² to 0.247 GW/cm², and the critical breakdown field strength increases by 50.7% (from 3.650 MV/cm to 5.500 MV/cm); at the same time, the introduction of the electronic barrier layer AlN greatly reduces the reverse leakage current of the device, and the reverse breakdown voltage increases to 2 690 V, which is beneficial to the new composite terminal. The new composite structure can not only effectively suppress the reverse leakage current of the device but also effectively increase the reverse breakdown voltage of the device. This research lays a theoretical foundation for the development of high voltage resistant, low reverse leakage current gallium oxide Schottky diodes.

Key words: β-Ga₂O₃, Schottky diode, reverse leakage current, breakdown voltage, composite terminal

中图分类号:

屈珉敏, 余建刚, 李子唯, 李旺旺, 雷程, 李腾腾, 李丰超, 梁庭, 贾仁需. 新型复合终端氧化镓肖特基二极管电学特性仿真研究[J]. 人工晶体学报, 2025, 54(2): 348-357.

QU Minmin, YU Jiangang, LI Ziwei, LI Wangwang, LEI Cheng, LI Tengteng, LI Fengchao, LIANG Ting, JIA Renxu. Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode[J]. Journal of Synthetic Crystals, 2025, 54(2): 348-357.

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