Journal of Synthetic Crystals ›› 2025, Vol. 54 ›› Issue (7): 1091-1099.DOI: 10.16553/j.cnki.issn1000-985x.2025.0107
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MA Wenjun(
), ZHANG Guodong(
), SUN Xue, LIU Hongjie, LIU Jiaxin, TAO Xutang
Received:2025-05-20
Online:2025-07-20
Published:2025-07-30
CLC Number:
MA Wenjun, ZHANG Guodong, SUN Xue, LIU Hongjie, LIU Jiaxin, TAO Xutang. Recent Advances in Halide Perovskite Semiconductor Single Crystals for Radiation Detection Applications[J]. Journal of Synthetic Crystals, 2025, 54(7): 1091-1099.
Fig.2 Perovskite crystals grown by solution methods. (a)~(d) Perovskite crystals grown by solution temperature-lowering method[4-6]; (e)~(j) perovskite crystals grown by inverse temperature crystallization[1,13-15]
Fig.3 Large perovskite single crystals growth by improved technologies[16,18-20]. (a) Space confinement crystallization for single crystals with adjustable thickness; (b) temperature and speed controlled antisolvent diffusion crystallization for MAPbBr3 single crystal; (c) steady self-supply solution crystallization for MAPbI3 single crystal; (d) close-to-equilibrium crystallization for FAPbBr3 single crystal
Fig.5 Inorganic perovskite crystals grown by vertical Bridgman method[32,28,36]. (a) Mixed-halide CsPbBr3-n I nperovskite crystals; (b) mixed-halide Cs3Bi2I9-n Br n perovskite crystals; (c) mixed cation Cs1-m Rb m PbBr3 single crystals
Fig.6 Methods of restraining ion migration[37-40]. (a) Detecting novel low dimensional perovskite materials; (b) surface passivation; (c) applying reverse bias; (d) constructing the Schottky junction to form a barrier
| 材料 | 生长方法 | 电极材料与结构 | 载流子迁移率寿命积/(cm2·V-1) | 能量分辨率 |
|---|---|---|---|---|
| MAPbBr2.94Cl0.06 | 溶液法 | Ga-Au结构,保护环电极 | 1.8×10-2 | 6.5%@137Cs |
| MAPbI3 | 溶液法 | Ga/Pb-Au不对称结构 | 0.8×10-3 | 6.8%@57Co |
| FACsPbBr3 | 溶液法 | — | 2.2×10-3 | 2.9%@137Cs |
| FAPbI3 | 溶液法 | — | 1.2×10-1 | 35%@241Am |
| MAPbBr2.85Cl0.15 | 溶液法 | Cr-Cr平面对称结构 | — | 25%@137Cs |
| CsPbCl3 | 熔体法 | Ga-Au不对称结构 | 3.2×10-4 | 16%@57Co |
| CsPbBr3 | 熔体法 | Ga-Au不对称结构 | 1.34×10-3 | 3.8%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au平面结构 | 8×10-3 | 1.4%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au准半球形 | 8×10-3 | 1.6%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au像素电极 | — | 1.8%@137Cs |
| CsPbBr3 | 熔体法 | Au-In不对称结构 | 1.7×10-2 | 2%@137Cs |
| CsPbBr3 | 熔体法 | EGaIn-In保护环电极 | — | 4.8%@57Co |
Table 1 Energy resolution of perovskite single crystals in γ-ray detection
| 材料 | 生长方法 | 电极材料与结构 | 载流子迁移率寿命积/(cm2·V-1) | 能量分辨率 |
|---|---|---|---|---|
| MAPbBr2.94Cl0.06 | 溶液法 | Ga-Au结构,保护环电极 | 1.8×10-2 | 6.5%@137Cs |
| MAPbI3 | 溶液法 | Ga/Pb-Au不对称结构 | 0.8×10-3 | 6.8%@57Co |
| FACsPbBr3 | 溶液法 | — | 2.2×10-3 | 2.9%@137Cs |
| FAPbI3 | 溶液法 | — | 1.2×10-1 | 35%@241Am |
| MAPbBr2.85Cl0.15 | 溶液法 | Cr-Cr平面对称结构 | — | 25%@137Cs |
| CsPbCl3 | 熔体法 | Ga-Au不对称结构 | 3.2×10-4 | 16%@57Co |
| CsPbBr3 | 熔体法 | Ga-Au不对称结构 | 1.34×10-3 | 3.8%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au平面结构 | 8×10-3 | 1.4%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au准半球形 | 8×10-3 | 1.6%@137Cs |
| CsPbBr3 | 熔体法 | Au-Au像素电极 | — | 1.8%@137Cs |
| CsPbBr3 | 熔体法 | Au-In不对称结构 | 1.7×10-2 | 2%@137Cs |
| CsPbBr3 | 熔体法 | EGaIn-In保护环电极 | — | 4.8%@57Co |
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