Ga2O3/NiOx肖特基势垒二极管器件的性能优化研究

doi:10.16553/j.cnki.issn1000-985x.2024.0294

摘要/Abstract

摘要： 由于缺乏p型氧化镓(Ga₂O₃),p型氧化镍(p-NiO_x)通常被用于Ga₂O₃肖特基势垒二极管(SBD)中,这类二极管一般采用结终端延伸(JTE)或异质结势垒肖特基(HJBS)结构。然而,NiO_x对器件性能的影响尚未被充分研究。在本研究中,通过Sentaurus TCAD对JTE和HJBS结构中的NiO_x影响进行了研究,并提出了一种结合NiO_x/Ga₂O₃ HJBS和NiO_x JTE的新型Ga₂O₃肖特基二极管。在JTE结构中,击穿电压(BV)与NiO_x掺杂浓度呈正相关,与NiO_x倾斜角度呈负相关。在HJBS结构中,BV随NiO_x场环(FR)的宽度和深度增加而提高,但随着FR与阳极边缘之间的间距增加而降低。新型复合器件的参数确定为10°倾斜角和3×10¹⁹ cm^-3掺杂浓度的NiO_x JTE,以及5 μm宽、1.5 μm深和1 μm间距的NiO_x HJBS环。实现了4.52 kV的BV、5.68 mΩ·cm²的比导通电阻(R_on,sp)和3.57 GW/cm²的功率优值(PFOM),相比其他实验报道的数据,BV提升了113%,PFOM提升了132%。本研究为利用NiO_x JTE和HJBS结构的垂直Ga₂O₃ SBD设计提供了一种有效提升BV和PFOM性能的方法。

关键词: β-Ga₂O₃, NiO_x, SBD, 击穿电压, PFOM, JTE, HJBS

Abstract: Due to the absence of p-type gallium oxide (Ga₂O₃), p-type nickel oxide (p-NiO_x) was commonly employed in Ga₂O₃ Schottky barrier diode (SBD), which typically utilized either junction termination extension (JTE) or hetero-junction barrier Schottky (HJBS) structure. However, the influence of the NiO_x on device performance has been insufficiently explored. In this work, the effects of NiO_x in JTE and HJBS were investigated by Sentaurus TCAD. In JTE structure, breakdown voltage (BV) presented positive correlation with NiO_x doping concentration and negative correlation with the NiO_x tilt angle. In HJBS structure, BV increased with the width and depth of the NiO_x field ring (FR), while decreased with the spacing between the FR and the anode edge. The optimal configuration was identified, consisting of 10° tilt angle and doping concentration of 3×10¹⁹ cm^-3 for the NiO_x JTE, as well as NiO_x rings of 5 μm width, 1.5 μm depth, and 1 μm spacing for NiO_x HJBS. This configuration achieved the BV of 4.52 kV, specific on-resistance (R_on,sp) of 5.68 mΩ·cm² and performance figure of merit (PFOM) value of 3.57 GW/cm², representing enhancements of 113% in BV and 132% in PFOM compared to experimental reports. This study contributed a design approach for vertical Ga₂O₃ SBD utilizing NiO_x JTE and HJBS structures, enhancing BV and PFOM in SBD.

Key words: β-Ga₂O₃, NiO_x, SBD, breakdown voltage, PFOM, JTE, HJBS

中图分类号:

TN303
TN313

王凯凯, 杜嵩, 徐豪, 龙浩. Ga₂O₃/NiO_x肖特基势垒二极管器件的性能优化研究[J]. 人工晶体学报, 2025, 54(2): 337-347.

WANG Kaikai, DU Song, XU Hao, LONG Hao. Performance Optimization Study of Ga₂O₃/NiO_x Schottky Barrier Diodes[J]. Journal of Synthetic Crystals, 2025, 54(2): 337-347.

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Ga₂O₃/NiO_x肖特基势垒二极管器件的性能优化研究

Performance Optimization Study of Ga₂O₃/NiO_x Schottky Barrier Diodes

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